Shanshan Hu
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View article: Study on the martensitic transformation mechanism of binder phase in WC-10Co nanocrystalline cemented carbides
Study on the martensitic transformation mechanism of binder phase in WC-10Co nanocrystalline cemented carbides Open
View article: Dynamic holographic display with addressable on-chip metasurface network based on lithium niobate photonics
Dynamic holographic display with addressable on-chip metasurface network based on lithium niobate photonics Open
View article: Influence of portal excavation of shallow-buried bias tunnel on stability of soil‒rock bedding slope: a case study of Moziping tunnel
Influence of portal excavation of shallow-buried bias tunnel on stability of soil‒rock bedding slope: a case study of Moziping tunnel Open
The excavation of tunnel portals in shallowly buried bias tunnels in mountainous areas is highly prone to causing instability of the soil‒rock bedding slopes at portals, which threatens project safety. This paper uses the Moziping tunnel o…
View article: The Influence of Transmission Corridor Tower Grounding Electrode Shapes on the Impulse Interference of Adjacent Secondary Cables
The Influence of Transmission Corridor Tower Grounding Electrode Shapes on the Impulse Interference of Adjacent Secondary Cables Open
With urban land resources becoming increasingly scarce, transmission corridors are often situated close to substations and buildings. When a transmission tower is struck by lightning, the resulting transient current enters the ground throu…
View article: Stacking Fault Analysis for the Early-Stages of PVT Growth of 4H-SiC Crystals
Stacking Fault Analysis for the Early-Stages of PVT Growth of 4H-SiC Crystals Open
View article: Synergistic hydrolysis, coordination and hydrogen bond interactions in NIPS for underwater superoleophobic mesh-based oil/water separation
Synergistic hydrolysis, coordination and hydrogen bond interactions in NIPS for underwater superoleophobic mesh-based oil/water separation Open
One-step preparation of wire-mesh oil–water separation membranes with high flux and oil foulant resistance.
View article: Solid-state chemical reaction-driven BiOIO <sub>3</sub> catalyst for boosting piezocatalytic activation of peroxymonosulfate toward pollutant degradation
Solid-state chemical reaction-driven BiOIO <sub>3</sub> catalyst for boosting piezocatalytic activation of peroxymonosulfate toward pollutant degradation Open
The piezocatalytic activation of peroxymonosulfate by BiOIO 3 demonstrated exceptional catalytic performance in the degradation of pollutants.
View article: Characterization of Growth Sectors in Gallium Nitride Substrate Wafers
Characterization of Growth Sectors in Gallium Nitride Substrate Wafers Open
During crystal growth processes, growth sectors are formed due to growth along different crystallographic directions. Although the crystal structure in the different growth sectors is unchanged, strain induced topography contrast is observ…
View article: Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography
Investigating Dislocation Arrays Induced by Seed Scratches during PVT 4H-SiC Crystal Growth Using Synchrotron X-Ray Topography Open
The influence of seed preparation on crystal defect generation is studied by investigating the effect of damage from surface scratches not completely removed during polishing on the seed crystal on the nucleation and evolution of dislocati…
View article: Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures
Analysis of Lattice Damage in 4H-SiC Epiwafers Implanted with High Energy Al Ions at Elevated Temperatures Open
4H-SiC wafers with 12 µm epilayers were blanket implanted to a depth of 12 µm with 5 x 10 16 cm -3 Al ions via Tandem Van de Graaff accelerator located at Brookhaven National Laboratory with energy range of 13.8 to 65.7 MeV at room tempera…
View article: Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals
Analysis of Defect Structures during the Early-Stages of PVT Growth of 4H-SiC Crystals Open
To better understand the effects of various growth parameters during the early-stages of PVT growth of 4H-SiC on resulting defect structures, multiple short duration growths have been carried out under varying conditions of seed quality, n…
View article: Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations
Analysis of dislocation configurations in SiC crystals through X-ray topography aided by ray tracing simulations Open
View article: Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals
Investigation of defect formation at the early stage of PVT-grown 4H-SiC crystals Open
View article: Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography
Analysis of strain in ion implanted 4H-SiC by fringes observed in synchrotron X-ray topography Open
View article: Deep learning enhanced achromatic imaging with a singlet flat lens
Deep learning enhanced achromatic imaging with a singlet flat lens Open
Correction of chromatic aberration is an important issue in color imaging and display. However, realizing broadband achromatic imaging by a singlet lens with high comprehensive performance still remains challenging, though many achromatic …
