Riad Kabouche
YOU?
Author Swipe
View article: Above 70% PAE in Q-band with AlN/GaN HEMTs structures
Above 70% PAE in Q-band with AlN/GaN HEMTs structures Open
International audience
View article: High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications
High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications Open
The aim of this work is to demonstrate high breakdown voltage and low buffer trapping in superlattice GaN-on-Silicon heterostructures for high voltage applications. To this aim, we compared two structures, one based on a step-graded (SG) b…
View article: Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure Open
S.310-312
View article: High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz Open
International audience
View article: Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs Open
International audience
View article: Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures Open
Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing …
View article: Short-term reliability of high performance Q-band AlN/GaN HEMTs
Short-term reliability of high performance Q-band AlN/GaN HEMTs Open
International audience
View article: Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors Open
Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible ch…
View article: Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures
Low On‐Resistance and Low Trapping Effects in 1200 V Superlattice GaN‐on‐Silicon Heterostructures Open
Herein, the development of gallium nitride on silicon (GaN‐on‐Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing …
View article: High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates Open
In this paper, we present the fabrication and Direct Current/high voltage characterizations of AlN-based thin and thick channel AlGaN/GaN heterostructures that are regrown by molecular beam epitaxy on AlN/sapphire. A very high lateral brea…
View article: Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs
Linearity and robustness evaluation of 150-nm AlN/GaN HEMTs Open
International audience
View article: Scaling of AlN/GaN HEMT for millimeter-wave power applications
Scaling of AlN/GaN HEMT for millimeter-wave power applications Open
In this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical char…
View article: AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer
AlGaN/GaN High Electron Mobility Transistors with Ultra -Wide Bandgap AlN buffer Open
International audience
View article: Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects
Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects Open
We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN…
View article: High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation
High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation Open
In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density I D of 1.5 A/mm associated to …
View article: Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V Open
International audience
View article: High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation
High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation Open
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage curren…
View article: High voltage GaN-on-silicon with low-trapping up to 1200 V
High voltage GaN-on-silicon with low-trapping up to 1200 V Open
International audience
View article: Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications
Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications Open
International audience
View article: C-doped AlN/GaN HEMTs for High efficiency mmW applications
C-doped AlN/GaN HEMTs for High efficiency mmW applications Open
International audience
View article: Current status and challenges of GaN millimeter-wave transistors
Current status and challenges of GaN millimeter-wave transistors Open
In this work, we show that a careful architecture of buffer layers should be employed in order to perform high performance millimeter-wave GaN devices. The use of higher bias operation (VDS ≥ 20 V) will be possible while using short gate l…