Sanjay Krishna
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View article: Comprehensive simulation study of CMOS-compatible GeSn nBn photodetectors for e-SWIR technology
Comprehensive simulation study of CMOS-compatible GeSn nBn photodetectors for e-SWIR technology Open
Ge1−xSnx photodetectors (PDs) have emerged as a promising class of CMOS-compatible detectors for infrared (IR) and a wide range of applications, including sensing, healthcare, and space technology. In this study, we present a comprehensive…
View article: Structural and electrical characterization of short-wave infrared GeSn diodes [Invited]
Structural and electrical characterization of short-wave infrared GeSn diodes [Invited] Open
Group-IV (Si)GeSn alloys are rapidly emerging as promising candidates for monolithically integrated infrared (IR) photonic devices, offering tunable direct band gaps and full compatibility with CMOS technology. Ge 0.91 Sn 0.09 enables stro…
View article: Dual-Sacrificial-Layer Wet Etching for Transfer Printing of InP-Based Antimony-Containing Materials
Dual-Sacrificial-Layer Wet Etching for Transfer Printing of InP-Based Antimony-Containing Materials Open
We report a dual-sacrificial-layer-based lateral wet etching scheme for the heterogeneous integration of InP-based antimony-containing GaAsSb, InGaAsSb, and AlGaAsSb materials on foreign substrates such as Si. For a proof-of-concept demons…
View article: Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature
Effect of Multiplication and Charge Layers on the Gain in InGaAsSb/AlGaAs Avalanche Photodiodes at Room Temperature Open
This paper presents a theoretical analysis of npBp infrared (IR) barrier avalanche photodiode (APD) performance operating at 300 K based on a quaternary compound made of AIIIBV—InGaAsSb, lattice-matched to the GaSb substrate with a p-type …
View article: Enhanced UV–Vis Rejection Ratio in Metal/BaTiO<sub>3</sub>/β‐Ga<sub>2</sub>O<sub>3</sub> Solar‐Blind Photodetectors
Enhanced UV–Vis Rejection Ratio in Metal/BaTiO<sub>3</sub>/β‐Ga<sub>2</sub>O<sub>3</sub> Solar‐Blind Photodetectors Open
The fabrication and characterization of metal/BaTiO 3 /β‐Ga 2 O 3 solar‐blind photodetectors are reported. β‐Ga 2 O 3 is a promising material for solar‐blind photodetectors due to its large bandgap and the availability of low defect‐densit…
View article: Electroabsorption in InGaAs and GaAsSb <i>p-i-n</i> photodiodes
Electroabsorption in InGaAs and GaAsSb <i>p-i-n</i> photodiodes Open
The application of an electric field to a semiconductor can alter its absorption properties. This electroabsorption effect can have a significant impact on the quantum efficiency of detector structures. The photocurrents in bulk InGaAs and…
View article: Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm
Comparative Study of InGaAs and GaAsSb Nanowires for Room Temperature Operation of Avalanche Photodiodes at 1.55 μm Open
III V semiconductor nanowire based photodetectors have significant potential for remote sensing and LiDAR applications, particularly due to their ability to operate at 1.55 μm. Achieving room temperature operation and near unity absorption…
View article: Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection
Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection Open
The rising concentration of greenhouse gases, especially methane and carbon dioxide, is driving global temperature increases and exacerbating the climate crisis. Monitoring these gases requires detectors that operate in the extended short-…
View article: Lateral diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO
Lateral diffusion in 2-micron InGaAs/GaAsSb superlattice planar diodes using atomic layer deposition of ZnO Open
Avalanche photodiodes used for greenhouse gas sensing often use a mesa-structure that suffers from high surface leakage currents and edge breakdown. In this paper, we report 2-micron InGaAs/GaAsSb superlattice (SL) based planar PIN diodes …
View article: Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes
Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes Open
There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550n…
View article: Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 μm Wavelength Detection
Low Excess Noise, High Quantum Efficiency Avalanche Photodiodes for Beyond 2 μm Wavelength Detection Open
The increasing concentration of greenhouse gases, notably CH4 and CO2, has fueled global temperature increases, intensifying concerns regarding the prevailing climate crisis. Effectively monitoring these gases demands a detector spanning t…
View article: Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction
Structural and Electrical Properties of Grafted Si/GaAsSb Heterojunction Open
The short-wave infrared (SWIR) wavelength, especially 1.55 um, has attracted significant attention in various areas such as high-speed optical communication and LiDAR systems. Avalanche photodiodes (APDs) are a critical component as a rece…
View article: A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice
A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice Open
We use an ensemble Monte Carlo transport approach to calculate and compare the impact ionization and avalanche photodiode excess noise characteristics in three materials—a band-engineered InAlAs/InAsSb type-II superlattice, bulk InAs, and …
View article: Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection
