Chih‐Cheng Shih
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View article: Pyrene-Linked Covalent Organic Polymer/Single-Walled Carbon Nanotubes Hybrids as High-Performance Electrodes for Supercapacitive Energy Storage
Pyrene-Linked Covalent Organic Polymer/Single-Walled Carbon Nanotubes Hybrids as High-Performance Electrodes for Supercapacitive Energy Storage Open
View article: Comparison of physical electrical conductivity and acupuncture de-qi sensation between stainless steel needling and supercritical fluid-treated needling
Comparison of physical electrical conductivity and acupuncture de-qi sensation between stainless steel needling and supercritical fluid-treated needling Open
View article: Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory
Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory Open
In this study, an Ag-Cu alloy was chosen as the electrode in conductive bridging random access memory (CBRAM), with results indicating a significant decrease in forming voltage. In addition, resistive switching characteristics as well as a…
View article: Enhancing the Electrical Uniformity and Reliability of the HfO<sub>2</sub>-Based RRAM Using High-Permittivity Ta<sub>2</sub>O<sub>5</sub> Side Wall
Enhancing the Electrical Uniformity and Reliability of the HfO<sub>2</sub>-Based RRAM Using High-Permittivity Ta<sub>2</sub>O<sub>5</sub> Side Wall Open
In conventional HfO2-based resistive random access memory (RRAM), SiO2 is usually adopted as side wall spacer (low-k spacer) to define the device feature size. It is found that the forming voltage of the conventional …
View article: Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment Open
A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and …
View article: Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐<i>k</i> Spacer Structure (Adv. Electron. Mater. 9/2017)
Resistive Random Access Memory: Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High‐<i>k</i> Spacer Structure (Adv. Electron. Mater. 9/2017) Open
A rising forming voltage issue with scaling-down resistive random access memory (RRAM) device cells is successfully solved by introducing new high-permittivity (high-k) material as the side-wall spacer structure. As reported by Ting-Chang …
View article: Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications
Mechanisms of Low-Temperature Nitridation Technology on a TaN Thin Film Resistor for Temperature Sensor Applications Open
View article: Physical and chemical mechanisms in oxide-based resistance random access memory
Physical and chemical mechanisms in oxide-based resistance random access memory Open
View article: Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory Open
In this study of resistance random access memory in a resistive switching film, the breakdown degree was controlled by varying forming current compliance. A SiOx layer was introduced into the ZnO layer of the structure to induce both typic…
View article: Physical and chemical mechanisms in oxide-based resistance random access memory
Physical and chemical mechanisms in oxide-based resistance random access memory Open