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View article: SpaceTeamSat1 Preliminary Design Document: System Architecture
SpaceTeamSat1 Preliminary Design Document: System Architecture Open
Preliminary design document (PDD) for the system architecture of the CubeSat mission SpaceTeamSat1 (STS1) of the TU Wien Space Team (TUST). It presents the key components of the mission and describes their basic concept. Moreover, the docu…
View article: SpaceTeamSat1 Preliminary Design Document: System Architecture
SpaceTeamSat1 Preliminary Design Document: System Architecture Open
Preliminary design document for the system architecture of the CubeSat mission SpaceTeamSat1 (STS1) of the TU Wien Space Team. It presents the key components of the mission and describes their basic concept.
View article: SpaceTeamSat1 Preliminary Design Document: System Architecture
SpaceTeamSat1 Preliminary Design Document: System Architecture Open
Preliminary design document (PDD) for the system architecture of the CubeSat mission SpaceTeamSat1 (STS1) of the TU Wien Space Team (TUST). It presents the key components of the mission and describes their basic concept. Moreover, the docu…
View article: SpaceTeamSat1 Preliminary Design Document: System Architecture
SpaceTeamSat1 Preliminary Design Document: System Architecture Open
Preliminary design document for the system architecture of the CubeSat mission SpaceTeamSat1 (STS1) of the TU Wien Space Team. It presents the key components of the mission and describes their basic concept.
View article: Composition Dependent Electrical Transport in Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub>Nanosheets with Monolithic Single‐Elementary Al Contacts
Composition Dependent Electrical Transport in Si<sub>1−<i>x</i></sub>Ge<sub><i>x</i></sub>Nanosheets with Monolithic Single‐Elementary Al Contacts Open
Si 1− x Ge x is a key material in modern complementary metal‐oxide‐semiconductor and bipolar devices. However, despite considerable efforts in metal‐silicide and ‐germanide compound material systems, reliability concerns have so far hinder…
View article: Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures
Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures Open
Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field‐ef…
View article: Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures
Monolithic and Single-Crystalline Aluminum–Silicon Heterostructures Open
Overcoming the difficulty in the precise definition of the metal phase of metal-Si heterostructures is among the key prerequisites to enable reproducible next-generation nanoelectronic, optoelectronic, and quantum devices. Here, we report …
View article: A flexible CubeSat education platform combining software development and hardware engineering
A flexible CubeSat education platform combining software development and hardware engineering Open
While many secondary schools offer courses or extracurricular activities that focus on satellite engineering, e.g. CanSats or the assembly of ground stations, these projects usually stay close to ground. With SpaceTeamSat1, the TU Wien Spa…
View article: Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime
Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime Open
Recent advances in nanoscale optoelectronic Ge devices have exposed their enormous potential for highly sensitive visible and near-infrared CMOS compatible photodetectors. In this respect, Ge nanowires, due to their nanocylinder resonator …
View article: A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors
A Top‐Down Platform Enabling Ge Based Reconfigurable Transistors Open
Conventional field‐effect transistor (FET) concepts are limited to static electrical functions and demand extraordinarily steep and reproducible doping concentration gradients. Reaching the physical limits of scaling, doping‐free reconfigu…
View article: Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts
Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts Open
The ability to stack nanosheet transistors is an important prerequisite for the realization of vertically monolithic 3D integrated circuits enabling higher integration densities of functions and novel circuit topologies that relax miniatur…
View article: Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics
Gate‐Tunable Negative Differential Resistance in Next‐Generation Ge Nanodevices and their Performance Metrics Open
In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. In this work, a quasi‐1D monocrystalline and monolith…
View article: Ge quantum wire memristor
Ge quantum wire memristor Open
Despite being known of for decades, the actual realization of memory devices based on the memristive effect is progressing slowly, due to processing requirements and the need for exotic materials which are not compatible with today’s compl…