Ryousuke Sano
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View article: Electrically induced change in HfO<sub>2</sub>/1-monolayer TiO<sub>2</sub>/SiO<sub>2</sub> metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies
Electrically induced change in HfO<sub>2</sub>/1-monolayer TiO<sub>2</sub>/SiO<sub>2</sub> metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies Open
Metal-oxide-semiconductor capacitors with HfO 2 /1-monolayer TiO 2 /SiO 2 stacks were examined to explore the origin of the interface dipole modulation. The capacitance–voltage ( C–V ) measurements exhibited that the polarity of the interf…