Robert E. Stahlbush
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View article: Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer
Formation Mechanism and Complex Faulting Behavior of a BPD Loop in 180 μm Thick 4H-SiC Epitaxial Layer Open
4H-SiC with 180 μm epilayer was subjected to UV exposure. Stacking fault expanded from basal plane dislocation (BPD) loop generated during growth in the epilayer was observed by UV Photoluminescence Imaging (UVPL) and X-ray Topograph (XRT)…
View article: Mechanism of novel defect multiplication impacting high power 4H-SiC devices
Mechanism of novel defect multiplication impacting high power 4H-SiC devices Open
Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale…
View article: Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs
Investigation of BPD Faulting under Extreme Carrier Injection in Room vs High Temperature Implanted 3.3kV SiC MOSFETs Open
Implantation process for high Al dose p+ contact layers in SiC MOSFETs can generate new basal plane dislocations (BPDs). Such BPD faulting under high carrier injection was investigated in SiC MOSFET layers designed for 3.3kV operation with…
View article: Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations
Investigation of Static Performances of 1.2kV 4H-SiC MOSFETs Fabricated Using All ‘Room Temperature’ Ion Implantations Open
Several different designs of 1.2kV-rated 4H-SiC MOSFETs have been successfully fabricated under various ion implantation conditions. Implantation conditions consisted of different P+ profiles and implantation temperatures of both room temp…
View article: Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability
Optoelectronic and structural characterization of trapezoidal defects in 4H-SiC epilayers and the effect on MOSFET reliability Open
To this day, trapezoidal defects are found in clusters and high counts in wafers representing the industry standard in terms of material quality being produced. This study sheds light on the nature, origin, behavior, and impact of this def…
View article: Stacking Faults Originating from Star-Defects in 4H-SiC
Stacking Faults Originating from Star-Defects in 4H-SiC Open
Intense efforts are currently in progress to study various sources of basal plane dislocations (BPDs) in SiC epitaxial layers. BPDs can generate Shockley-type stacking faults (SSFs) in SiC epitaxial layers, which have been shown to be asso…
View article: Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects
Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects Open
The evolution of wide bandgap semiconductor materials has led to dramatic improvements for electronic applications at high powers and temperatures. However, the propensity of extended defects provides significant challenges for implementin…
View article: High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography
High-resolution dislocation imaging and micro-structural analysis of HVPE-βGa2O3 films using monochromatic synchrotron topography Open
Threading and basal dislocations were observed and their Burgers vectors (b→) were analyzed in 20 µm thick halide vapor phase homoepitaxially grown beta-gallium oxide (β−Ga2O3) films using 15 keV monochromatic synchrotron X-ray topography …