Rainer Waser
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View article: Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration
Effect of Programming Schemes on Short-Term Instability in 1T1R Configuration Open
Short-term instability is one of the key challenges for redox-based resistive random-access memory (ReRAM) reaching practical applications in the field of neuromorphic computing. Developing programming schemes that balance resistance fine-…
View article: Automated Endurance Characterization of Phase Change Memory
Automated Endurance Characterization of Phase Change Memory Open
Phase change memory cells are outstanding candidates for processing-in-memory and neuromorphic computing. The high endurance, low cycle-to-cycle variability, and low read noise especially suit many applications, whereas the high cell-to-ce…
View article: Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses
Linear Potentiation in Filamentary Valence Change Mechanism With Sub-100 ps Pulses Open
Redox-based resistive random access memory (ReRAM) has emerged as a promising technology for next-generation non-volatile memory and neuromorphic computing applications. Among the various ReRAM types, valence change mechanism (VCM) based d…
View article: Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces
Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces Open
View article: Effect of programming schemes on short-term instability in 1T1R configuration
Effect of programming schemes on short-term instability in 1T1R configuration Open
View article: Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design
Synaptogen: A Cross-Domain Generative Device Model for Large-Scale Neuromorphic Circuit Design Open
We present a fast generative modeling approach for resistive memories that reproduces the complex statistical properties of real-world devices. By training on extensive measurement data of an integrated 1T1R array (6000 cycles of 512 devic…
View article: Roadmap to Neuromorphic Computing with Emerging Technologies
Roadmap to Neuromorphic Computing with Emerging Technologies Open
The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging techno…
View article: Full factorial analysis of gradual switching in thermally oxidized memristive devices
Full factorial analysis of gradual switching in thermally oxidized memristive devices Open
Memristive devices are promising candidates for synaptic memories in neuromorphic computing systems, but the insufficient reliability of the analog behavior has been a challenge. Lateral oxide scaling with bottom-up technologies such as th…
View article: Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices
Bulk-like Mott-Transition in ultrathin Cr-doped V2O3 films and the influence of its variability on scaled devices Open
The pressure driven Mott-transition in Chromium doped V2O3 films is investigated by direct electrical measurements on polycrystalline films with thicknesses down to 10 nm, and doping concentrations of 2%, 5% and 15%. A change in resistivit…
View article: Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration
Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration Open
The one-transistor-one-resistor (1T1R) structure has been widely used in the context of novel neuromorphic applications.It can effectively control the state variability in redox-based resistive random access memory (ReRAM) and suppress the…
View article: La<sub>0.6</sub>Sr<sub>0.4</sub>CoO<sub>3−δ</sub> Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition
La<sub>0.6</sub>Sr<sub>0.4</sub>CoO<sub>3−δ</sub> Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition Open
Topotactic phase transitions induced by changes in the oxygen vacancy concentration can largely alter the physical properties of complex oxides, including electronic and magnetic phases, while maintaining the structural integrity of the cr…
View article: Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO<sub>x</sub> Thin Films
Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfO<sub>x</sub> Thin Films Open
HfO 2 is one of the most common memristive materials and it is widely accepted that oxygen vacancies are prerequisite to reduce the forming voltage of the respective memristive devices. Here, a series of six oxygen engineered substoichiome…
View article: Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds
Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds Open
This contains X-ray absorption and diffraction data collected at the Swiss Light Source for various vanadium/chromium oxide samples. Supplement to our paper titled: "K-edge XANES characterization of ultra-thin (V1-xCrx)2O3 films and binary…
View article: Space charge governs the kinetics of metal exsolution
Space charge governs the kinetics of metal exsolution Open
View article: Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds
Supplementary data for: K-edge XANES characterization of ultra-thin (V₁₋ₓCrx)₂O₃ films and binary vanadium oxide compounds Open
