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View article: Testbeam characterization of a SiGe BiCMOS monolithic silicon pixel detector with internal gain layer
Testbeam characterization of a SiGe BiCMOS monolithic silicon pixel detector with internal gain layer Open
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 μm pitch, read by low-n…
View article: Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer
Testbeam Characterization of a SiGe BiCMOS Monolithic Silicon Pixel Detector with Internal Gain Layer Open
A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 μm pitch, read by low-n…
View article: Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer Open
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 × 10 16 n eq /cm 2 , and then tested us…
View article: Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer
Testbeam results of irradiated SiGe BiCMOS monolithic silicon pixel detector without internal gain layer Open
Samples of the monolithic silicon pixel ASIC prototype produced in 2022 within the framework of the Horizon 2020 MONOLITH ERC Advanced project were irradiated with 70 MeV protons up to a fluence of 1 x 1016 neq/cm2, and then tested using a…
View article: Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer
Radiation tolerance of SiGe BiCMOS monolithic silicon pixel detectors without internal gain layer Open
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 × 10 16 1 MeV n eq /cm 2 . The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readou…
View article: Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer
Radiation Tolerance of SiGe BiCMOS Monolithic Silicon Pixel Detectors without Internal Gain Layer Open
A monolithic silicon pixel prototype produced for the MONOLITH ERC Advanced project was irradiated with 70 MeV protons up to a fluence of 1 x 10^16 1 MeV n_eq/cm^2. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout …
View article: Intel Stratix 10 FPGA design for track reconstruction for the ATLAS experiment at the HL-LHC
Intel Stratix 10 FPGA design for track reconstruction for the ATLAS experiment at the HL-LHC Open
The fast reconstruction of charged particle tracks with high efficiency and track quality is an essential part of the online data selection for the ATLAS experiment at the High Luminosity LHC. Dedicated custom designed hardware boards and …
View article: 20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer
20 ps time resolution with a fully-efficient monolithic silicon pixel detector without internal gain layer Open
A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 μm pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 μm thic…
View article: Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype
Picosecond Avalanche Detector — working principle and gain measurement with a proof-of-concept prototype Open
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a (NP) drift (NP) gain structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses …
View article: Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype
Testbeam results of the Picosecond Avalanche Detector proof-of-concept prototype Open
The proof-of-concept prototype of the Picosecond Avalanche Detector, a multi-PN junction monolithic silicon detector with continuous gain layer deep in the sensor depleted region, was tested with a beam of 180 GeV pions at the CERN SPS. Th…
View article: Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology
Efficiency and time resolution of monolithic silicon pixel detectors in SiGe BiCMOS technology Open
A monolithic silicon pixel detector prototype has been produced in the SiGe BiCMOS SG13G2 130 nm node technology by IHP. The ASIC contains a matrix of hexagonal pixels with pitch of approximately 100 μm. Three analog pixels were calibrated…
View article: The trigger and data acquisition system of the FASER experiment
The trigger and data acquisition system of the FASER experiment Open
The FASER experiment is a new small and inexpensive experiment that is placed 480 meters downstream of the ATLAS experiment at the CERN LHC. FASER is designed to capture decays of new long-lived particles, produced outside of the ATLAS det…
View article: A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology
A 50 ps resolution monolithic active pixel sensor without internal gain in SiGe BiCMOS technology Open
A monolithic pixelated silicon detector designed for high time resolution has\nbeen produced in the SG13G2 130 nm SiGe BiCMOS technology of IHP\nMikroelektronik. This proof-of-concept chip contains hexagonal pixels of 65\n{\\mu}m and 130 {…
View article: Production and integration of the ATLAS Insertable B-Layer
Production and integration of the ATLAS Insertable B-Layer Open
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel …
View article: Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project
Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project Open
The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on s…
View article: Multiplicity and transverse momentum fluctuations in inelastic proton–proton interactions at the CERN Super Proton Synchrotron
Multiplicity and transverse momentum fluctuations in inelastic proton–proton interactions at the CERN Super Proton Synchrotron Open
Measurements of multiplicity and transverse momentum fluctuations of charged\nparticles were performed in inelastic p+p interactions at 20, 31, 40, 80 and\n158 GeV/c beam momentum. Results for the scaled variance of the multiplicity\ndistr…
View article: Measurements of π± , K± , KS0 , Λ and proton production in proton–carbon interactions at 31 GeV/ c with the NA61/SHINE spectrometer at the CERN SPS
Measurements of π± , K± , KS0 , Λ and proton production in proton–carbon interactions at 31 GeV/ c with the NA61/SHINE spectrometer at the CERN SPS Open
Measurements of hadron production in p + C interactions at 31 GeV/ c are performed using the NA61/SHINE spectrometer at the CERN SPS. The analysis is based on the full set of data collected in 2009 using a graphite target with a thickness …