Roger Loo
YOU?
Author Swipe
View article: Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device
Eight-Qubit Operation of a 300 mm SiMOS Foundry-Fabricated Device Open
Silicon spin qubits are a promising candidate for quantum computing, thanks to their high coherence, high controllability and manufacturability. However, the most scalable complementary metal-oxide-semiconductor (CMOS) based implementation…
View article: <i>(Invited)</i> Source/Drain Epitaxy and Contact Silicides for CFET Applications
<i>(Invited)</i> Source/Drain Epitaxy and Contact Silicides for CFET Applications Open
Continuous device scaling has led the microelectronic industry to intensify research efforts towards exploiting 3D devices and architectures. In this context, the advent of nanosheet (NS) devices and their stacking within complementary fie…
View article: Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits
Hybrid Quantum Systems: Coupling Single-Molecule Magnet Qudits with Industrial Silicon Spin Qubits Open
Molecular spin qudits offer an attractive platform for quantum memory, combining long coherence times with rich multi-level spin structures. Terbium bis(phthalocyaninato) (TbPc$_2$) exemplifies such systems, with demonstrated quantum contr…
View article: Effect of Traps in Si/SiGe NPN Selectors for Cross-Point Memory Array Architecture
Effect of Traps in Si/SiGe NPN Selectors for Cross-Point Memory Array Architecture Open
A latch-up bipolar junction transistor (BJT) selector device for memory crossbar architecture was fabricated using p+–Si1xGex as floating base sandwiched between n+-Si layers. The Ge concentration in the SiGe layers has varied between 25%…
View article: Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements
Rapid Autotuning of a SiGe Quantum Dot into the Single-Electron Regime with Machine Learning and RF-Reflectometry FPGA-Based Measurements Open
Spin qubits need to operate within a very precise voltage space around charge state transitions to achieve high-fidelity gates. However, the stability diagrams that allow the identification of the desired charge states are long to acquire.…
View article: Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications
Epitaxial growth of up to 120× {Si0.8Ge0.2/Si} bilayers in view of three dimensional dynamic random access memory applications Open
Epitaxially grown Si/Si1−xGex multi-stacks with ≥100 bilayers (≥200 sublayers) are being considered for three dimensionally vertically stacked dynamic random access memory devices. Because of the lattice mismatch between Si1−xGex and Si, t…
View article: Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode
Design of a High-Speed Waveguide Ge/Si SACM Avalanche Photodiode Open
We report on a waveguide-coupled (WG) vertical Germanium on Silicon (Ge-on-Si) Separate Absorption Charge Multiplication (SACM) Avalanche Photodiode (APD) achieving 3dB-bandwidths of 50 GHz and 30 GHz at an O-band responsivity of 3 A/W and…
View article: Beyond 100 GHz, High Responsivity, Waveguide-Coupled Deeply Recessed Germanium on Silicon Photodiode
Beyond 100 GHz, High Responsivity, Waveguide-Coupled Deeply Recessed Germanium on Silicon Photodiode Open
In this work, we report a waveguide deeply recessed Ge/Si photodiode achieving a 3-dB bandwidth of 106 GHz at -2 V along with a high O-band responsivity value of 0.93 A/W.
View article: 3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation
3D-DRAM Si/SiGe superlattices: inspection strategies and evaluation Open
The growing interest in using Si/SiGe as a foundational material for 3D stackable DRAM and logic devices presents a significant challenge for inspection strategies, given the defect length scales, density and relative positions.1,2 Ensurin…
View article: Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot Open
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spi…
View article: Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium
Industrial 300 mm wafer processed spin qubits in natural silicon/silicon-germanium Open
The realisation of a universal quantum computer will require the operation of many thousands to millions of coherently coupled qubits. The possibility of using existing industrial semiconductor fabrication techniques and infrastructure for…
View article: Addressing degradation and geometry effects to develop consistent global solar induced fluorescence records from GOME-2A and GOME-2B (2007-2023)
Addressing degradation and geometry effects to develop consistent global solar induced fluorescence records from GOME-2A and GOME-2B (2007-2023) Open
Space-based solar-induced fluorescence (SIF) observations provide critical insights into vegetation activity over time. The GOME-2A and GOME-2B instruments offer extensive global SIF data spanning 2007 to 2023. However, calibration issues …
View article: Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices
Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices Open
After a short description of the evolution of metal-oxide-semiconductor device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe multi-la…
View article: 64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform
64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform Open
We report the recent progress of waveguide-coupled O-band GeSi quantum confined stark effect electroabsorption modulators, monolithically integrated in a Si photonics platform on 300 mm Silicon-on-insulator wafers with 220 nm thick Si top …
