Shaoying Ke
YOU?
Author Swipe
View article: Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer
Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer Open
We present a high-performance Ge/Si PIN photodetector that leverages the advanced Ge/Si hetero-bonding method. The sputtered microcrystalline Ge is utilized as the interlayer, in conjunction with Smart-Cut technology, to fabricate high-qua…
View article: Low voltage-driven, high-performance TiO <sub>2</sub> thin film transistors with MHz switching speed
Low voltage-driven, high-performance TiO <sub>2</sub> thin film transistors with MHz switching speed Open
CMOS-compatible TiO 2 transistors with on–off ratios of 10 7 , a subthreshold swing of ∼150 mV Dec −1 averaged over four orders of magnitude, and excellent gate-pulse switching at 1.0 Hz to 1.0 MHz to be used as logic gates with a voltage …
View article: Feasibility of simultaneous multi-element analysis of quartz sand with impurities by calibration-free laser-induced breakdown spectroscopy and its potential for guiding glass manufacturing
Feasibility of simultaneous multi-element analysis of quartz sand with impurities by calibration-free laser-induced breakdown spectroscopy and its potential for guiding glass manufacturing Open
As the main raw material in glass manufacturing, quartz sand and its elementary contents play an important role in glass quality. As raw quartz sand contains a variety of impurities such as metal oxides, which makes traditional chemical an…
View article: High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer
High-gain bandwidth product of wafer-bonded near-infrared III-V/silicon APD using polycrystalline silicon bonding layer Open
Avalanche photodiode (APD) is a highly sensitive photodetector commonly used in applications, such as optical fiber communication and LIDAR. However, the 7.7% lattice mismatch between InGaAs and Si creates challenges in growing high-qualit…
View article: Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector
Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector Open
Due to the large lattice mismatch between GeSn and Si materials, high-density threading dislocation (TD) forms when GeSn films are grown by epitaxial growth. This leads to the increase of the dark current density (DCD) of the device. The w…
View article: Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering
Effective Strain Relaxation of Gesn Single Crystal with Sn Content of 16.5% on Ge Grown by High-Temperature Sputtering Open
View article: High-Performance Photodetectors Based on the Cspbclbr2 Film Grown by Thermal Vacuum Deposition
High-Performance Photodetectors Based on the Cspbclbr2 Film Grown by Thermal Vacuum Deposition Open
View article: Study on Crystallization Mechanism of GeSn Interlayer for Low Temperature Ge/Si Bonding
Study on Crystallization Mechanism of GeSn Interlayer for Low Temperature Ge/Si Bonding Open
Low temperature bonding technologies is necessary in next-generation photonic integrated circuits, such as flexible optoelectronic devices, low dark current Ge/Si devices and so on. Since Germanium-Tin (GeSn) alloy has lower crystallizatio…
View article: Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO_2 insulator layer
Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO_2 insulator layer Open
The tunneling effect and interface state in the p-Ge/GeO2p-Si structure of a wafer-bonding Ge/Si avalanche photodiode (APD) are investigated. It is found that the thin interfacial GeO2 layer (1-2 nm) formed by the hydrophilic reaction at t…