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View article: Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskites
Alleviating nanostructural phase impurities enhances the optoelectronic properties, device performance and stability of cesium-formamidinium metal–halide perovskites Open
The impact of the composition of the A-site cations on the intra-domain defect density in cesium-formamidinium perovskite formulations is modulated via alloying.
View article: Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cells
Interface passivation for 31.25%-efficient perovskite/silicon tandem solar cells Open
Silicon solar cells are approaching their theoretical efficiency limit of 29%. This limitation can be exceeded with advanced device architectures, where two or more solar cells are stacked to improve the harvesting of solar energy. In this…
View article: Scanning Transmission Ion Microscopy Time-of-Flight Spectroscopy Using 20 keV Helium Ions
Scanning Transmission Ion Microscopy Time-of-Flight Spectroscopy Using 20 keV Helium Ions Open
Scanning transmission ion microscopy imaging was performed whilst using a delay-line detector to record the impact position and arrival time of transmitted ions or neutrals. The incident helium ion beam had an energy of 20 keV and the arri…
View article: New Imaging modality for surface and sub-surface imaging using Scanning Transmission Helium Ion Microscopy
New Imaging modality for surface and sub-surface imaging using Scanning Transmission Helium Ion Microscopy Open
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View article: Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods
Evaluation of secondary electron intensities for dopant profiling in ion implanted semiconductors: a correlative study combining SE, SIMS and ECV methods Open
This study evaluates the secondary electron (SE) dopant contrast in scanning electron microscopy (SEM) and helium ion microscopy (HIM) on boron implanted silicon sample. Complementary techniques like secondary ion mass spectrometry and ele…