This contains X-ray absorption and diffraction data collected at the Swiss Light Source for various vanadium/chromium oxide samples. Supplement to our paper titled: "K-edge XANES characterization of ultra-thin (V1-xCrx)2O3 films and binary…
View article: Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices Open
We fabricate a nano-device that laterally confines the switching oxide and filament to 10 nm. Electrical measurements demonstrate lower variability and reduced ionic noise compared to unconfined filaments, which is supported by our 3D simu…
View article: Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces
Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfaces Open
Exsolution reactions enable the synthesis of oxide-supported metal nanoparticles, desir- able as catalysts in green energy conversion technologies. It is crucial to precisely tai- lor the nanoparticle characteristics to tune the catalysts’…
View article: Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V<sub>2</sub>O<sub>3</sub>
Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V<sub>2</sub>O<sub>3</sub> Open
Devices made of amorphous thin films of the prototypical Mott‐insulator chromium‐doped V 2 O 3 show a threshold and negative differential resistance effect after an electroforming step. Here, it is demonstrated that this effect is caused b…
View article: Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array
Experimental Validation of Memristor-Aided Logic Using 1T1R TaOx RRAM Crossbar Array Open
Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memr…
View article: Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>‐Based Memristive Devices
Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al<sub>2</sub>O<sub>3</sub>/TiO<sub>x</sub>‐Based Memristive Devices Open
Memristive devices with valence change mechanism (VCM) show promise for neuromorphic data processing, although emulation of synaptic behavior with analog weight updates remains a challenge. Standard filamentary and area‐dependent resistive…
View article: Ternary Łukasiewicz logic using memristive devices
Ternary Łukasiewicz logic using memristive devices Open
Memristive devices based on the Valence Change Mechanism (VCM) are promising devices for storage class memory, neuromorphic computing and logic-in-memory (LIM) applications. They are suited for such a wide range of applications, due to the…
View article: Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory
Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory Open
Approaching the application of redox‐based resistive switching random access memory (ReRAM), the research focus shifts more and more toward different aspects of reliability. Herein, it is vital to account for the statistics in large memory…
View article: Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device Open
It has been previously proposed that the SET and RESET processes in a unipolar switching metal‐oxide‐metal memristive device can be explained by thermodiffusion only. In order to validate this, time‐dependent finite element method simulati…
View article: Masthead: (Adv. Electron. Mater. 6/2023)
Masthead: (Adv. Electron. Mater. 6/2023) Open
View article: The MoS<sub>2</sub>-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS<sub>2</sub> Band Structure
The MoS<sub>2</sub>-Graphene-Sapphire Heterostructure: Influence of Substrate Properties on the MoS<sub>2</sub> Band Structure Open
Van der Waals MoS2/graphene heterostructures are promising candidates for advanced electronics and optoelectronics beyond graphene. Herein, scanning probe methods and Raman spectroscopy were applied for analysis of the electronic and struc…
View article: Masthead: (Adv. Electron. Mater. 5/2023)
Masthead: (Adv. Electron. Mater. 5/2023) Open
View article: Bit slicing approaches for variability aware ReRAM CIM macros
Bit slicing approaches for variability aware ReRAM CIM macros Open
Computation-in-Memory accelerators based on resistive switching devices represent a promising approach to realize future information processing systems. These architectures promise orders of magnitudes lower energy consumption for certain …
View article: Demonstration of neuromorphic sequence learning on a memristive array
Demonstration of neuromorphic sequence learning on a memristive array Open
Sequence learning and prediction are considered principle computations performed by biological brains. Machine learning algorithms solve this type of task, but they require large amounts of training data and a substantial energy budget. An…
View article: Masthead: (Adv. Electron. Mater. 2/2023)
Masthead: (Adv. Electron. Mater. 2/2023) Open
View article: Space charge governs the kinetics of metal exsolution
Space charge governs the kinetics of metal exsolution Open
Nanostructured composite electrode materials play a major role in the field of catalysis and electrochemistry. Self‐assembly of metallic nanoparticles on oxide supports via metal exsolution relies on the transport of reducible dopants towa…