R. M. Fleming
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View article: An Evolution in Design Education: A 10-Year Experiment in Alternative Teaching and Learning in the Anthropocene
An Evolution in Design Education: A 10-Year Experiment in Alternative Teaching and Learning in the Anthropocene Open
This paper will outline a specific ten-year experiment in finding transformative teaching and learning methods for design in the age of the Anthropocene. It will candidly share failures and successes of the experiment and discuss the ramif…
View article: Comparison of Gain Degradation and Deep Level Transient Spectroscopy in pnp Si Bipolar Junction Transistors Irradiated With Different Ion Species
Comparison of Gain Degradation and Deep Level Transient Spectroscopy in pnp Si Bipolar Junction Transistors Irradiated With Different Ion Species Open
Here, we studied the effect of light ion and heavy ion irradiations on pnp Si BJTs. A mismatch in DLTS deep peak amplitude for devices with same final gain but irradiated with different ion species was observed. Also, different ions cause …
View article: Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes
Identification of the primary compensating defect level responsible for determining blocking voltage of vertical GaN power diodes Open
Electrical performance and characterization of deep levels in vertical GaN P-i-N diodes grown on low threading dislocation density (∼104 - 106 cm−2) bulk GaN substrates are investigated. The lightly doped n drift region of these devices is…
View article: Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes
Performance and Breakdown Characteristics of Irradiated Vertical Power GaN P-i-N Diodes Open
Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with p…
View article: Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors
Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors Open
In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applie…
View article: Editorial
Editorial Open
Every article submitted to this Magazine is initially scanned by my Co-Editorin- Chief Ed Cherney, or by me, for interest to the dielectrics and electrical insulation community, good English language usage, and absence of commercial overto…