S. V. Ivanov
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View article: 2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters
2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters Open
This article describes GaN/AlN heterostructures for ultraviolet-C (UVC) emitters with multiple (up to 400 periods) two-dimensional (2D)-quantum disk/quantum well structures with the same GaN nominal thicknesses of 1.5 and 16 ML-thick AlN b…
View article: The Leningrad school and criticism of the “third way” concept
The Leningrad school and criticism of the “third way” concept Open
The article deals with the controversy around the concepts of “Leningrad school” and “Third way” of the development of the Leningrad fine arts, which arose in the first half of the 1970s among the leading Leningrad art critics and has not …
View article: Снижение плотности дислокаций в метаморфных гетероструктурах путем оптимизации конструкции буферного слоя с нелинейным профилем изменением состава
Снижение плотности дислокаций в метаморфных гетероструктурах путем оптимизации конструкции буферного слоя с нелинейным профилем изменением состава Open
Equilibrium distributions of misfit dislocation density along the growth direction of metamorphic buffer layers InxAl1-xAs/GaAs with maximum In content xmax ≥ 0.77 and different non-linear graded composition profiles (x ∝ z1/n) are calcula…
View article: Reduction of misfit dislocation density in metamorphic heterostructures by design optimization of the buffer layer with non-linear graded composition profile
Reduction of misfit dislocation density in metamorphic heterostructures by design optimization of the buffer layer with non-linear graded composition profile Open
Equilibrium distributions of misfit dislocation density along the growth direction of metamorphic buffer layers In x Al 1-x As/GaAs with maximum In content x max ≥0.77 and different non-linear graded composition profiles x propto z 1/n are…
View article: DETERMINING OPTIMAL PARAMETERS FOR GRINDING OF MICROPOROUS COATINGS IN TERMS OF ROUGHNESS INDEX
DETERMINING OPTIMAL PARAMETERS FOR GRINDING OF MICROPOROUS COATINGS IN TERMS OF ROUGHNESS INDEX Open
При круглом наружном шлифовании шеек валов автомобилей, тракторов, сельскохозяйственной и дорожно-строительной техники, восстановленных различными способами газотермического напыления, возникают проблемы, связанные с интенсивным засаливани…
View article: Simplifying Node Classification on Heterophilous Graphs with Compatible Label Propagation
Simplifying Node Classification on Heterophilous Graphs with Compatible Label Propagation Open
Graph Neural Networks (GNNs) have been predominant for graph learning tasks; however, recent studies showed that a well-known graph algorithm, Label Propagation (LP), combined with a shallow neural network can achieve comparable performanc…
View article: Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna
Bright Single-Photon Sources for the Telecommunication O-Band Based on an InAs Quantum Dot with (In)GaAs Asymmetric Barriers in a Photonic Nanoantenna Open
We report on single-photon emitters for the telecommunication O-band (1260–1360 nm), which comprise an InAs/(In)GaAs quantum dot with asymmetric barriers, placed inside a semiconductor tapered nanocolumn acting as a photonic nanoantenna. T…
View article: Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range
Monolayer-Scale GaN/AlN Multiple Quantum Wells for High Power e-Beam Pumped UV-Emitters in the 240–270 nm Spectral Range Open
Monolayer (ML)-scale GaN/AlN multiple quantum well (MQW) structures for electron-beam-pumped ultraviolet (UV) emitters are grown on c-sapphire substrates by using plasma-assisted molecular beam epitaxy under controllable metal-rich conditi…
View article: Nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays
Nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays Open
We realize and investigate a nonlinear metasurface taking advantage of intersubband transitions in ultranarrow GaN/AlN multi-quantum well heterostructures. Owing to huge band offsets, the structures offer resonant transitions in the teleco…
View article: A nonlinear metasurface combining telecom-range intersubband transitions\n in GaN/AlN quantum wells with resonant plasmonic antenna arrays
A nonlinear metasurface combining telecom-range intersubband transitions\n in GaN/AlN quantum wells with resonant plasmonic antenna arrays Open
We realize and investigate a nonlinear metasurface taking advantage of intersubband transitions in ultranarrow GaN/AlN multi-quantum well heterostructures. Owing to huge band offsets, the structures offer resonant transitions in the teleco…
View article: Bright Single-Photon Emitters with a CdSe Quantum Dot and Multimode Tapered Nanoantenna for the Visible Spectral Range
Bright Single-Photon Emitters with a CdSe Quantum Dot and Multimode Tapered Nanoantenna for the Visible Spectral Range Open
We report on single photon emitters for the green-yellow spectral range, which comprise a CdSe/ZnSe quantum dot placed inside a semiconductor tapered nanocolumn acting as a multimode nanoantenna. Despite the presence of many optical modes …
View article: Supplementary document for A nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays - 5265255.pdf
Supplementary document for A nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays - 5265255.pdf Open
Time-resolved pump-probe measurements characterizing the ultrafast carrier dynamics of intersubband transitions in GaN/AlN MQWs.
