Explanipedia

AlGaAs VSCELs grown on thin 150 mm germanium substrates Open

Sara-Jayne Gillgrass, Jack Baker, Craig P. Allford, J. I. Davies, Samuel Shutts , et al. · 2025

To reduce material usage and minimise device cost the use of reduced substrate thickness is considered in high volume vertical-cavity surface-emitting laser (VCSEL) manufacturing. For large-diameter VCSEL wafers, germanium (Ge) is emerging…

Achieving selectivity and reduced absorption for low loss monolithic InAs QD based III-V photonic integration Open

Pawan Mishra, Abigail Enderson, Fwoziah Albeladi, Dun Qiao, George Mathew Jandu , et al. · 2025

A straightforward method to achieve monolithic selective area intermixing in an epitaxially grown InAs quantum dot (QD) based laser structure is demonstrated, enabling the development of O-band monolithic photonic integrated circuits. Blue…

High Temperature Operation of Co-Doped InAs Quantum Dot Laser for O-Band Emission Open

Pawan Mishra, Lydia Jarvis, Chris Hodges, Abigail Enderson, Fwoziah Albeladi , et al. · 2025

We demonstrate high temperature operation of InAs quantum dot lasers through active region engineering. We grew an n-doped region within the InAs quantum dot (QD) layer and incorporated a 10 nm p-GaAs modulation-doped layer within a 43 nm …

Thermal Performance of 940 nm AlGaAs-Based VCSELs Grown on Germanium Open

John M. Baker, Craig P. Allford, Sara-Jayne Gillgrass, J. I. Davies, Samuel Shutts , et al. · 2025

VCSEL thermal resistances are determined from power-current-voltage-wavelength measurements performed on nominally identical epitaxial structures grown on Ge and GaAs substrates. We show that the effective thermal conductivity of the VCSEL…

Fabricating distributed feedback laser gratings with bismuth and gold focused ion beams Open

Ben Salmond, Demis D. John, William J. Mitchell, B.J. Thibeault, Torsten Richter , et al. · 2024

Fabricating first order gratings for laterally coupled distributed feedback (LC-DFB) lasers can be challenging due to aspect ratio dependent etching. Developments in focused ion beam (FIB) processing and source technology introduce the pot…

Modelling optical coherence tomography for biophotonics and photobiology using an electronically tunable mode-locked laser diode Open

Ifechi Ejidike, Samuel Shutts, David Bajek · 2024

We propose mode-locked laser diodes (MLLDs) for their deployment in a low-cost and portable optical coherence tomography (OCT) system. OCT is an essential imaging technique used for medical diagnoses in dermatology, ophthalmology, and card…

Design and characterisation of multi-mode interference reflector lasers for integrated photonics Open

Fwoziah Albeladi, Sara-Jayne Gillgrass, Josie Nabialek, Pawan Mishra, Richard Forrest , et al. · 2023

InAs quantum dot ridge waveguide lasers comprising single-port multi-mode-interference-reflectors (MMIR) and single-cleaved reflectors are designed, fabricated, and characterised, to demonstrate capability for optoelectronic-integrated-cir…

Impact of thermal oxidation uniformity on 150 mm GaAs- and Ge-substrate VCSELs Open

Sara-Jayne Gillgrass, Craig P. Allford, Tomas Peach, Jack Baker, A. D. Johnson , et al. · 2023

Vertical cavity surface emitting laser (VCSEL) devices and arrays are increasingly important in meeting the demands of today’s wireless communication and sensing systems. Understanding the origin of non-uniform wet thermal oxidation across…

Gain measurements on VCSEL material using segmented contact technique Open

Curtis Hentschel, Craig P. Allford, S-J Gillgrass, Josie Travers-Nabialek, Richard Forrest , et al. · 2023

We report direct measurements of the optical gain on vertical-cavity surface-emitting laser (VCSEL) material using a stripe-length method featuring segmented contacts. We utilise the similarity of the in-plane transverse electric (TE) pola…

VCSEL quick fabrication of 894.6 nm wavelength epi‐material for miniature atomic clock applications Open

Jack Baker, Craig P. Allford, Sara-Jayne Gillgrass, Tomas Peach, James Meiklejohn , et al. · 2022

A vertical cavity surface emitting laser (VCSEL) quick fabrication (VQF) process is applied to epitaxial materials designed for miniature atomic clock applications (MACs). The process is used to assess material quality and uniformity of a …

