Shichang Zou
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View article: Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs
Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs Open
In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify t…
View article: A novel high‐precision single‐event transient hardened voltage comparator design
A novel high‐precision single‐event transient hardened voltage comparator design Open
Summary To reduce the impact of the single‐event transient (SET) effect on the high‐precision comparator, based on the common high‐gain pre‐amplification stage structure of the comparator, a new radiation hardened by design (RHBD) method, …
View article: High‐performance and single event double‐upset‐immune latch design
High‐performance and single event double‐upset‐immune latch design Open
This Letter proposes a single event double‐upset (SEDU)‐fully‐tolerant latch, referred to as FBSET, mainly featuring four interlocked branch circuits implemented by stacking three PMOS and one NMOS transistors or three NMOS and one PMOS tr…
View article: Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET
Substrate effect on radiation-induced charge trapping in buried oxide for partially-depleted SOI NMOSFET Open
The total-ionizing-dose response of partially-depleted silicon-on-insulator devices with or without grounded substrate under different irradiation bias is investigated. Compared with devices with grounded substrate, the devices with floati…
View article: A charge pump system with new regulation and clocking scheme
A charge pump system with new regulation and clocking scheme Open
A novel charge pump system with new regulation and clock generating techniques is proposed and verified in a 0.13 µm CMOS process. Rather than generating the reference voltage by band-gap reference (BGR) and the detected voltage by high vo…
View article: Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer
Radiation-enhanced channel length modulation induced by trapped charges in buried oxide layer Open
By skillfully applying the voltage bias, we firstly observed radiation-enhanced channel length modulation (CLM) of main transistor in 130 nm partially-depleted SOI nMOSFETs. And we found the radiation-enhanced CLM under Pass-Gate bias is m…
View article: A Novel High-Performance Low-Cost Double-Upset Tolerant Latch Design
A Novel High-Performance Low-Cost Double-Upset Tolerant Latch Design Open
Single event double upsets (SEDUs) caused by charge sharing have been an important contributor to the soft error in integrated circuits. Most of the up-to-date double-upset (DU) tolerant latches suffer from high costs in terms of delay, po…
View article: Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide
Total dose radiation induced changes of the floating body effects in the partially depleted SOI NMOS with ultrathin gate oxide Open
In this paper, the impacts of total dose radiation on the low-frequency noise and gate induced floating body effects (GIFBEs) for the 130 nm partially depleted silicon-on-insulator N-type metal-oxide semiconductors transistor with an ultra…
View article: A novel highly reliable and low-power radiation hardened SRAM bit-cell design
A novel highly reliable and low-power radiation hardened SRAM bit-cell design Open
In this paper, an improved SEU hardened SRAM bit-cell, based on the SEU physics mechanism and reasonable circuit-design, is proposed. The proposed SRAM cell can offer differential read operation for robust sensing. By using 90 nm standard …
View article: A novel SEU tolerant memory cell for space applications
A novel SEU tolerant memory cell for space applications Open
In this paper, an improved design of a radiation hardened memory cell (RHMC), based on the SEU (single event upset) physics mechanism and reasonable transistor size, is proposed.The memory cell can enhance the reliability for space radiati…
View article: A novel self-recoverable and triple nodes upset resilience DICE latch
A novel self-recoverable and triple nodes upset resilience DICE latch Open
With the CMOS technology scaling down, the normal latch is more susceptible to soft errors caused by radiation particles. In this paper, we proposed a low-power and highly reliable radiation hardened latch to enhance the single event upset…
View article: Area-efficient charge pump with local boost technique for embedded flash memory
Area-efficient charge pump with local boost technique for embedded flash memory Open
An area-efficient charge pump (AE-CP) used for embedded flash memory is proposed with the combination of an area-efficient voltage doubler (AE-VD). An optimized strategy for AE-CP with local boost technique is discussed to maximize output …
View article: Routing light with ultrathin nanostructures beyond the diffraction limit
Routing light with ultrathin nanostructures beyond the diffraction limit Open
An open nanostructure consisting of a periodic chain of subwavelength-nanoparticles for compressing and routing light beyond the diffraction limit is proposed. The open nanostructure is ultrathin and compact, with a size much smaller than …