S. Raghaw
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View article: Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux
Low Temperature Reactive Flux Growth of SiC and SiC-AlNusing Al-Si Flux Open
Al - 12% Si alloy system was used as nutrient flux to grow silicon carbide at low temperature by reactive flux growth. Thick films were grown below 900°C on a SiC substrate having Al-Si melt rotated with a speed of 30rpm in a graphite cruc…