Rebecca J. Nikolić
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View article: Liquid semiconductor-halogen based electronics
Liquid semiconductor-halogen based electronics Open
According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least o…
View article: Three dimensional vertically structured MISFET/MESFET
Three dimensional vertically structured MISFET/MESFET Open
According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes…
View article: Three dimensional radioisotope battery and methods of making the same
Three dimensional radioisotope battery and methods of making the same Open
According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; an…
View article: Radiation tolerant microstructured three dimensional semiconductor structure
Radiation tolerant microstructured three dimensional semiconductor structure Open
According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dime…
View article: Indirect conversion nuclear battery using transparent scintillator material
Indirect conversion nuclear battery using transparent scintillator material Open
A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator mat…
View article: Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof
Selective surface treatment of thallium bromide (TLBR)-based detectors to improve longevity and/or restore operational capacity thereof Open
In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a meth…
View article: Gallidation assisted impurity doping
Gallidation assisted impurity doping Open
In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inw…
View article: Three-dimensional boron particle loaded thermal neutron detector
Three-dimensional boron particle loaded thermal neutron detector Open
Three-dimensional boron particle loaded thermal neutron detectors utilize neutron sensitive conversion materials in the form of nano-powders and micro-sized particles, as opposed to thin films, suspensions, paraffin, etc. More specifically…
View article: Capacitance reduction for pillar structured devices
Capacitance reduction for pillar structured devices Open
In one embodiment, an apparatus includes: a first layer including a n+ dopant or p+ dopant; an intrinsic layer formed above the first layer, the intrinsic layer including a planar portion and pillars extending above the planar portion, cav…
View article: Reliable electrical contacts for high power photoconductive switches
Reliable electrical contacts for high power photoconductive switches Open
A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximi…
View article: Stress reduction for pillar filled structures
Stress reduction for pillar filled structures Open
According to one embodiment, an apparatus for detecting neutrons includes an array of pillars, wherein each of the pillars comprises a rounded cross sectional shape where the cross section is taken perpendicular to a longitudinal axis of t…
View article: Rapid pulse annealing of CdZnTe detectors for reducing electronic noise
Rapid pulse annealing of CdZnTe detectors for reducing electronic noise Open
A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a dete…
View article: Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4)
Method for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>1.0E4) Open
Methods for manufacturing solid-state thermal neutron detectors with simultaneous high thermal neutron detection efficiency (>50%) and neutron to gamma discrimination (>10.sup.4) are provided. A structure is provided that includes a p+ reg…
View article: Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof
Energy resolution in semiconductor gamma radiation detectors using heterojunctions and methods of use and preparation thereof Open
In one embodiment, a system comprises a semiconductor gamma detector material and a hole blocking layer adjacent the gamma detector material, the hole blocking layer resisting passage of holes therethrough. In another embodiment, a system …
View article: Three dimensional vertically structured electronic devices
Three dimensional vertically structured electronic devices Open
In one embodiment, a method of forming a vertical transistor includes forming a layer comprising a semiconductor material above a substrate, defining three dimensional (3D) structures in the layer, forming a second region in at least one v…
View article: Three dimensional strained semiconductors
Three dimensional strained semiconductors Open
In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain i…
View article: Metal-based passivation-assisted plasma etching of III-v semiconductors
Metal-based passivation-assisted plasma etching of III-v semiconductors Open
According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one …
View article: Beta Radiation Hardness of GYGAG(Ce) Transparent Ceramic Scintillators
Beta Radiation Hardness of GYGAG(Ce) Transparent Ceramic Scintillators Open
GYGAG(Ce) transparent ceramic garnet scintillators were irradiated with electrons from 0.5 to 2 MeV with fluences from 1016e– /cm2 to 1019e– /cm2, corresponding to doses from 0.3 to 310 Gigarad. Absorption spectra were measured before and …
View article: Ultrahigh GaN:SiO<sub>2</sub>etch selectivity by<i>in situ</i>surface modification of SiO<sub>2</sub>in a Cl<sub>2</sub>-Ar plasma
Ultrahigh GaN:SiO<sub>2</sub>etch selectivity by<i>in situ</i>surface modification of SiO<sub>2</sub>in a Cl<sub>2</sub>-Ar plasma Open
The realization of vertical GaN devices requires deep plasma etching and is contingent on high mask selectivity. In this work, we show that SiO2 can be an effective mask material for deep etching GaN with GaN:SiO2 selectivities greater tha…
View article: Hall Effect Characterization of <i>α</i>‐Irradiated p‐Type 4H‐SiC
Hall Effect Characterization of <i>α</i>‐Irradiated p‐Type 4H‐SiC Open
Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped ma…
View article: Design considerations for three-dimensional betavoltaics
Design considerations for three-dimensional betavoltaics Open
Betavoltaic devices are suitable for delivering low-power over periods of years. Typically, their power density is on the order of nano to micro-Watts per cubic centimeter. In this work we evaluate the potential for using high-aspect ratio…
View article: Selenium-iodide: A low melting point eutectic semiconductor
Selenium-iodide: A low melting point eutectic semiconductor Open
Inorganic liquid semiconductors are of interest in harsh radiological environments, flexible electronics, and for direct printing of semiconductor devices. Many elemental and compound liquid semiconductors exist, although the lowest meltin…
View article: Suppression of Rotational Twins in Epitaxial B<sub>12</sub>P<sub>2</sub> on 4H-SiC
Suppression of Rotational Twins in Epitaxial B<sub>12</sub>P<sub>2</sub> on 4H-SiC Open
B12P2 was grown epitaxially on (0001) 4H-SiC using two different substrate miscuts: a standard 4° miscut toward the [$11\\bar{20}$] and a custom miscut 4° toward the [$1\\bar{10}0$]. Epitaxy on substrates miscut to the [$11\\bar{20}$] resu…
View article: Ultradeep electron cyclotron resonance plasma etching of GaN
Ultradeep electron cyclotron resonance plasma etching of GaN Open
Ultradeep (≥5 μm) electron cyclotron resonance plasma etching of GaN micropillars was investigated. Parametric studies on the influence of the applied radio-frequency power, chlorine content in a Cl2/Ar etch plasma, and operating pressure …