View article: Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates Open
Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurren…
View article: Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View
Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View Open
The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondar…
View article: Ultraviolet Materials and Devices
Ultraviolet Materials and Devices Open
The UV community for the fourth time took part in the International Workshop on Ultraviolet Materials and Devices (IWUMD4), which was organized in September 2019 by the Ioffe Institute, St. Petersburg, Russia. This event, following the suc…
View article: Suppression of Stark effect in ultra-thin stress-free GaN/AlN multiple quantum well structures grown by plasma-assisted molecular beam epitaxy
Suppression of Stark effect in ultra-thin stress-free GaN/AlN multiple quantum well structures grown by plasma-assisted molecular beam epitaxy Open
We report on suppression of the Stark effect in (1.5-2)-monolayer(ML)-thick (GaN/AlN) 100 multiple quantum well (MQW) structures grown on AlN/c-Al 2 O 3 templates by plasma-assisted molecular beam epitaxy. Different stress relaxation mecha…
View article: In situ study of elastic strain relaxation in metamorphic InAs(Sb)/In(Ga,Al)As/GaAs heterostructures by using reflection high energy electron diffraction
In situ study of elastic strain relaxation in metamorphic InAs(Sb)/In(Ga,Al)As/GaAs heterostructures by using reflection high energy electron diffraction Open
We report on a comparative study of the elastic strain relaxation in InAs(Sb)/In(Ga,Al)As heterostructures grown by molecular beam epitaxy on GaAs substrates via InAlAs metamorphic buffer layer (MBL) with and without a highly strained 5 nm…
View article: Multi-Level Transformation Processes: Digital Technologies in the Economy
Multi-Level Transformation Processes: Digital Technologies in the Economy Open
The article is devoted to the study of a relevant scientific and practical problem – multi-level transformation processes in the economy. The purpose of the article is to study theoretical approaches to transformation processes in the repr…
View article: Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy
Structural and Optical Properties of GaSe/GaAs(001) Layers Grown by Molecular Beam Epitaxy Open
This paper reports on molecular beam epitaxy of GaSe 2D-layers on GaAs(001) substrates at growth temperatures of TS ≈ 400-540 • C as well as studies of their structural and optical properties.Transmission electron microscopy and the Raman …
View article: Subduction Zone Effect on the Structure of the Small-Scale Currents at Core-Mantle Boundary
Subduction Zone Effect on the Structure of the Small-Scale Currents at Core-Mantle Boundary Open
The purpose of this work is to compare kinematics of small-scale current vortices located near the core-mantle boundary with high-speed anomalies of seismic wave velocity in the lowest mantle asso-ciated with the subduction zones. The smal…
View article: Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy
Direct observation of spatial distribution of carrier localization sites in ultrathin GaN/AlN quantum wells by spreading resistance microscopy Open
Spreading resistance microscopy (SRM) was used to study nanoscale variations in electronic and structural properties of an ultrathin near-surface GaN/AlN quantum well (QW). In the SRM images of the growth surface of the GaN/AlN QW heterost…
View article: Features of the Formation of Ohmic Contacts to n+-InN
Features of the Formation of Ohmic Contacts to n+-InN Open
We report about a study of the formation and current transport mechanism of ohmic contacts to n+-InN with electron concentrations of 2×1018, 8×1018, and 4×1019 cm−3. Pd/Ti/Au ohmic contacts are formed by the proposed approach of simultaneo…
View article: Applied art studies as a result of the differentiation of modern science of art
Applied art studies as a result of the differentiation of modern science of art Open
The purpose of the work is introduction term “applied art studies” into contemporary Ukrainian cultural discourse. The attempt to describe it’s tasks is made. Methodology of the research consists in the applying methods of formal logic, na…
View article: Молекулярно-пучковая эпитаксия двухмерных слоев GaSe на подложках GaAs(001) и GaAs(112): структурные и оптические свойства
Молекулярно-пучковая эпитаксия двухмерных слоев GaSe на подложках GaAs(001) и GaAs(112): структурные и оптические свойства Open
The results of studies of the structural and optical properties of two-dimensional GaSe layers grown by molecular-beam epitaxy on GaAs(001) and GaAs(112) substrates using a valve cracking cell for the Se source are reported. The influence …
View article: EXPERIENCE OF USING PRACTICE OF LOCAL AUTOMATIZED GEODETIC NETWORKS BASED ON DOMESTIC GNSS RECEIVERS
EXPERIENCE OF USING PRACTICE OF LOCAL AUTOMATIZED GEODETIC NETWORKS BASED ON DOMESTIC GNSS RECEIVERS Open
In article the local automatized geodetic network (MAGS) that provides RTK and post-processed relative positioning for geotechnical monitoring. The net based on using of GNSS receiv-ers and software which made in Russia. The results of pra…
View article: Stress evolution in AlN layers grown on c-Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy at metal-rich conditions
Stress evolution in AlN layers grown on c-Al<sub>2</sub>O<sub>3</sub> by plasma-assisted molecular beam epitaxy at metal-rich conditions Open
Stress generation and relaxation in AlN nucleation and buffer layers grown on c-Al2O3 substrates by plasma-assisted molecular beam epitaxy at low (LT, TS = 780°C) and high (HT, TS = 850°C) substrate temperatures were studied. Oscillation b…
View article: High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on <i>c</i>-Al<sub>2</sub>O<sub>3</sub>
High-efficiency electron-beam-pumped sub-240-nm ultraviolet emitters based on ultra-thin GaN/AlN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy on <i>c</i>-Al<sub>2</sub>O<sub>3</sub> Open
We report the internal structures and emission properties of GaN/AlN single- and multiple-quantum-well (QW) heterostructures with well widths of d w = 1–4 monolayers (MLs), grown by plasma-assisted molecular-beam epitaxy on c-sapphire at m…
View article: New Magnetic Anomaly Map of the Antarctic
New Magnetic Anomaly Map of the Antarctic Open
The second generation Antarctic magnetic anomaly compilation for the region south of 60°S includes some 3.5 million line‐km of aeromagnetic and marine magnetic data that more than doubles the initial map's near‐surface database. For the ne…