Shaloo Rakheja
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View article: Effect of the AlGaO Spacer Layer on the Performance of β‐Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors
Effect of the AlGaO Spacer Layer on the Performance of β‐Gallium Oxide Metal–Oxide Semiconductor Field Effect Transistors Open
This study utilizes a metalorganic chemical vapor deposition system to grow a β‐Ga 2 O 3 epitaxial layer on a sapphire substrate and fabricate lateral β‐Ga 2 O 3 metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). To enhance the …
View article: An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs
An Accurate Electrical and Thermal Co-Simulation Framework for Modeling High-Temperature DC and Pulsed I - V Characteristics of GaN HEMTs Open
High-electron mobility transistors (HEMTs) employing AlGaN/GaN heterostructures are suitable for high-power and high-frequency applications. To meet target specifications, GaN HEMTs must be designed and optimized by accurately considering …
View article: Impact of strain on the SOT-driven dynamics of thin film Mn3Sn
Impact of strain on the SOT-driven dynamics of thin film Mn3Sn Open
Mn 3 Sn, a metallic antiferromagnet with an anti-chiral 120° spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst effect, an…
View article: Performance Evaluation of Spintronic-Based Spiking Neural Networks using Parallel Discrete-Event Simulation
Performance Evaluation of Spintronic-Based Spiking Neural Networks using Parallel Discrete-Event Simulation Open
Spintronic devices that use the spin of electrons as the information state variable have the potential to emulate neuro-synaptic dynamics and can be realized within a compact form-factor, while operating at ultra-low energy-delay point. In…
View article: Pulse compression photoconductive semiconductor switches
Pulse compression photoconductive semiconductor switches Open
A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to ge…
View article: Spintronic devices and applications using noncollinear chiral antiferromagnets
Spintronic devices and applications using noncollinear chiral antiferromagnets Open
Antiferromagnetic materials have a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against external magnetic perturbation and rapid magnetization dynamics, as dictated by the geometric mean of…
View article: Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices
Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices Open
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanoseco…
View article: Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices Open
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions …
View article: Impact of strain on the SOT-driven dynamics of thin film Mn$_3$Sn
Impact of strain on the SOT-driven dynamics of thin film Mn$_3$Sn Open
Mn$_3$Sn, a metallic antiferromagnet with an anti-chiral 120$^\circ$ spin structure, generates intriguing magneto-transport signatures such as a large anomalous Hall effect, spin-polarized current with novel symmetries, anomalous Nernst ef…
View article: Modeling and Evaluation of Echo-State Networks Using Spin Torque Nano-Oscillators
Modeling and Evaluation of Echo-State Networks Using Spin Torque Nano-Oscillators Open
An echo state network (ESN), capable of processing time-series data with high accuracy, is designed and benchmarked using spin torque nano-oscillators (STNOs) with easy-plane anisotropy. An ESN belongs to the category of reservoir computer…
View article: 2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices
2D Ambipolar Vertical Transistors as Control-free Reconfigurable Logic Devices Open
As transistor footprint scales down to sub-10 nm regime, the process development for advancing to further technology nodes has encountered slowdowns. Achieving greater functionality within a single chip requires concurrent development at t…
View article: Order parameter dynamics in Mn3Sn driven by DC and pulsed spin–orbit torques
Order parameter dynamics in Mn3Sn driven by DC and pulsed spin–orbit torques Open
We numerically investigate and develop analytic models for both the DC and pulsed spin–orbit-torque (SOT)-driven response of order parameter in single-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral 120° spin structur…
View article: Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO
Low-Thermal-Budget Ferroelectric Field-Effect Transistors Based on CuInP2S6 and InZnO Open
In this paper, we demonstrate low-thermal-budget ferroelectric field-effect transistors (FeFETs) based on two-dimensional ferroelectric CuInP2S6 (CIPS) and oxide semiconductor InZnO (IZO). The CIPS/IZO FeFETs exhibit non-volatile memory wi…
View article: Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing
Content Addressable Memories and Transformable Logic Circuits Based on Ferroelectric Reconfigurable Transistors for In-Memory Computing Open
