Silas A. Jentsch
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View article: Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy
Cubic InGaN for red emission: Improved phase stability and emission properties by metal-modulated epitaxy Open
Cubic III-nitrides are a promising alternative to conventional wurtzite-based InGaN systems for visible light emission, particularly in the red spectral region, due to the absence of internal polarization fields. We present a systematic st…
View article: AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy
AlScN Pseudosubstrates for High Indium Content InGaN Alloy Epitaxy Open
Nitride-based semiconductors are vital for efficient optoelectronic devices in the ultraviolet to green spectral range. However, producing red-emitting InGaN micro-LEDs is challenging due to lattice mismatch with traditional GaN substrates…
View article: Bandgaps in cubic InGaN for the entire composition range including many-body effects
Bandgaps in cubic InGaN for the entire composition range including many-body effects Open
We present our investigation of cubic zinc blende InGaN thin films grown by plasma-assisted molecular beam epitaxy on c-GaN/c-AlN/3C-SiC/Si substrates oriented in the (001) orientation. Through spectroscopic ellipsometry analyses spanning …
View article: Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy
Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy Open
Alternating metal-modulated molecular beam epitaxy enables the growth of both self-assembled c-InGaN/GaN quantum wells and fully alloyed c-InGaN layers. In situ reflection high-energy electron diffraction (RHEED) analysis coupled with ex s…
View article: Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
Metal-Modulated Growth of Cubic, Red-Emitting InGaN Layers and Self-Assembled InGaN/GaN Quantum Wells by Molecular Beam Epitaxy Open
Cubic InGaN alloys are a promising candidate material for next-generation optoelectronic applications as they lack internal fields and promise to cover large parts of the electromagnetic spectrum from the deep UV toward the mid-infrared. T…