V. R. Deline
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View article: A Study on the Long-Term Degradation of Crystalline Silicon Solar Cells Metallized with Cu Electroplating
A Study on the Long-Term Degradation of Crystalline Silicon Solar Cells Metallized with Cu Electroplating Open
While using Cu electroplating to metallize silicon cells is of great interest, the long term reliability of such cells have not been well understood. In this paper silicon solar cells metallized with electroplated Cu were thermally stresse…
View article: Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer
Enhanced Grain Growth of Electroplated Copper on Cobalt-Containing Seed Layer Open
Cu films with low impurities were electroplated on pure Cu, CuCo alloy and electrodeposited Co seed layers to study the room temperature grain growth behavior. As-evaporated Cu and CuCo alloy seed layers showed a significant enhancement ef…
View article: Boron, phosphorus, and arsenic diffusion in TiSi2
Boron, phosphorus, and arsenic diffusion in TiSi2 Open
The diffusivities of B, P, and As implanted in TiSi2 are analyzed between 500 and 900 °C by secondary ion mass spectroscopy. It is shown that P and As have high (and almost equal) diffusivities compared with B which appears immobile. This …
View article: Reply to ’’Comment on ’A unified explanation for secondary ion yields’ and ’Mechanism of the SIMS matrix effect’’’
Reply to ’’Comment on ’A unified explanation for secondary ion yields’ and ’Mechanism of the SIMS matrix effect’’’ Open
Comments made in the preceding paper are critically discussed. It is argued that conclusions reached in our earlier papers were conservative and justified within our experimental accuracy. Negative-ion yields under cesium bombardment scale…
View article: High-temperature scanning cw laser-induced diffusion of arsenic and phosphorus in silicon
High-temperature scanning cw laser-induced diffusion of arsenic and phosphorus in silicon Open
The diffusion of arsenic and phosphorus in silicon at temperatures near the melting point has been investigated by using a scanned cw laser. The intrinsic diffusion coefficients of arsenic and phosphorus obtained in this work agree well wi…
View article: Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon
Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon Open
The use of a continuous scanned Kr ion laser as a tool for annealing of boron-implanted silicon is described. Conditions were found that produce high electrical activity and crystallinity of the implanted layer without redistribution of th…