Rainer Jany
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View article: Detection and imaging of the oxygen deficiency in single crystalline YBa2Cu3O7−<i>δ</i> thin films using a scanning positron beam
Detection and imaging of the oxygen deficiency in single crystalline YBa2Cu3O7−<i>δ</i> thin films using a scanning positron beam Open
Single crystalline YBa2Cu3O7−δ (YBCO) thin films were grown by pulsed laser deposition in order to probe the oxygen deficiency δ using a mono-energetic positron beam. The sample set covered a large range of δ (0.191 < δ < 0.791) yiel…
View article: Oxide Microelectronics: Monolithically Integrated Circuits from Functional Oxides (Adv. Mater. Interfaces 1/2014)
Oxide Microelectronics: Monolithically Integrated Circuits from Functional Oxides (Adv. Mater. Interfaces 1/2014) Open
The cover displays an optical microscopy image (interference contrast) of a monolithically integrated all-oxide NMOS chip, showing sections of five ring-oscillators. The field effect transistors of these integrated circuits are based on th…
View article: Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces
Locally enhanced conductivity due to the tetragonal domain structure in LaAlO$_{3}$/SrTiO$_{3}$ heterointerfaces Open
The ability to control materials properties through interface engineering is demonstrated by the appearance of conductivity at the interface of certain insulators, most famously the {001} interface of the band insulators LaAlO$_{3}$ and Ti…
View article: Monolithically Integrated Circuits from Functional Oxides
Monolithically Integrated Circuits from Functional Oxides Open
The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have be…
View article: Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO<sub>3</sub>–SrTiO<sub>3</sub> interfaces
Diodes with breakdown voltages enhanced by the metal-insulator transition of LaAlO<sub>3</sub>–SrTiO<sub>3</sub> interfaces Open
Using the metal-insulator transition that takes place as a function of carrier density at the LaAlO3-SrTiO3 interface, oxide diodes have been fabricated with room-temperature breakdown voltages of up to 200 V. With applied voltage, the cap…