Raphaël Dawant
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View article: Towards scalable cryogenic quantum dot biasing using memristor-based DC sources
Towards scalable cryogenic quantum dot biasing using memristor-based DC sources Open
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operati…
View article: CMOS-compatible Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric memory crosspoints fabricated with damascene process
CMOS-compatible Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric memory crosspoints fabricated with damascene process Open
We report the fabrication of Hf 0.5 Zr 0.5 O 2 (HZO) based ferroelectric memory crosspoints using a complementary metal-oxide-semiconductor-compatible damascene process. In this work, we compared 12 and 56 µ m 2 crosspoint devices with the…
View article: Towards scalable cryogenic quantum dot biasing using memristor-based DC sources
Towards scalable cryogenic quantum dot biasing using memristor-based DC sources Open
Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operati…
View article: Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration
Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration Open
In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages in terms of energy efficiency, scalability, and non-volatility [1]. Characterized by their unique resistive…
View article: Towards Scalable Cryogenic Quantum Dot Biasing Using Memristor-Based Dc Sources
Towards Scalable Cryogenic Quantum Dot Biasing Using Memristor-Based Dc Sources Open
View article: Développement de procédés de microfabrication pour l’intégration BEOL de circuits ReRAM sur des puces CMOS
Développement de procédés de microfabrication pour l’intégration BEOL de circuits ReRAM sur des puces CMOS Open
L'intérêt croissant pour les applications d'intelligence artificielle, notamment celles basées sur les réseaux de neurones artificiels (ANN), est bridé par les limitations matérielles des processeurs. Ces limitations sont dues principaleme…
View article: Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming
Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming Open
Exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatur…
View article: Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming
Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming Open
The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temper…
View article: Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars
Hardware-aware Training Techniques for Improving Robustness of Ex-Situ Neural Network Transfer onto Passive TiO2 ReRAM Crossbars Open
Passive resistive random access memory (ReRAM) crossbar arrays, a promising emerging technology used for analog matrix-vector multiplications, are far superior to their active (1T1R) counterparts in terms of the integration density. Howeve…
View article: Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control
Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control Open
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalab…
View article: Multiple material stack grayscale patterning using electron-beam lithography and a single plasma etching step
Multiple material stack grayscale patterning using electron-beam lithography and a single plasma etching step Open
In this paper, we present a novel method to perform grayscale electron-beam lithography on multilayer stacks where the pattern transfer is done in a single plasma etching step. Due to the differences in material etch rates in the stack, th…
View article: Memristor-based cryogenic programmable DC sources for scalable in-situ\n quantum-dot control
Memristor-based cryogenic programmable DC sources for scalable in-situ\n quantum-dot control Open
Current quantum systems based on spin qubits are controlled by classical\nelectronics located outside the cryostat at room temperature. This approach\ncreates a major wiring bottleneck, which is one of the main roadblocks toward\ntruly sca…
View article: Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing
Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing Open
View article: Hybrid cross correlation and line-scan alignment strategy for CMOS chips electron-beam lithography processing
Hybrid cross correlation and line-scan alignment strategy for CMOS chips electron-beam lithography processing Open
In this paper, we show an alignment strategy based on a hybrid strategy using cross correlation and line-scan alignment to address the challenge for CMOS integrated circuit postprocessing using electron-beam lithography. Due to design rule…
View article: Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing
Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing Open
Brain-inspired computing and neuromorphic hardware are promising approaches that offer great potential to overcome limitations faced by current computing paradigms based on traditional von-Neumann architecture. In this regard, interest in …