Digital Alloy-Grown InAs/GaAs Short-Period Superlattices with Tunable Band Gaps for Short-Wavelength Infrared Photodetection Open
[Image: see text] The InGaAs lattice-matched to InP has been widely deployed as the absorption material in short-wavelength infrared photodetection applications such as imaging and optical communications. Here, a series of digital alloy (D…
View article: Unlocking the potential of Ti<sub>3</sub>C<sub>2</sub> electrodes: a data-driven capacitance prediction study
Unlocking the potential of Ti<sub>3</sub>C<sub>2</sub> electrodes: a data-driven capacitance prediction study Open
This study pioneers the use of machine learning to predict Ti 3 C 2 supercapacitor capacitance, evaluating KNN, ANN, and BRR models and uncovering key factors like cation mobility and scan rate that influence performance, with robust accur…
View article: InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability
InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability Open
High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a wide range of applications, including telecommunications, data centers, spectroscopy, imaging, light detection and ranging, medical diagnostics, an…
View article: Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection
Contactless measurement of minority carrier lifetime and background carrier concentration in unintentionally doped GaAsSb for short-wave infrared detection Open
Transient microwave reflectance (TMR) measurements are used to characterize the minority carrier lifetime and background carrier concentration of unintentionally doped (UID) Ga0.5As0.5Sb lattice matched to InP at room temperature. A p-i-n …
View article: Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP
Impact of residual doping on surface current of InGaAs/InP photodiode passivated with regrown InP Open
The viability of epitaxial regrowth of non-intentionally doped InP to passivate lateral mesa surfaces of InGaAs photodiodes lattice-matched to InP is investigated, evaluating whether the residual doping of the regrown layer can be responsi…
View article: Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance
Assessment of surface recombination in mid-wave infrared InAsSb nBn detectors using transient microwave reflectance Open
Investigation of surface recombination is an important area for infrared detectors as the demand for smaller pixels increases. In this study, we use transient microwave reflectance to characterize the minority carrier lifetime of InAsSb nB…
View article: Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates
Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates Open
Background doping polarity is a critical design parameter for the performance of many optoelectronic devices, including avalanche photodiodes. We have applied a technique by using capacitance–voltage (CV) measurements on double mesa struct…
Radiation damage and mitigation by minority carrier injection in GaSb/InAs and InAsSb/AlAsSb heterojunction barrier infrared detectors Open
Effects of gamma and proton irradiation, and of forward bias minority carrier injection, on minority carrier diffusion and photoresponse were investigated for long-wave (LW) and mid-wave (MW) infrared detectors with engineered majoritycarr…
View article: Demonstration of the long wavelength InAs/InAsSb type-II superlattice based methane sensor
Demonstration of the long wavelength InAs/InAsSb type-II superlattice based methane sensor Open
We report on the Ga-free InAs/InAsSb type-II superlattice (T2SL) based long wavelength infrared radiation (LWIR) methane (CH4) sensor operating at ~ 8 µm under thermoelectric (TE) cooling conditions. The presented device reaches detectivit…
View article: Dielectric Resonator Antenna-Coupled Antimonide-Based Detectors (DRACAD) for the Infrared
Dielectric Resonator Antenna-Coupled Antimonide-Based Detectors (DRACAD) for the Infrared Open
In an infrared photodetector, noise current (dark current) is generated\nthroughout the volume of the detector. Reducing the volume will reduce dark\ncurrent, but the corresponding smaller area will also reduce the received\nsignal. By usi…
View article: Plasmonic-coupled quantum dot photodetectors for mid-infrared photonics
Plasmonic-coupled quantum dot photodetectors for mid-infrared photonics Open
A plasmonic-coupled, InAs-based quantum dot photodetector fabricated for mid-wave infrared photonics is reported. The detector is designed to provide a broadband absorption [full width at half maximum (FWHM) ≳ 2 µm] peaked at ∼5.5 µm, corr…
View article: InAsSb-Based Infrared Photodetectors: Thirty Years Later On
InAsSb-Based Infrared Photodetectors: Thirty Years Later On Open
In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been m…
Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate Open
We report on engineering impact ionization characteristics of In 0.53 Ga 0.47 As/Al 0.48 In 0.52 As superlattice avalanche photodiodes (InGaAs/AlInAs SL APDs) on InP substrate to design and demonstrate an APD with low k -value. We design I…
View article: Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material
Vertical carrier transport in strain-balanced InAs/InAsSb type-II superlattice material Open
Anisotropic carrier transport properties of unintentionally doped InAs/InAs0.65Sb0.35 type-II strain-balanced superlattice material are evaluated using temperature- and field-dependent magnetotransport measurements performed in the vertica…