Theoretical analysis and modelling of degradation for III–V lasers on Si Open

Jianzhuo Liu, Mingchu Tang, Huiwen Deng, Samuel Shutts, Lingfang Wang , et al. · 2022

InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces a high density of threading dislocations (TDs), which limits the …

VCSEL Quick Fabrication for Assessment of Large Diameter Epitaxial Wafers Open

Jack Baker, Sara-Jayne Gillgrass, Craig P. Allford, Tomas Peach, Curtis Hentschel , et al. · 2022

Stripped-back representative VCSEL devices with a simple fabrication process that very closely approaches the performance of standard BCB-planarised devices have been produced. These VCSEL Quick Fabrication (VQF) devices achieve threshold …

The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers Open

Huiwen Deng, Lydia Jarvis, Zhibo Li, Zizhuo Liu, Mingchu Tang , et al. · 2022

The performance of O-band InAs/GaAs quantum-dot (QD) lasers grown by molecular beam epitaxy with three different doping strategies in the active region are investigated for a temperature range of 17 °C–97 °C. The lasing performance indicat…

Quick Fabrication VCSELs for Characterisation of Epitaxial Material Open

Jack Baker, Craig P. Allford, Sara-Jayne Gillgrass, Richard Forrest, D.G. Hayes , et al. · 2021

A systematic analysis of the performance of VCSELs, fabricated with a decreasing number of structural elements, is used to assess the complexity of fabrication (and therefore time) required to obtain sufficient information on epitaxial waf…

Optical gain and absorption of 1.55 <i>μ</i>m InAs quantum dash lasers on silicon substrate Open

Zhibo Li, Samuel Shutts, Ying Xue, Wei Luo, Kei May Lau , et al. · 2021

This Letter reports on the temperature-dependent optical gain and absorption features, including the quantum confined Stark effect, of an InAs/InGaAs quantum-dash laser directly grown on a (001) Si substrate, with the lasing wavelength wit…

All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates Open

Junjie Yang, Zizhuo Liu, Pamela Jurczak, Mingchu Tang, Keshuang Li , et al. · 2020

A high-performance III–V quantum-dot (QD) laser monolithically grown on Si is one of the most promising candidates for commercially viable Si-based lasers. Great efforts have been made to overcome the challenges due to the heteroepitaxial …

Quantum dot lasers for integrated photonics Open

Peter M. Smowton, Samuel Shutts, Robert J. Thomas, Stella N. Elliott, A. Sobiesierski , et al. · 2016

We review progress in the operating performance and the underlying physical mechanisms of InP quantum dot lasers and demonstrate applications in dual wavelength sources and monolithically integrated optoelectronics and microfluidics for ce…

InAsP/AlGaInP/GaAs QD laser operating at ∼770 nm Open

A. B. Krysa, J.S. Roberts, J. Devenson, Richard Beanland, Ivan B. Karomi , et al. · 2016

We present a study of metalorganic vapour phase epitaxy of ternary InAsP quantum dots in AlGaInP/GaAs for application in laser diodes. The properties of InAsP QD laser structures were compared with reference samples containing binary InP Q…

Analysing radiative and non-radiative recombination in InAs quantum dots grown on Si substrates for integrated laser applications Open

Jonathan R. Orchard, Christopher Woodhead, Samuel Shutts, Jiang Wu, A. Sobiesierski , et al. · 2016

Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have d…

In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates Open

Jonathan R. Orchard, Samuel Shutts, A. Sobiesierski, Jiang Wu, Mingchu Tang , et al. · 2016

The addition of elevated temperature steps (annealing) during the growth of InAs/GaAs quantum dot (QD) structures on Si substrates results in significant improvements in their structural and optical properties and laser device performance.…

InAsP quantum dot lasers grown by MOVPE Open

Ivan B. Karomi, Peter M. Smowton, Samuel Shutts, A. B. Krysa, Richard Beanland · 2015

We report on InAsP quantum dot lasers grown by MOVPE for 730-780 nm wavelength emission and compare performance with InP dot samples grown under similar conditions and with similar structures. 1-4 mm long, uncoated facet InAsP dot lasers e…

Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing Open

Samuel Shutts, Stella N. Elliott, Peter M. Smowton, A. B. Krysa · 2015

We explore the accessible wavelength range offered by InP/AlGaInP quantum dots (QD)s grown by metal–organic vapour phase epitaxy and explain how changes in growth temperature and wafer design can be used to influence the transition energy …

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