Sangjin Min
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View article: Monolithic Integration of GaN Thin Film and GaN Nanorods Pixels: Facile Growth of InGaN/GaN Quantum Wells for the Realization of Full Color Micro‐LED Display
Monolithic Integration of GaN Thin Film and GaN Nanorods Pixels: Facile Growth of InGaN/GaN Quantum Wells for the Realization of Full Color Micro‐LED Display Open
In this work, an innovative method is introduced for fabricating large‐area micro‐LEDs (µLEDs) specifically for green and blue emission through a combination of GaN thin film and GaN nanorods (NRs) on the orientation‐controlled template de…
View article: GaAs-based red micro-light-emitting diodes with an oxide perimeter region for improved external quantum efficiency
GaAs-based red micro-light-emitting diodes with an oxide perimeter region for improved external quantum efficiency Open
Red micro-light-emitting diodes (μ-LEDs) with AlGaInP/GaInP multiple quantum wells are fabricated with an oxide perimeter region to control the current injection path. When the values of the external quantum efficiency (EQE) of the 30 μm-s…
View article: Real-Time Tunable Gas Sensing Platform Based on SnO2 Nanoparticles Activated by Blue Micro-Light-Emitting Diodes
Real-Time Tunable Gas Sensing Platform Based on SnO2 Nanoparticles Activated by Blue Micro-Light-Emitting Diodes Open
Micro-light-emitting diodes (μLEDs) have gained significant interest as an activation source for gas sensors owing to their advantages, including room temperature operation and low power consumption. However, despite these benefits, challe…
View article: Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures
Origin of the High Forward Voltage and Low Voltage Efficiency of GaN-Based Light-Emitting Diodes at Cryogenic Temperatures Open
It is known that the forward voltage of the GaN-based light-emitting diode (LED) increases significantly at cryogenic temperatures. In this work, the origin of the high forward voltage is investigated by utilizing photoexcitation measureme…
View article: Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer
Growth of Ga0.70In0.30N/GaN Quantum-Wells on a ScAlMgO4 (0001) Substrate with an Ex-Situ Sputtered-AlN Buffer Layer Open
This study attempted to improve the internal quantum efficiency (IQE) of 580 nm emitting Ga0.70In0.30N/GaN quantum-wells (QWs) through the replacement of a conventional c-sapphire substrate and an in-situ low-temperature GaN (LT-GaN) buffe…
View article: Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics
Extracting the inherent ideality factor of a diode from electrical current–voltage characteristics Open
The ideality factor of a diode gives the information on the current conduction or recombination processes occurring inside the device. The ideality factor obtained from the electrical current–voltage ( I–V ) characteristics by the conventi…
View article: Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes
Understanding and evaluating the mean photon energy and the external quantum efficiency of light‐emitting diodes Open
The mean photon energy of a light‐emitting diode (LED) as recently defined in the IEC standard is theoretically examined. It is pointed out that defining the mean photon energy as an arithmetic mean of photon energies in the emission spect…
View article: Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes
Investigation and direct observation of sidewall leakage current of InGaN-Based green micro-light-emitting diodes Open
Electrical and optical characteristics of InGaN-based green micro-light-emitting diodes (µLEDs) with different active areas are investigated; results are as follows. Reverse and forward leakage currents of µLED increase as emission area is…
View article: Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis
Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis Open
This study aims to elucidate the carrier dynamics behind thermal droop in GaInN-based blue light-emitting diodes (LEDs) by separating multiple physical factors. To this end, first, we study the differential carrier lifetimes (DCLs) by meas…