Romain Scaffidi
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View article: Modeling of current-voltage characteristics of high-efficiency kesterite solar cells
Modeling of current-voltage characteristics of high-efficiency kesterite solar cells Open
View article: Benchmarking Inorganic Thin‐Film Photovoltaics Technologies for Indoor Applications
Benchmarking Inorganic Thin‐Film Photovoltaics Technologies for Indoor Applications Open
The growing demand for sustainable power solutions for Internet of Things (IoT) systems, projected to reach billions of units in the near future, highlights the limitations of battery reliance due to maintenance, environmental concerns, an…
View article: Exploring the Synthesis of Cu<sub>2</sub>(Zn,Cd)SnS<sub>4</sub> at High Temperatures as a Route for High‐Efficiency Solar Cells
Exploring the Synthesis of Cu<sub>2</sub>(Zn,Cd)SnS<sub>4</sub> at High Temperatures as a Route for High‐Efficiency Solar Cells Open
The present research explores for the first time the intricate relationship between sulfurization temperature at unusual high temperatures (up to 700°C) and the structural/optoelectronic properties of Cu 2 (Zn,Cd)SnS 4 (CZCTS) thin films, …
View article: Fabrication of bendable and narrow bandgap Cu(In,Ga)(S,Se)2 for tandem photovoltaics
Fabrication of bendable and narrow bandgap Cu(In,Ga)(S,Se)2 for tandem photovoltaics Open
Cu(In,Ga)(S,Se)2 absorbers with a bandgap in the near-infrared region are ideal candidates for a bottom cell in multi-junction solar cell architectures. In flexible and lightweight form factors, such devices could help power many applicati…
View article: Tuning the bandgap without compromising efficiency: Ambient solution processing of Ge-alloyed (Ag,Cu)2Zn(Sn,Ge)(S,Se)4 kesterite thin-film solar cells
Tuning the bandgap without compromising efficiency: Ambient solution processing of Ge-alloyed (Ag,Cu)2Zn(Sn,Ge)(S,Se)4 kesterite thin-film solar cells Open
View article: Li‐Doping and Ag‐Alloying Interplay Shows the Pathway for Kesterite Solar Cells with Efficiency Over 14%
Li‐Doping and Ag‐Alloying Interplay Shows the Pathway for Kesterite Solar Cells with Efficiency Over 14% Open
Kesterite photovoltaic technologies are critical for the deployment of light‐harvesting devices in buildings and products, enabling energy sustainable buildings, and households. The recent improvements in kesterite power conversion efficie…
View article: Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor
Comparative study of the interface passivation properties of LiF and Al2O3 using silicon MIS capacitor Open
Lithium fluoride (LiF) is currently a very popular dielectric material used as a passivation or transport layer in a variety of applications, especially in high-efficiency solar cells. Despite this, its conduction properties and interface …
View article: Tuning the Bandgap Without Compromising Efficiency: Ambient Solution Processing of Ge-Alloyed (Ag,Cu)<sub>2</sub>Zn(Sn,Ge)(S,Se)<sub>4</sub> Kesterite Thin-Film Solar Cells
Tuning the Bandgap Without Compromising Efficiency: Ambient Solution Processing of Ge-Alloyed (Ag,Cu)<sub>2</sub>Zn(Sn,Ge)(S,Se)<sub>4</sub> Kesterite Thin-Film Solar Cells Open
View article: Controlled Li Alloying by Postsynthesis Electrochemical Treatment of Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> Absorbers for Solar Cells
Controlled Li Alloying by Postsynthesis Electrochemical Treatment of Cu<sub>2</sub>ZnSn(S, Se)<sub>4</sub> Absorbers for Solar Cells Open
Li-alloying of Cu2ZnSn(S, Se)4 (CZTSSe) absorbers is widely accepted for its beneficial influence on the performance of CZTSSe-based thin film solar cells. Given the degraded morphology characteristic of absorbers syn…
View article: Controlled Li Alloying by Post-Synthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells
Controlled Li Alloying by Post-Synthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells Open
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View article: Controlled Li Alloying by Post-Synthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells
Controlled Li Alloying by Post-Synthesis Electrochemical Treatment of Cu2ZnSn(S, Se)4 Absorbers for Solar Cells Open
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View article: Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy
Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy Open
View article: Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy
Band gap reduction in highly-strained silicon beams predicted by first-principles theory and validated using photoluminescence spectroscopy Open
A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress appli…
View article: Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)<sub>2</sub> thin-film solar cells
Low-temperature admittance spectroscopy for defect characterization in Cu(In,Ga)(S,Se)<sub>2</sub> thin-film solar cells Open
We present a methodology to use low-temperature admittance measurements for characterizing defects in thin-film Cu(ln,Ga)(S,Se)2 solar cells, which is a major step towards increased performance. We develop the theory behind admittance spec…
View article: Band Gap Reduction in Highly-Strained Silicon Beams Predicted by First-Principles Theory and Validated Using Photoluminescence Spectroscopy
Band Gap Reduction in Highly-Strained Silicon Beams Predicted by First-Principles Theory and Validated Using Photoluminescence Spectroscopy Open
View article: A study of bandgap-graded CZTGSe kesterite thin films for solar cell applications
A study of bandgap-graded CZTGSe kesterite thin films for solar cell applications Open
The sustainable and harmless Cu 2 ZnSn(S,Se) 4 kesterite materials for thin-film photovoltaics are still lacking efficiency, which may be solved by bandgap grading, herein obtained by two-step annealing in H 2 Se gas of metallic precursors.
View article: Ge-alloyed kesterite thin-film solar cells: previous investigations and current status – a comprehensive review
Ge-alloyed kesterite thin-film solar cells: previous investigations and current status – a comprehensive review Open
Ge alloying in kesterite thin films enables to mitigate electronic defect and disorder, enhance morphology as well as realize bandgap grading, all contributing to higher performance of complete solar cells via resolved V oc and fill factor…
View article: Dielectric Front Passivation for Cu(In,Ga)Se<sub>2</sub> Solar Cells: Status and Prospect
Dielectric Front Passivation for Cu(In,Ga)Se<sub>2</sub> Solar Cells: Status and Prospect Open
Cu(In,Ga)Se 2 (CIGSe) solar cells are among the most efficient thin‐film solar cells on lab scale. However, this thin‐film technology has relatively large upscaling losses for commercial technology. To tackle this, paradigm shifts are prop…
View article: Comparative Study of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> for Surface Passivation of Cu(In,Ga)Se<sub>2</sub> Thin Films: An Innovative Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Multistack Design
Comparative Study of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> for Surface Passivation of Cu(In,Ga)Se<sub>2</sub> Thin Films: An Innovative Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Multistack Design Open
In Cu(In,Ga)Se 2 (CIGS) thin‐film solar cells, interface recombination is one of the most important limiting factors with respect to device performance. Herein, metal–insulator–semiconductor samples are used to investigate and compare the …
View article: Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfO<sub>x</sub>
Rear surface passivation of ultra-thin CIGS solar cells using atomic layer deposited HfO<sub>x</sub> Open
In this work, hafnium oxide layer is investigated as rear surface passivation layer for ultra-thin (550 nm) CIGS solar cells. Point contact openings in the passivation layer are realized by spin-coating potassium fluoride prior to absorber…