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
View article: Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques
Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques Open
We numerically investigate and develop analytic models for both the DC and pulsed spin-orbit-torque (SOT)-driven response of order parameter in single-domain Mn$_3$Sn, which is a metallic antiferromagnet with an anti-chiral 120$^\circ$ spi…
View article: A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices Open
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MT…
View article: Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors
Physics-Based Modeling and Validation of 2-D Schottky Barrier Field-Effect Transistors Open
In this work, we describe the charge transport in two-dimensional (2D) Schottky barrier field-effect transistors (SB-FETs) based on the carrier injection at the Schottky contacts. We first develop a numerical model for thermionic and field…
View article: Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors
Observation and Modeling of Near-Bistable Dark-Mode Current-Voltage Characteristics in Semi-Insulating Gallium Arsenide With Implications for Photoconductors Open
In this work, we demonstrate and model the deep-level defect physics of semi-insulating gallium arsenide bulk photoconductive semiconductor switches (PCSS) with gap size of 10 µm and 25 µm in dark-mode operation. Experimental measurements …
View article: A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs
A comparison of a commercial hydrodynamics TCAD solver and Fermi kinetics transport convergence for GaN HEMTs Open
Various simulations of a GaN HEMT are used to study the behaviors of two different energy-transport models: the Fermi kinetics transport model and a hydrodynamics transport model as it is implemented in the device simulator Sentaurus from …
View article: Design considerations for gallium arsenide pulse compression photoconductive switch
Design considerations for gallium arsenide pulse compression photoconductive switch Open
In this paper, we present the physics and design-space exploration of a novel pulse compression photoconductive switch (PCPS) using semi-insulating gallium arsenide (GaAs) operating in the negative differential mobility (NDM) regime of ele…
View article: Spin-Torque-Driven Terahertz Auto-Oscillations in Noncollinear Coplanar Antiferromagnets
Spin-Torque-Driven Terahertz Auto-Oscillations in Noncollinear Coplanar Antiferromagnets Open
We theoretically and numerically study the terahertz auto oscillations in thin-film metallic non-collinear coplanar antiferromagnets (AFMs), such as $\mathrm{Mn_{3}Sn}$ and $\mathrm{Mn_{3}Ir}$, under the effect of anti-damping spin-torque …
View article: Pulse Compression Photoconductive Switching Using Negative Differential Mobility
Pulse Compression Photoconductive Switching Using Negative Differential Mobility Open
This work demonstrates a novel optoelectronic device with the potential for use as a high-frequency, high-power RF source or amplifier. The device is a gallium–arsenide coplanar waveguide with a small gap in the signal trace for optical il…
View article: A Prony-Based Curve-Fitting Method for Characterization of RF Pulses From Optoelectronic Devices
A Prony-Based Curve-Fitting Method for Characterization of RF Pulses From Optoelectronic Devices Open
There has been a boost in optoelectronic device tech- nology that can leverage strengths of both optical and electronic worlds to support high-voltage and high-speed operation. It is critical to characterize the RF performance from the mea…
View article: Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects Open
GaN technology is not only gaining traction in power and RF electronics but is also rapidly expanding into other application areas including digital and quantum computing electronics. This paper provides a glimpse of future GaN device tech…
View article: Spin splitting and spin Hall conductivity in buckled monolayers of group 14: First-principles calculations
Spin splitting and spin Hall conductivity in buckled monolayers of group 14: First-principles calculations Open
Elemental monolayers of the group 14 with a buckled honeycomb structure, namely silicene, germanene, stanene, and plumbene, are known to demonstrate a spin splitting as a result of an electric field parallel to their high symmetry axis whi…
View article: Precessional spin-torque dynamics in biaxial antiferromagnets
Precessional spin-torque dynamics in biaxial antiferromagnets Open
The N\\'eel order of an antiferromagnet subject to a spin torque can undergo\nprecession in a circular orbit about any chosen axis. To orient and stabilize\nthe motion against the effects of magnetic anisotropy, the spin polarization\nshou…