Saeed Mohammadi
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View article: When AI Bends Metal: AI-Assisted Optimization of Design Parameters in Sheet Metal Forming
When AI Bends Metal: AI-Assisted Optimization of Design Parameters in Sheet Metal Forming Open
Numerical simulations have revolutionized the industrial design process by reducing prototyping costs, design iterations, and enabling product engineers to explore the design space more efficiently. However, the growing scale of simulation…
View article: Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions
Investigating vertical charge plasma tunnel field effect transistors beyond semiclassical assumptions Open
In this paper, we examine the effects of subband quantization on the efficacy of an L-shaped gate vertical dopingless tunneling field-effect transistor. The proposed architecture leverages an intrinsic tunneling interface that is fully ali…
View article: Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
Correction: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study Open
View article: Fringe-fields-modulated double-gate tunnel-FET biosensor
Fringe-fields-modulated double-gate tunnel-FET biosensor Open
This paper aims to evaluate a groundbreaking bio-TFET that utilizes the fringe fields capacitance concept to detect neutral and charged biomolecules. While facilitating fabrication process and scalability, this innovative bio-TFET is able …
View article: Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications
Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications Open
A vertical tunneling field effect transistor composed of a doping-less tunneling heterojunction and an n + -drain is presented in this paper. Two highly-doped p + silicon layers are devised to induce holes in an intrinsic source region. Du…
View article: Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction
Impact of trap-related non-idealities on the performance of a novel TFET-based biosensor with dual doping-less tunneling junction Open
This article presents a novel dielectric-modulated biosensor based on a tunneling field-effect transistor. It comprises a dual doping-less tunneling junction that lies above an n + drain region. By employing the wet-etching technique, two …
View article: Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study Open
This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control…
View article: Monte Carlo Methods to Simulate the Propagation of the Created Atomic/ Nuclear Particles from Underground Piezoelectric Rocks inside the Fractures before or during the Earthquakes
Monte Carlo Methods to Simulate the Propagation of the Created Atomic/ Nuclear Particles from Underground Piezoelectric Rocks inside the Fractures before or during the Earthquakes Open
Up to now, many studies have been performed on particle radiations before or during earthquakes (EQs). In our previous study, with the help of piezoelectricity relationships and the elastic energy formula, the MCNPX simulation code was app…
View article: A Novel Vertical Si TFET With Dual Doping-Less Tunneling Junction: A Simulation Study Including Trap-Related Non-Idealities
A Novel Vertical Si TFET With Dual Doping-Less Tunneling Junction: A Simulation Study Including Trap-Related Non-Idealities Open
In this article, we propose a novel vertical TFET that benefits from dual doping-less tunneling junction. Due to the low on-state current of silicon-based TFETs, we employ a dual-source configuration and a high-k dielectric material in the…
View article: A Machine Learning Approach for Prosumer Management in Intraday Electricity Markets
A Machine Learning Approach for Prosumer Management in Intraday Electricity Markets Open
Prosumer operators are dealing with extensive challenges to participate in short-term electricity markets while taking uncertainties into account. Challenges such as variation in demand, solar energy, wind power, and electricity prices as …
View article: Econometric Modeling of Intraday Electricity Market Price with Inadequate Historical Data
Econometric Modeling of Intraday Electricity Market Price with Inadequate Historical Data Open
The intraday (ID) electricity market has received an increasing attention in the recent EU electricity-market discussions. This is partly because the uncertainty in the underlying power system is growing and the ID market provides an adjus…
View article: A Circuit for Simultaneous Reception of Data and Power Using a Solar Cell
A Circuit for Simultaneous Reception of Data and Power Using a Solar Cell Open
This paper presents a circuit for simultaneous reception of optical power and data using a solar cell. The circuit employs a switched-inductor boost DC-DC converter for energy harvesting and a low-power thresholding receiver for data recep…
View article: Tight–Binding Analysis of Electronic Structure of Germanene Sheet and Nanoribbons Including Stone-Wales Defect
Tight–Binding Analysis of Electronic Structure of Germanene Sheet and Nanoribbons Including Stone-Wales Defect Open
In this paper, we investigate the electronic characteristics of germanene using the tight binding approximation. Germanene as the germanium-based analogue of graphene has attracted much research interest in recent years. Our analysis is fo…
View article: Full Baseband to RF Reader Design for a Passive RFID Tag with Multiple Environmental Sensors
Full Baseband to RF Reader Design for a Passive RFID Tag with Multiple Environmental Sensors Open
Radio-frequency identification (RFID) readers are being widely used for transmitting and receiving information from chips or tags. The RF reader in this project will be used for communicating with previously designed self-powered sensors f…
View article: Erratum: “Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization” [Appl. Phys. Lett. <b>107</b>, 203103 (2015)]
Erratum: “Flexible complementary metal oxide semiconductor microelectrode arrays with applications in single cell characterization” [Appl. Phys. Lett. <b>107</b>, 203103 (2015)] Open
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View article: nMOSFET RF and noise model on standard 45nm SOI technology
nMOSFET RF and noise model on standard 45nm SOI technology Open
A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
View article: Virtual-Source based accurate model for predicting noise behavior at high frequencies in nanoscale PMOS SOI transistors
Virtual-Source based accurate model for predicting noise behavior at high frequencies in nanoscale PMOS SOI transistors Open
Complementary Metal Oxide Semiconductor (CMOS) technology at the nanometre scale is an excellent platform to implement monolithically integratedsystems because of the low cost of manufacturing and ease of integration. Newly developed CMOS …
View article: Flexible strain sensors based on electrostatically actuated graphene flakes
Flexible strain sensors based on electrostatically actuated graphene flakes Open
In this paper we present flexible strain sensors made of graphene flakes fabricated, characterized, and analyzed for the electrical actuation and readout of their mechanical vibratory response in strain-sensing applications. For a typical …
View article: Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals
Simulation of Radiation Spectra of Planar Channelled Electrons in Thick Silicon Crystals Open
Dechanneling processes for electrons based on the solution of Fokker-Planck equation have been studied. The dynamics of particle distribution density in depth of Crystal has been investigated in dependence on both energy and initial scatte…
View article: Fabrication and Characterization of Novel Willemite Nanobioceramic for Bone Defect Repair
Fabrication and Characterization of Novel Willemite Nanobioceramic for Bone Defect Repair Open