Explanipedia

Electrical and magnetic properties of atomic layer deposited cobalt oxide and iron oxide stacks Open

Kristjan Kalam, Raul Rammula, Jekaterina Kozlova, Tanel Käämbre, Peeter Ritslaid , et al. · 2025

We observed that thin films exhibit exceptional magnetic coercivity and saturation magnetization. These results demonstrate a route to engineer ferrite-based thin films with superior magnetic performance at nanoscale thicknesses.

Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature Open

Emilio Pérez-Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Felix Reichmann , et al. · 2024

Producción Científica

On the Asymmetry of Resistive Switching Transitions Open

Guillermo Vinuesa, H. García, Eduardo Pérez, Christian Wenger, I. Íñiguez-de-la-Torre , et al. · 2024

In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal stacks is investigated, mainly focusing on the analysis of set and reset transitions. The electrical measurements in a wide temperature range reveal t…

Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states Open

F. Jiménez-Molinos, Guillermo Vinuesa, H. García, S. Dueñas, Helena Castán , et al. · 2024

We acknowledge grants PID2022-139586NB-C42, PID2022-139586NB-C43, PID2022-139586NB-C44 funded by MICIU/AEI/10.13039/501100011033 and FEDER, UE. IMB authors thank the CSIC funding through project 20225AT012 and the Generalitat de Catalunya-…

Reset Transition in Hfo2-Based Memristors Using a Constant Power Signal Open

H. García, Guillermo Vinuesa, Mireia Bargalló González, F. Campabadal, Helena Castán , et al. · 2024

Impact of the temperature on the conductive filament morphology in HfO2-based RRAM Open

Guillermo Vinuesa, H. García, Samuel Poblador, Mireia Bargalló González, F. Campabadal , et al. · 2023

A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories Open

D. Maldonado, Guillermo Vinuesa, Samuel Aldana, Fernando Aguirre, A. Cantudo , et al. · 2023

The switching dynamics of TiN/Ti/HfO2/W-based resistive memories is investigated. The analysis consisted in \nthe systematic application of voltage sweeps with different ramp rates and temperatures. The obtained results \ngive clear insigh…

Thermal Dependence of the Resistance of TiN/Ti/HfO2/Pt Memristors Open

F. Jiménez-Molinos, Guillermo Vinuesa, H. García, Aivar Tarre, Aile Tamm , et al. · 2023

Producción Científica

Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices Open

H. García, Guillermo Vinuesa, E. García-Ochoa, Fernando Aguirre, Mireia Bargalló González , et al. · 2023

Memristive devices have shown a great potential for non-volatile memory circuits and neuromorphic computing. For both applications it is essential to know the physical mechanisms behind resistive switching; in particular, the time response…

Variability and power enhancement of current controlled resistive switching devices Open

Guillermo Vinuesa, H. García, José Miguel Lendínez, E. García-Ochoa, Mireia Bargalló González , et al. · 2023

characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle variability \nbeing analysed in each case. Experimental measurements indicate a clear improvement on resistance states \nstability when …

Thermal effects on TiN/Ti/HfO2/Pt memristors charge conduction Open

F. Jiménez-Molinos, Guillermo Vinuesa, H. García, Aivar Tarre, Aile Tamm , et al. · 2022

TiN/Ti/HfO2/Pt resistive switching devices have been fabricated, measured, and modeled. After programming the devices in the low resistance state, the current–voltage characteristic below the reset switching voltage was measured at differe…

Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition Open

Kristjan Kalam, Markus Otsus, Jekaterina Kozlova, Aivar Tarre, Aarne Kasikov , et al. · 2022

HfO2 and Fe2O3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization w…

An experimental and simulation study of the role of thermal effects on variability in TiN/Ti/HfO2/W resistive switching nonlinear devices Open

D. Maldonado, Cristina Aguilera-Pedregosa, Guillermo Vinuesa, H. García, S. Dueñas , et al. · 2022

An in-depth simulation and experimental study has been performed to analyze thermal effects on the variability of resistive memories. Kinetic Monte Carlo (kMC) simulations, that reproduce well the nonlinearity and stochasticity of resistiv…

Empirical Characterization of ReRAM Devices Using Memory Maps and a Dynamic Route Map Open

Rodrigo Picos, Stavros G. Stavrinides, Mohamad Moner Al Chawa, Carol de Benito, S. Dueñas , et al. · 2022

Memristors were proposed in the early 1970s by Leon Chua as a new electrical element linking charge to flux. Since that first introduction, these devices have positioned themselves to be considered as possible fundamental ones for the gene…

Study of TiN/Ti/HfO2/W resistive switching devices: characterization and modeling of the set and reset transitions using an external capacitor discharge Open

H. García, F. Jiménez-Molinos, Guillermo Vinuesa, Mireia Bargalló González, J.B. Roldán , et al. · 2022

Producción Científica

Empirical Characterization of ReRAM devices using Memory Maps and Dynamic Route Map Open

