S. R. Johnson
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View article: Spectroscopic ellipsometry measurement and analysis of the optical constants of InAs/InAsSb and InGaAs/InAsSb superlattices and their bulk constituents
Spectroscopic ellipsometry measurement and analysis of the optical constants of InAs/InAsSb and InGaAs/InAsSb superlattices and their bulk constituents Open
The optical constants of strain-balanced InAs/InAsSb and InGaAs/InAsSb superlattices and their constituents GaAs, GaSb, InAs, InSb, and InAsSb are measured using spectroscopic ellipsometry. An optical constant model is developed that accur…
View article: Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 <i>μ</i>m
Molecular beam epitaxy growth and optoelectronic properties of droplet-free lattice-matched GaInAsSbBi on GaSb with wavelength extension exceeding 5 <i>μ</i>m Open
GaInAsSbBi alloys are grown lattice-matched on GaSb by molecular beam epitaxy demonstrating smooth surface morphologies, >5 μm wavelength photoluminescence emission, and minority carrier lifetimes >1 μs. At a growth temperature of 40…
View article: Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
Demonstration of a 4.32 <b> <i>μ</i> </b>m cutoff InAsSbBi <i>n</i>B<i>n</i> photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing Open
InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of lattice-matched InAsSb at this temperature reflecting a 0.5…
View article: Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates
Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates Open
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011]. The samples are investigated using X-ray d…
View article: Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices Open
Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design…
View article: Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi
Minority carrier lifetime and photoluminescence of mid-wave infrared InAsSbBi Open
Time-resolved photoluminescence measurements are reported for InAsSbBi alloys grown by molecular beam epitaxy with Bi mole fractions ranging from 0 to 0.8%, yielding minority carrier lifetimes on the order of hundreds of nanoseconds. The m…
View article: Temperature Dependence of Atomic Ordering and Composition Modulation in Inassbbi Grown by Molecular Beam Epitaxy on GASB Substrates
Temperature Dependence of Atomic Ordering and Composition Modulation in Inassbbi Grown by Molecular Beam Epitaxy on GASB Substrates Open
View article: Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy
Microstructure and surface morphology of InAsSbBi grown by molecular beam epitaxy Open
The physical and chemical properties of 210 nm thick InAsSbBi layers grown by molecular beam epitaxy at temperatures between 400 and 430 °C on (100) GaSb substrates are investigated using Rutherford backscattering, X-ray diffraction, trans…
View article: Molecular beam epitaxy growth and optical properties of InAsSbBi
Molecular beam epitaxy growth and optical properties of InAsSbBi Open
The molecular beam epitaxy growth and optical properties of the III-V semiconductor alloy InAsSbBi are investigated over a range of growth temperatures and V/III flux ratios. Bulk and quantum well structures grown on the (100) on-axis and …
View article: Examination of the Structural Quality of InAsSbBi Epilayers using Cross Section Transmission Electron Microscopy
Examination of the Structural Quality of InAsSbBi Epilayers using Cross Section Transmission Electron Microscopy Open
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