View article: Industrial 300mm wafer processed spin qubits in natural silicon/silicon-germanium
Industrial 300mm wafer processed spin qubits in natural silicon/silicon-germanium Open
The realisation of an universal quantum computer will require the operation of thousands to millions of qubits. The possibility of using existing industrial semiconductor fabrication techniques and infrastructure for up-scaling and reprodu…
View article: A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations
A 300 mm foundry silicon spin qubit unit cell exceeding 99% fidelity in all operations Open
Fabrication of quantum processors in advanced 300 mm wafer-scale complementary metal-oxide-semiconductor (CMOS) foundries provides a unique scaling pathway towards commercially viable quantum computing with potentially millions of qubits o…
View article: Source/Drain Epitaxy for Nanosheet-Based CFET Devices
Source/Drain Epitaxy for Nanosheet-Based CFET Devices Open
This work reports the progress in source/drain (S/D) epitaxy development for nanosheet-based monolithic complementary field effect transistors (mCFET). S/D processes which were set-up for bulk finFET devices can be easily transferred to mC…
View article: (Keynote) Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices
(Keynote) Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices Open
After a short description of the evolution of metal-oxide-semiconductor (MOS) device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe mu…
View article: Industrial 300$\,$mm wafer processed spin qubits in natural silicon/silicon-germanium
Industrial 300$\,$mm wafer processed spin qubits in natural silicon/silicon-germanium Open
The realisation of an universal quantum computer will require the operation of thousands to millions of qubits. The possibility of using existing industrial semiconductor fabrication techniques and infrastructure for up-scaling and reprodu…
View article: Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks
Texture of Orthorhombic ScSi in Annealed TiN / Sc / Si(:P)(001) Contact Stacks Open
The crystalline texture of orthorhombic ScSi, formed by solid state reaction between 25 nm Sc and Si(:P)(001), is studied using X-ray diffraction pole figures. An epitaxial texture with two different components, having the same ScSi(001) /…
View article: Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices
Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices Open
This study investigates the viability of Si 1− x Ge x :P ( x ≤ 0.3) as a novel source/drain material for n-channel Metal-Oxide-Semiconductor for Gate-All-Around (GAA) transistors, addressing the challenges posed by the evolving semiconduct…
View article: Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy
Interface sharpness in stacked thin film structures: a comparison of soft X-ray reflectometry and transmission electron microscopy Open
Background: A key element of semiconductor fabrication is the precise deposition of thin films. Among other aspects, the quality of interfaces between different materials plays a crucial role for the success of further processing steps. Ai…
View article: Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si<sub>0.5</sub>Ge<sub>0.5</sub>(001)-2 × 1 Surfaces
Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si<sub>0.5</sub>Ge<sub>0.5</sub>(001)-2 × 1 Surfaces Open
sponsorship: G. R. acknowledges the Research Foundation of Flanders (FWO) for granting him a PhD fellowship for strategic basic research (grant number: 1SB3922N). This project has received funding from the ECSEL Joint Undertaking (JU) unde…
View article: Overview of Engineered Germanium Substrate Development for Affordable Large-Volume Multijunction Solar Cells
Overview of Engineered Germanium Substrate Development for Affordable Large-Volume Multijunction Solar Cells Open
International audience
View article: Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures
Soft x-ray reflectometry for the inspection of interlayer roughness in stacked thin film structures Open
A key element of semiconductor fabrication is the precise deposition of thin films. Amongst other aspects, the\nquality of interfaces between different materials plays a crucial role for the success of further process steps. We\nhere prese…
View article: Ge-on-insulator fabrication based on Ge-on-nothing technology
Ge-on-insulator fabrication based on Ge-on-nothing technology Open
Ge-on-Insulator (GOI) is considered to be a necessary structure for novel Ge-based devices. This paper proposes an alternative approach for fabricating GOI based on the Ge-on-Nothing (GeON) template. In this approach, a regular macropore a…
View article: Crystallinity and composition of Sc<sub>1−<i>x</i>(−<i>y</i>)</sub>Si<sub> <i>x</i> </sub>(P<sub> <i>y</i> </sub>) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications
Crystallinity and composition of Sc<sub>1−<i>x</i>(−<i>y</i>)</sub>Si<sub> <i>x</i> </sub>(P<sub> <i>y</i> </sub>) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications Open
Sc-based contacts to Si:P have shown great potential for NMOS devices. However, the promising properties of this material system are not yet fully understood. This work provides new insights into the crystallinity and composition of anneal…