View article: Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers
Effective Penetration Depth Investigation for Frank Type Dislocation (Deflected TSDs/TMDs) on Grazing Incidence Synchrotron X-Ray Topographs of 4H-SiC Wafers Open
In 4H-SiC crystals, Frank type dislocations are created through the deflection of threading screw/mixed dislocations onto the basal plane. Grazing-incidence X-ray topographs are often used to evaluate the density of such dislocations and a…
View article: Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography
Analysis of Basal Plane Dislocation Motion Induced by p+ Ion Implantation Using Synchrotron X-Ray Topography Open
Multiple PIN diodes with junction termination extension (JTE) were fabricated on 4H-SiC wafers with 10 μm thick epilayers by ion implantation with various dosages of Al ions at room temperature (RT) and high temperature (600 °C). The subse…
View article: Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography
Analysis of Strain in Ion Implanted 4H-SiC by Fringes Observed in Synchrotron X-Ray Topography Open
A novel high energy implantation system has been successfully developed to fabricate 4H-SiC superjunction devices for medium and high voltages via implantation of dopant atoms with multi-energy ranging from 13 to 66 MeV to depths up to 12u…
View article: Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide
Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide Open
A highly efficient, high-voltage power switching technology, the Optical Transconductance Varistor (OTV) is being developed based on the photoconductive property of 6H-SiC. The behavior of the dislocations in 6H-SiC under the application o…
View article: Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method
Characterization of Prismatic Slip in SiC Crystals by Chemical Etching Method Open
In 4H-silicon carbide crystals, basal plane slip is the predominant deformation mechanism. However, prismatic slip is often observed in single crystals grown by the physical vapor transport method as the diameter expands to 6 inches or lar…
View article: Venoarterial extracorporeal membrane oxygenation for refractory cardiogenic shock induced by adrenal lesions: a case report and review of the literature
Venoarterial extracorporeal membrane oxygenation for refractory cardiogenic shock induced by adrenal lesions: a case report and review of the literature Open
View article: Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode
Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode Open
A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant a…
View article: Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms
Investigation of Lattice Strain in High Energy Implanted 4H-SiC Wafers by Al or N Atoms Open
4H-SiC wafers with 12 um epilayer were implanted at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy from 13 MeV up to 66 MeV. Lattice strains introduced by the implantation process were characterized…
View article: Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers
Ray-Tracing Simulation Analysis of Effective Penetration Depths on Grazing Incidence Synchrotron X-Ray Topographic Images of Basal Plane Dislocations in 4H-SiC Wafers Open
Understanding the depth from which contrast from dislocations is still discernible (the effective penetration depth of the X-rays) in grazing-incidence synchrotron monochromatic beam X-ray topography is of great interest as it enables thre…
View article: Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography
Dislocation Contrast Analysis in Weak Beam Synchrotron X-Ray Topography Open
Synchrotron monochromatic beam X-ray topography has been widely applied to characterize structural defects in SiC crystals. Using ray tracing simulations, the dislocation contrast in X-ray topography under strong diffraction conditions (di…
View article: Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials
Synchrotron X-Ray Topography Characterization of Power Electronic GaN Materials Open
Synchrotron X-ray topography techniques are used to characterize the microstructures in gallium nitride materials being developed for selective area doping for power electronic applications. Bulk substrates grown by different methods, epit…
View article: Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography
Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography Open
View article: CCDC 2119939: Experimental Crystal Structure Determination
CCDC 2119939: Experimental Crystal Structure Determination Open
View article: Characterization of prismatic slip in PVT-grown AlN crystals
Characterization of prismatic slip in PVT-grown AlN crystals Open
View article: Feasibility-Based Design Model For Road Vertical Alignment
Feasibility-Based Design Model For Road Vertical Alignment Open
Road vertical alignment design is a multi-objective design problem that needs to consider multiple constraints. Intelligent design based on optimization algorithms cannot wholly solve problems, such as multi-objective, uncertainty, and con…