Ruijun Lan
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View article: Research on transient energy storage capacity of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite towards micro type laser
Research on transient energy storage capacity of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite towards micro type laser Open
A passively Q-switched Tm:YAP laser based on a CH 3 NH 3 PbI 3 /MoS 2 heterojunction saturable absorber has been demonstrated to verify the transient energy storage capacity of the CH 3 NH 3 PbI 3 perovskite and is promising for integratio…
View article: WSe<sub>2</sub>/BN heterostructure as saturable absorber for a diode-pumped passively Q-switched 2 µm solid-state laser
WSe<sub>2</sub>/BN heterostructure as saturable absorber for a diode-pumped passively Q-switched 2 µm solid-state laser Open
We have successfully achieved the synthesis of heterojunction consisting of WSe 2 and BN, by using a liquid phase exfoliation method, and characterization of the prepared materials under the microstructure. The WSe 2 /BN heterojunction was…
View article: Mgf-Yolo: A Lightweight Industrial Inspection Algorithm for Small Defects on Steel Surfaces
Mgf-Yolo: A Lightweight Industrial Inspection Algorithm for Small Defects on Steel Surfaces Open
View article: WSe2/BN Heterostructure as the saturable absorber for a diode-pumped passively Q-switched 2 μm solid-state laser
WSe2/BN Heterostructure as the saturable absorber for a diode-pumped passively Q-switched 2 μm solid-state laser Open
We have successfully achieved the synthesis of heterojunction consisting of WSe2 and BN, by using a liquid phase exfoliation method，and characterization of the prepared materials under the microstructure. The WSe2/BN heterojunction was use…
View article: Extreme events in two laterally-coupled semiconductor lasers
Extreme events in two laterally-coupled semiconductor lasers Open
Rogue waves (RWs) are extreme and rare waves that emerge unexpectedly in many natural systems and their formation mechanism and prediction have been extensively studied. Here, we numerically demonstrate the appearance of extreme events (EE…
View article: High-power long-wave infrared laser based on polarization beam coupling technique
High-power long-wave infrared laser based on polarization beam coupling technique Open
We demonstrated a high-power long-wave infrared laser based on a polarization beam coupling technique. An average output power at $8.3~\unicode[STIX]{x03BC}\text{m}$ of 7.0 W was achieved at a maximum available pump power of 107.6 W, corre…
View article: Passively Q-Switched Yb:Lu<sub>0.74</sub>Y<sub>0.23</sub>La<sub>0.01</sub>VO<sub>4</sub> Laser Based on MoTe<sub>2</sub> Saturable Absorber
Passively Q-Switched Yb:Lu<sub>0.74</sub>Y<sub>0.23</sub>La<sub>0.01</sub>VO<sub>4</sub> Laser Based on MoTe<sub>2</sub> Saturable Absorber Open
A passively-Q-switched Yb:Lu1-x-yYxLayVO4 laser based on a two-dimension (2D) molybdenum ditelluride (MoTe2) saturable absorber (SA) is reported for the first time to the best of our k…
View article: Thulium doped LuAG ceramics for passively mode locked lasers
Thulium doped LuAG ceramics for passively mode locked lasers Open
Passive mode-locking of a thulium doped Lu3Al5O12 ceramic laser is demonstrated at 2022 nm. By applying different near surface GaSb-based saturable absorber mirrors, stable self-starting mode-locked operati…
View article: Semiconductor saturable absorber Q-switching of a holmium micro-laser
Semiconductor saturable absorber Q-switching of a holmium micro-laser Open
We report on a Holmium micro-laser passively Q-switched by a semiconductor saturable absorber (SSA), for the first time to the best of our knowledge. It is based on a 1 at.% Ho:YAG ceramic with good energy storage capability and several co…
View article: Broadly tunable mode-locked Ho:YAG ceramic laser around 21 µm
Broadly tunable mode-locked Ho:YAG ceramic laser around 21 µm Open
A passively mode-locked Ho:YAG ceramic laser around 2.1 µm is demonstrated using GaSb-based near-surface SESAM as saturable absorber. Stable and self-starting mode-locked operation is realized in the entire tuning range from 2059 to 2121 n…
View article: Passive Q-switching of microchip lasers based on Ho:YAG ceramics
Passive Q-switching of microchip lasers based on Ho:YAG ceramics Open
A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single- and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr2+:ZnSe saturable absorbers (SAs). Employing SWCN…
View article: Passively mode-locked Nd:LuAG laser at 1338 nm
Passively mode-locked Nd:LuAG laser at 1338 nm Open
A stable passive mode-locking Nd:LuAG laser at 1338 nm with a semiconductor saturable absorber mirror (SESAM) is demonstrated for the first time. The mode-locking Nd:LuAG laser yielded a maximum average output power of 0.54Wwith a slope ef…