Souvik Mahapatra
YOU?
Author Swipe
View article: 0866 Role of transcriptional elongation in dermal fat development
0866 Role of transcriptional elongation in dermal fat development Open
View article: The Intersection of Sports Rehabilitation, Disability Law, And Technological Innovations: A Political Evolution and Scientific Innovation of Legal Protections for Athletes with Disabilities in India, The UK, And The US
The Intersection of Sports Rehabilitation, Disability Law, And Technological Innovations: A Political Evolution and Scientific Innovation of Legal Protections for Athletes with Disabilities in India, The UK, And The US Open
The intersection of sports rehabilitation and disability law is crucial in ensuring that athletes, including those recovering from sports-related injuries, have access to equitable rehabilitation services. In particular, the Americans with…
View article: Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors
Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors Open
View article: IEEE Transactions on Electron Devices publication information
IEEE Transactions on Electron Devices publication information Open
View article: IEEE Transactions on Electron Devices publication information
IEEE Transactions on Electron Devices publication information Open
View article: IEEE Transactions on Electron Devices publication information
IEEE Transactions on Electron Devices publication information Open
View article: Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs
Modeling of DC - AC NBTI Stress - Recovery Time Kinetics in P-Channel Planar Bulk and FDSOI MOSFETs and FinFETs Open
The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold voltage shift (ΔVT) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs and SOI FinFETs. BAT uses uncorrelated contributions …
View article: Modeling of HCD Kinetics Under Full V<sub>G</sub> – V<sub>D</sub> Space, Different Experimental Conditions and Across Different Device Architectures
Modeling of HCD Kinetics Under Full V<sub>G</sub> – V<sub>D</sub> Space, Different Experimental Conditions and Across Different Device Architectures Open
A SPICE compatible compact modeling framework is discussed for Hot Carrier Degradation (HCD) stress spanning the entire drain (VD) and gate (VG) voltage space and wide range of temperature (T). It can model the HCD ti…
View article: Special Issue on Reliability
Special Issue on Reliability Open
Reliability is an important consideration during semiconductor technology development, which ensures that the performances of devices, circuits, and systems are maintained over a specified period of time, leading to successful products. De…
View article: Modeling the Interdependences Between Voltage Fluctuation and BTI Aging
Modeling the Interdependences Between Voltage Fluctuation and BTI Aging Open
With technology scaling, the susceptibility of circuits to different reliability degradations is steadily increasing. Aging in transistors due to bias temperature instability (BTI) and voltage fluctuation in the power delivery network of c…