Robert Karsthof
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View article: The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers
The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers Open
One of the main challenges in realizing 4H–SiC (silicon carbide)-based bipolar devices is the improvement of minority carrier lifetime in as-grown epitaxial layers. Although Z1/2 has been identified as the dominant carrier lifetime limitin…
View article: Origin of enhanced conductivity in low dose ion irradiated oxides
Origin of enhanced conductivity in low dose ion irradiated oxides Open
Significant resistivity variations have previously been observed in oxides subjected to relatively low ion irradiation doses, nominally insufficient to generate the amount of bulk defects needed to explain the phenomena. In an effort to un…
View article: Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations
Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations Open
The carrier lifetime control over 150 μm thick 4H‐SiC epitaxial layers via thermal generation and annihilation of carbon vacancy (V C ) related Z 1/2 lifetime killer sites is reported. The defect developments upon typical SiC processing st…
View article: Light Absorption and Emission by Defects in Doped Nickel Oxide
Light Absorption and Emission by Defects in Doped Nickel Oxide Open
Nickel oxide is a versatile p‐type semiconducting oxide with many applications in optoelectronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent…
View article: Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC
Stability, Evolution and Diffusion of Intrinsic Point Defects in 4H-SiC Open
Silicon carbide (SiC) is a wide band-gap semiconductor of great technological importance, showing promise for application areas ranging from quantum computing and communication to power devices. Vital in both the contexts of power devices …
View article: Light absorption and emission by defects in doped nickel oxide
Light absorption and emission by defects in doped nickel oxide Open
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparen…
View article: Influence of heat treatments in H2 and Ar on the <i>E</i>1 center in <i>β</i>-Ga2O3
Influence of heat treatments in H2 and Ar on the <i>E</i>1 center in <i>β</i>-Ga2O3 Open
The influence of heat treating n-type bulk β-Ga2O3 in hydrogen (H2) and argon (Ar) gases on the presence of the defect level commonly labeled as E1 was studied. Fourier transform-infrared spectroscopy confirms that hydrogen (H) is incorpor…
View article: Formation of carbon interstitial-related defect levels by thermal injection of carbon into <i>n</i>-type 4<i>H</i>-SiC
Formation of carbon interstitial-related defect levels by thermal injection of carbon into <i>n</i>-type 4<i>H</i>-SiC Open
Electrical properties of point defects in 4H-SiC have been studied extensively, but those related to carbon interstitials (Ci) have remained elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related…
View article: Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide
Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide Open
Point defects in semiconductors are promising single-photon emitters (SPEs) for quantum computing, communication, and sensing applications. However, factors such as emission brightness, purity. and indistinguishability are limited by inter…
View article: Identification of LiNi and VNi acceptor levels in doped nickel oxide
Identification of LiNi and VNi acceptor levels in doped nickel oxide Open
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doped NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionally…
View article: Identification of Li$_{\text{Ni}}$ and V$_{\text{Ni}}$ acceptor levels in doped nickel oxide
Identification of Li$_{\text{Ni}}$ and V$_{\text{Ni}}$ acceptor levels in doped nickel oxide Open
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionall…
View article: Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium
Nickel vacancy acceptor in nickel oxide: Doping beyond thermodynamic equilibrium Open
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…
View article: Nickel Oxide–Based Heterostructures with Large Band Offsets
Nickel Oxide–Based Heterostructures with Large Band Offsets Open
The authors present research on the electronic transport in heterostructures based on p‐type nickel oxide (NiO) with the n‐type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in …
View article: Polaronic interacceptor hopping transport in intrinsically doped nickel oxide
Polaronic interacceptor hopping transport in intrinsically doped nickel oxide Open
In this work, we revisit the issue of the nature of electronic transport in\nnickel oxide (NiO) and show that the widely used model of free small polaron\nhopping, initially raised to characterize transport in high-purity samples, is\nnot …