Ryan D. Hool
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View article: Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si
Effect of Threading Dislocations on GaInP Front- and Rear-Junction Solar Cells Grown on Si Open
We compare the performance of front-junction (FJ) and rear-heterojunction (RHJ) 1.9 eV GaInP solar cells grown on Si by molecular beam epitaxy. First, time-resolved photoluminescence showed a minority carrier lifetime of 11.7 ns for n -GaI…
View article: Delta-Doping for Enhanced III-V Tunnel Junction Performance
Delta-Doping for Enhanced III-V Tunnel Junction Performance Open
We show that delta-doping boosts the performance of tunnel junctions (TJs) used as interconnects in III-V multijunction solar cells by orders of magnitude. The peak current of our baseline TJ design consisting of p-GaAs/n-GaAs surrounded b…
View article: Challenges of relaxed <i>n</i>-type GaP on Si and strategies to enable low threading dislocation density
Challenges of relaxed <i>n</i>-type GaP on Si and strategies to enable low threading dislocation density Open
We directly show that doping type strongly affects the threading dislocation density (TDD) of relaxed GaP on Si, with n-type GaP having a TDD of ∼3.1 × 107 cm−2, nearly 30× higher than both p-type and unintentionally doped GaP at ∼1.1 × 10…
View article: Low-threshold InP quantum dot and InGaP quantum well visible lasers on\n silicon (001)
Low-threshold InP quantum dot and InGaP quantum well visible lasers on\n silicon (001) Open
Monolithically combining silicon nitride (SiNx) photonics technology with III-V active devices could open a broad range of on-chip applications spanning a wide wavelength range of ~400-4000 nm. With the development of nitride, arsenide, an…