Rodrigo Picos, Stavros G. Stavrinides, Mohamad Moner Al Chawa, Carol de Benito, S. Dueñas , et al. · 2022

Memristors were proposed in the early ’70s of the XXth century by Leon Chua as a new electrical element linking the charge and the flux. Since that first introduction, these devices have positioned themselves to be considered as possibly f…

Effect of Dielectric Thickness on Resistive Switching Polarity in TiN/Ti/HfO2/Pt Stacks Open

Guillermo Vinuesa, H. García, Mireia Bargalló González, Kristjan Kalam, M. Zabala , et al. · 2022

In recent years, several materials and metal-insulator-metal devices are being intensively studied as prospective non-volatile memories due to their resistive switching effect. In this work, thickness-dependent resistive switching polarity…

Structure and Electrical Behavior of Hafnium-Praseodymium Oxide Thin Films Grown by Atomic Layer Deposition Open

Kaupo Kukli, Lauri Aarik, Guillermo Vinuesa, S. Dueñas, Helena Castán , et al. · 2022

Crystal structure and electrical properties of hafnium-praseodymium oxide thin films grown by atomic layer deposition on ruthenium substrate electrodes were characterized and compared with those of undoped HfO2 films. The HfO2 reference fi…

Influences of the Temperature on the Electrical Properties of HfO2-Based Resistive Switching Devices Open

H. García, J.C. De Boo, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices , et al. · 2021

In the attempt to understand the behavior of HfO2-based resistive switching devices at low temperatures, TiN/Ti/HfO2/W metal–insulator–metal devices were fabricated; the atomic layer deposition technique was used to grow the high-k layer. …

Standards for the Characterization of Endurance in Resistive Switching Devices Open

Mario Lanza, Rainer Waser, Daniele Ielmini, J. Joshua Yang, Ludovic Goux , et al. · 2021

Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic …

Performance Assessment of Amorphous HfO 2 -Based RRAM Devices for Neuromorphic Applications Open

Óscar G. Ossorio, Guillermo Vinuesa, H. García, Benjamín Sahelices, S. Dueñas , et al. · 2021

The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile charact…

Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications Open

Óscar G. Ossorio, Guillermo Vinuesa, H. García, Benjamín Sahelices, S. Dueñas , et al. · 2021

Fabrication, characterization and modeling of TiN/Ti/HfO2/W memristors: programming based on an external capacitor discharge Open

F. Jiménez-Molinos, H. García, Mireia Bargalló González, S. Dueñas, Helena Castán , et al. · 2021

Hafnium oxide based memristors were fabricated and multilevel programming driven by a capacitor discharge current through the device was performed. Furthermore, the dynamic memdiode model was used for modeling and analyzing the experimenta…

Semiempirical Memdiode Model for Resistive Switching Devices in Dynamic Regimes Open

Cristina Santa Cruz González, Benjamín Sahelices, J. Jiménez, Óscar G. Ossorio, Helena Castán , et al. · 2021

Producción Científica

Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices Open

Guillermo Vinuesa, Óscar G. Ossorio, H. García, Benjamín Sahelices, Helena Castán , et al. · 2021

Study of the set and reset transitions in HfO2-based ReRAM devices using a capacitor discharge Open

H. García, Guillermo Vinuesa, Óscar G. Ossorio, Benjamín Sahelices, Helena Castán , et al. · 2021

Producción Científica

Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media Open

Tauno Kahro, Aivar Tarre, Tanel Käämbre, Helle‐Mai Piirsoo, Jekaterina Kozlova , et al. · 2021

Producción Científica

Thermoelectrical Characterization of Piezoelectric Diaphragms: Towards a Better Understanding of Ferroelectrics for Future Memory Applications Open

Guillermo Vinuesa, Pelayo Marín-Villa, Óscar G. Ossorio, Benjamín Sahelices, H. García , et al. · 2021

This work deals with the thermoelectric characterization of commercial lead zirconate titanate (PZT) based piezoelectric diaphragms. An in-depth analysis of the piezo- and ferroelectric behavior of the samples was carried out by measuring …

Atomic layer deposited nanolaminates of zirconium oxide and manganese oxide from manganese(III)acetylacetonate and ozone Open

Kristjan Kalam, Raul Rammula, Peeter Ritslaid, Tanel Käämbre, Joosep Link , et al. · 2021

Atomic layer deposition method was used to grow thin films consisting of ZrO 2 and MnO x layers. Magnetic and electric properties were studied of films deposited at 300 °C. Some deposition characteristics of the manganese(III)acetylacetona…

Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications Open

Óscar G. Ossorio, Guillermo Vinuesa, H. García, Benjamín Sahelices, S. Dueñas , et al. · 2021

The use of thin layers of amorphous hafnium oxide has been shown to be suitable for the manufacture of Resistive Random-Access memories (RRAM). These memories are of great interest because of their simple structure and non-volatile charact…

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