R. Muralidharan
YOU?
Author Swipe
View article: AI Driven Acoustic Insights for Enhanced Lung Health Diagnostics
AI Driven Acoustic Insights for Enhanced Lung Health Diagnostics Open
Lung conditions such as asthma, pneumonia, and Chronic Obstructive Pulmonary Disease (COPD) tend to go undetected in early stages, resulting in late treatment and recovery. This project aims to create an AI-based digital stethoscope system…
View article: 8 W at 10 GHz in AlGaN/GaN High Electron Mobility Transistors on Silicon Without Any Carbon or Iron Doping
8 W at 10 GHz in AlGaN/GaN High Electron Mobility Transistors on Silicon Without Any Carbon or Iron Doping Open
X‐band power performance in AlGaN/GaN high electron mobility transistors (HEMTs) on silicon without intentional carbon (C) or iron (Fe) doping anywhere in the stack is reported. A reverse polarization‐graded AlGaN buffer depletes backgroun…
View article: STOCHASTIC CALCULUS AMONG CUSTOMER SATISFACTION ON E BANKING SERVICES OF STATE BANK OF INDIA WITH SPECIAL REFERENCE TO KRISHNAGIRI, TAMILNADU
STOCHASTIC CALCULUS AMONG CUSTOMER SATISFACTION ON E BANKING SERVICES OF STATE BANK OF INDIA WITH SPECIAL REFERENCE TO KRISHNAGIRI, TAMILNADU Open
In the latest model, the cash-related attempt is the open cycle, if all else fails, change. The advantaged data time grants higher checking and achievement of commitments, more than one vehicle channel for changing the battles of clients, …
View article: Study of optical float-zone grown gallium oxide Schottky barrier diode
Study of optical float-zone grown gallium oxide Schottky barrier diode Open
based lateral Schottky barrier diodes are fabricated using Ni/Au as Schottky contact and Ti/Au as Ohmic contact. The Sn-doped sample is grown by the optical float-zone technique. The effect of trenches, which are used for mesa i…
View article: Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD
Investigation of Optical functions, sub-bandgap transitions, and Urbach tail in the absorption spectra of Ga2O3 thin films deposited using mist-CVD Open
View article: Laser Etch Enabled Active Embedded Microfluidic Cooling in $β$-Ga$_2$O$_3$
Laser Etch Enabled Active Embedded Microfluidic Cooling in $β$-Ga$_2$O$_3$ Open
We demonstrate active embedded microfluidic cooling in $β$-Ga$_2$O$_3$. We employ a cost-effective infra-red laser etch setup to achieve controlled etching of micro-channels in 500 um thick $β$-Ga$_2$O$_3$ substrate. The micro-channels are…
View article: preface
preface Open
SectionSignature Conference (IBSSC-2022), is an international conference organized by IEEE Bombay Section and SVKM's NMIMS MPSTME, Mumbai, India.This flagship event will serve as a forum for disseminating the most recent advances in AI, Da…
View article: Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon
Performance Comparison of Au-Based and Au-Free AlGaN/GaN HEMT on Silicon Open
We report on the electrical performance comparison of Au-based and Au-free AlGaN/GaN high electron mobility transistors (HEMTs) on silicon (Si). The chemical composition of both types of contacts, i.e., Ti/Al/Ti/W (Au-free) and Ti/Al/Ni/Au…
View article: Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range
Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range Open
The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two‐dimensional electron gas‐based Hall sensors on Si substrates can have the advant…
View article: Analyzing ELearning platform reviews using Sentimental Evaluation with SVM Classifier
Analyzing ELearning platform reviews using Sentimental Evaluation with SVM Classifier Open
In today’s scenario, the participation of eLearning courses is rapidly increasing among users, especially during post-pandemic situation. Due to a hike in the need of eLearning, there is a sharp increase in emerging of online courses. Not …
View article: An artificial synaptic transistor using an α-In<sub>2</sub>Se<sub>3</sub> van der Waals ferroelectric channel for pattern recognition
An artificial synaptic transistor using an α-In<sub>2</sub>Se<sub>3</sub> van der Waals ferroelectric channel for pattern recognition Open
Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations.
View article: Automated Forest Monitoring Techniques Using Multiple Technologies
Automated Forest Monitoring Techniques Using Multiple Technologies Open
International Journal of Computer Sciences and Engineering (A UGC Approved and indexed with DOI, ICI and Approved, DPI Digital Library) is one of the leading and growing open access, peer-reviewed, monthly, and scientific research journal …
View article: A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors
A performance comparison between \b{eta}-Ga2O3 and GaN High Electron Mobility Transistors Open
In this letter, we report on the quantitative estimates of various metrics of performance for \b{eta}-Ga2O3 based High Electron Mobility Transistor (HEMT) for radio frequency (RF) and power applications and compare them with III-nitride de…
View article: MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector
MBE grown Self-Powered \b{eta}-Ga2O3 MSM Deep-UV Photodetector Open
We demonstrate self-powered \b{eta}-Ga2O3 deep-UV metal-semiconductor-metal (MSM) photodetectors (PD) with 0.5% external quantum efficiency (EQE) at zero bias. 150 nm thick (-201)-oriented epitaxial \b{eta}-Ga2O3-films were grown on c-plan…
View article: Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon
Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon Open
We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON AlGaN/GaN MISHEMTs for GaN device platforms on Si. A conducti…
View article: Evaluation of on-state resistance in gallium nitride based power electronic switches
Evaluation of on-state resistance in gallium nitride based power electronic switches Open
Gallium nitride (GaN) based high-electron-mobility transistor (HEMT) is getting popular in power electronics applications due to its low on-state resistance and superior switching characteristics. The on-state resistance of the switch is a…
View article: Simulation of an Armoured Vehicle for Blast Loading
Simulation of an Armoured Vehicle for Blast Loading Open
Occupant safety in an armoured vehicle is of paramount importance. Most serious threat to armoured vehicles comes in the form of explosion of buried charge or an improvised explosive device. The use of numerical methods in the validation p…
View article: High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector
High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetector Open
In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial β-Ga2O3-based solar blind metal-semiconductor-metal (MSM) photodetectors (PD). The (-201)-oriented β-Ga2O3 thin film was grown using plasma-assisted MBE …
View article: Microstructural and Compositional Characterisation of Electronic Materials
Microstructural and Compositional Characterisation of Electronic Materials Open
Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN, and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanome…