Govindasamy Rajesh
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View article: Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station
Investigation of directionally solidified InGaSb ternary alloys from Ga and Sb faces of GaSb(111) under prolonged microgravity at the International Space Station Open
InGaSb ternary alloys were grown from GaSb (111)A and B faces (Ga and Sb faces) under microgravity conditions on board the International Space Station by a vertical gradient freezing method. The dissolution process of the Ga and Sb faces o…
View article: Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments
Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments Open
Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga1-x Sb alloy semiconductor.
View article: Viscosity Measurements of Molten In<sub>x</sub>Ga<sub>1-x</sub>Sb toward the Experiment of Semiconductor Crystal Growth on the ISS
Viscosity Measurements of Molten In<sub>x</sub>Ga<sub>1-x</sub>Sb toward the Experiment of Semiconductor Crystal Growth on the ISS Open
本研究では，混晶半導体であるInxGa1-xSb (x =0, 0.2, 0.4, 1.0) 融液の粘度を回転振動法により測定した．粘度は結晶成長の数値計算に必須のパラメータの1つであり，数値計算の精度向上には粘度の組成依存性が必要となる．測定の結果，InxGa1-xSbにおいてもInSbやGaSbと同様に粘度はアレニウスの直線性を示すことが示された．また，InxGa1-xSbの粘度はGaSb，InSbの間の値となった．本研究は，国際宇宙ステーションで行われる混晶半導体結晶…