Explanipedia

Nitrogen: A promising doping strategy for high-performance ovonic threshold switching selectors Open

Rongchuan Gu, Shaojie Yuan, Huan Wang, Qundao Xu, Siqi Tang , et al. · 2024

Structural and electronic characteristics of amorphous Ge8Sb2Te11 Open

Chong Qiao, Yujun Niu, Shengzhao Wang, Rongchuan Gu, Qundao Xu , et al. · 2024

Structure, bonding and electronic characteristics of amorphous Se Open

Chong Qiao, Lanli Chen, Rongchuan Gu, Bin Liu, Shengzhao Wang , et al. · 2024

Se atoms present strong but short-range bonding interactions, leading to amorphous Se forming chain structures.

Revealing the structure and electronic characteristics of Te-rich threshold switching materials for high-density integration Open

Chong Qiao, Rongchuan Gu, Shuangnian Hu, Guoxin Wang, Shengzhao Wang , et al. · 2024

Most Ge-centered tetrahedrons in amorphous GeTe 6 are formed by stable Ge–Te bonds, ensuring the stability of amorphous configurations.

The role of arsenic in the operation of sulfur-based electrical threshold switches Open

Renjie Wu, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun , et al. · 2023

Unveiling the structure and electronic characteristics of amorphous GeS for high performance threshold switching Open

Chong Qiao, Shengzhao Wang, Lanli Chen, Bin Liu, Shouyan Bai , et al. · 2023

Ovonic threshold switching selectors are widely studied owing to the essential application in high density phase-change memory. Amorphous GeS is proposed as a potential candidate for the excellent performance. However, the knowledge of amo…

Tailoring Mid‐Gap States of Chalcogenide Glass by Pressure‐Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials Open

Meng Xu, Qundao Xu, Rongchuan Gu, Songyou Wang, Cai‐Zhuang Wang , et al. · 2023

Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid‐gap states, induced by the disorder and defects in the glass, are the physical me…

The Role of Arsenic in the Operation of Electrical Threshold Switches Open

Renjie Wu, Rongchuan Gu, Tamihiro Gotoh, Zihao Zhao, Yuting Sun , et al. · 2023

Arsenic is one of the most frequently used elements for doping conventional silicon-based semiconductors and particularly in emerging phase-change-memory (PCM) chips, yet the detailed functional mechanism as well as its experimental demons…

Unravelling the atomic mechanisms of tetrahedral doping in chalcogenide glass for electrical switching materials Open

Rongchuan Gu, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao , et al. · 2023

This study highlights the crucial role of Si doping in OTS materials by revealing the atomic mechanisms of Si doping that result in high thermal stability, enhanced endurance, and reduced V th drift in a-GeSiSe materials for ovonic thresho…

Unravelling the Atomic Mechanisms of Tetrahedral Doping in Chalcogenide Glass for Electrical Switching Materials Open

Rongchuan Gu, Meng Xu, Yongpeng Liu, Yinghua Shen, Chong Qiao , et al. · 2023

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration Open

Rongchuan Gu, Meng Xu, Chong Qiao, Cai‐Zhuang Wang, Kai‐Ming Ho , et al. · 2022

Unveiling the Mechanism of as Doping in High-Endurance Threshold Switching Materials Open

Rongchuan Gu, Meng Xu, Chong Qiao, Cai‐Zhuang Wang, Kai‐Ming Ho , et al. · 2022

Structural features of chalcogenide glass SiTe: An ovonic threshold switching material Open

Rongchuan Gu, Meng Xu, Runsheng Yu, Chong Qiao, Cai‐Zhuang Wang , et al. · 2021

The state-of-the-art phase-change memory is usually composed of ovonic threshold switching (OTS) material and ovonic memory switching (OMS) material for selective and data storage, respectively. OMS materials have been intensely studied, w…

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