Seval Arslan
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View article: Inscanner: Dual-Phase Detection and Classification of Auxiliary Insulation Using YOLOv8 Models
Inscanner: Dual-Phase Detection and Classification of Auxiliary Insulation Using YOLOv8 Models Open
This study proposes a two-phase methodology for detecting and classifying auxiliary insulation in structural components. In the detection phase, a YOLOv8x model is trained on a dataset of complete structural blueprints, each annotated with…
View article: High-efficiency and high-brightness broad area laser diodes with buried implantation current blocking
High-efficiency and high-brightness broad area laser diodes with buried implantation current blocking Open
Buried-regrown-implant-structure (BRIS) technology combines two-step epitaxial regrowth with an intermediate ion implantation step in order to realise a buried current aperture close to the active region of a laser diode. In this paper we …
View article: Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm
Experimental and theoretical studies into longitudinal spatial hole burning as a power limit in high-power diode lasers at 975 nm Open
Spatial-hole-burning as a limit to the continuous-wave (CW) output power of GaAs-based diode lasers is experimentally studied. For 90 μm stripe lasers with 6 mm resonator length and 0.8% front facet reflectivity, spontaneous emission (SE) …
View article: Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers
Carrier density non-pinning at stripe edges and widened lateral far field due to longitudinal temperature variation in broad-area high power diode lasers Open
Broad area lasers operating at high power with improved beam quality are needed in many applications. In typical high-power diode lasers with asymmetric facet coating, it is observed that the carrier density fails to completely pin above t…
View article: Optimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality
Optimizing Vertical and Lateral Waveguides of kW-Class Laser Bars for Higher Peak Power, Efficiency and Lateral Beam Quality Open
GaAs-based, highly-efficient, kW-class, 1-cm laser bars with high peak power Popt and improved beam quality in quasi-continuous-wave mode are presented. The use of an extreme-triple-asymmetric (ETAS) epitaxial layer structure diminishes po…
View article: Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers
Non-uniform longitudinal current density induced power saturation in GaAs-based high power diode lasers Open
The output power of modern 975 nm GaAs-based broad area diode lasers is limited by increasing carrier and photon losses at high bias. We use experiment and one-dimensional calculations on these devices to reveal that higher current densiti…