Raik Hoffmann
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View article: Drift-resilient magnetic-tunnel-junction random-number generator via hybrid control strategies
Drift-resilient magnetic-tunnel-junction random-number generator via hybrid control strategies Open
Magnetic Tunnel Junctions (MTJs) have shown great promise as hardware sources for true random number generation (TRNG) due to their intrinsic stochastic switching behavior. However, practical deployment remains challenged by drift in switc…
View article: Gate-controlled superconductivity and quantum interference in 300 mm CMOS-compatible ZrN nanostructures
Gate-controlled superconductivity and quantum interference in 300 mm CMOS-compatible ZrN nanostructures Open
The interplay of alternative materials, large-scale integration technologies, and innovative devices plays a pivotal role on the way to fault-tolerant quantum computing. In this context, gate-controlled superconductivity (GCS) emerges as a…
View article: Embedded Silicon-Germanium-Based Thermoelectric Devices on 300-mm Wafer
Embedded Silicon-Germanium-Based Thermoelectric Devices on 300-mm Wafer Open
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View article: Integration of ferroelectric devices for advanced in-memory computing concepts
Integration of ferroelectric devices for advanced in-memory computing concepts Open
In this work the integration of ferroelectric (FE) devices for advanced in-memory computing applications is demonstrated based on the FeMFET memory cell concept. In contrast to FeFET having the FE layer directly embedded in the gate-stack,…
View article: Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility
Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility Open
Hafnium oxide (HfO 2 )‐based ferroelectric field effect transistors (FeFETs) revolutionize the emerging nonvolatile memory area, especially with the potential to replace flash memories for several applications. In this article, the suitabi…
View article: Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process
Improvement of low-frequency noise behavior with chloridic precursor materials at ALD process Open
This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once wit…
View article: 300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applications
300 mm CMOS-compatible superconducting HfN and ZrN thin films for quantum applications Open
The rising interest in increased manufacturing maturity of quantum processing units is pushing the development of alternative superconducting materials for semiconductor fab process technology. However, these are often facing CMOS process …
View article: Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films
Thermoelectric transport properties of Si, SiGe, and silicide CMOS-compatible thin films Open
Characterization of thermoelectric transport properties for temperature sensing, cooling, and energy harvesting applications is necessary for a reliable device performance in progressively minimized computer chips. In this contribution, we…
View article: FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility Open
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications. In this article, we inv…
View article: FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility
FeFET-Based Content-Addressable Storage Class Memory: Device Variation and High-Temperature Compatibility Open
Hafnium oxide (HfO2)-based ferroelectric field effect transistors (FeFETs) have revolutionized the emerging non-volatile memory area, especially with the potential to replace flash memories for several applications. In this article, we inv…
View article: Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development
Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development Open
While semiconductor-based spin qubits have demonstrated promising fidelities exceeding 99.9%, their coherence time is limited by the presence of charge noise. However, fast process optimization for reduced charge noise becomes challenging …
View article: A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing
A Study on Imprint Behavior of Ferroelectric Hafnium Oxide Caused by High‐Temperature Annealing Open
Hafnium oxide is found to be a favorable material for ferroelectric nonvolatile memory devices. Its compatibility with complementary metal–oxide–semiconductor processes, the relatively low crystallization temperature when zirconium‐doped, …
View article: Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing Applications
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing Applications Open
This article reports an improvement in the performance of the hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization.…
View article: Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films Open
Due to its ferroelectricity, hafnium oxide has attracted a lot of attention for ferroelectric memory devices. Amongst different dopant elements, zirconium is found to be beneficial due to the relatively low crystallization temperature of h…
View article: Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio
Ferroelectric FETs With Separated Capacitor in the Back-End-of-Line: Role of the Capacitance Ratio Open
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View article: Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films
Tuning Hyrbrid Ferroelectric and Antiferroelectric Stacks for Low Power FeFET and FeRAM Applications by Using Laminated HSO and HZO films Open
The properties of hybrid ferroelectric (FE) and antiFE (AFE) films integrated in a single capacitor stack is reported. The stack lamination (4 × 5 nm) or (2 × 10 nm) using an Alumina (Al 2 O 3 ) interlayer, material type (Si‐doped HfO 2 (H…
View article: Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage
Impact of the Ferroelectric Stack Lamination in Si Doped Hafnium Oxide (HSO) and Hafnium Zirconium Oxide (HZO) Based FeFETs: Toward High-Density Multi-Level Cell and Synaptic Storage Open
A multi-level cell (MLC) operation as a 1–3 bit/cell of the FeFET emerging memory is reported by utilizing optimized Si doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based on ferroelectric laminates. An alumina interlayer was…
View article: A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing
A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing Open
The discovery of ferroelectricity in the fluorite structure based hafnium oxide (HfO 2 ) material sparked major efforts for reviving the ferroelectric field effect transistor (FeFET) memory concept. A Novel metal-ferroelectric-metal-ferroe…
View article: BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms
BEoL Reliability, XPS and REELS Study on low-k Dielectrics to understand Breakdown Mechanisms Open
We used electrical characterization as well as surface analytical methods to understand leakage behavior and breakdown mechanisms of three different interlayer dielectrics (ILD) in detail. Leakage current measurements were conducted on Bac…
View article: Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles
Piezoelectric Response of Polycrystalline Silicon‐Doped Hafnium Oxide Thin Films Determined by Rapid Temperature Cycles Open
The in‐plane piezoelectric response of 20 nm thick Si‐doped HfO 2 is examined by exploiting thermal expansion of the substrate upon rapid temperature cycling. The sample is heated locally by a deposited metal film, and the subsequently reg…