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View article: Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases
Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases Open
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition. This framework for epitaxy at the atomic…
View article: Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) <sub> <i>m</i> </sub> (Sb <sub>2</sub> Te <sub>3</sub> ) <sub> <i>n</i> </sub>
Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) <sub> <i>m</i> </sub> (Sb <sub>2</sub> Te <sub>3</sub> ) <sub> <i>n</i> </sub> Open
In this work, a study of the structural and electronic properties of epitaxial GeTe-rich (GeTe) m (Sb2Te3) n alloys grown on Si substrate by molecular beam epitaxy is presented, wit…
View article: Understanding the Growth and Properties of Sputter‐Deposited Phase‐Change Superlattice Films
Understanding the Growth and Properties of Sputter‐Deposited Phase‐Change Superlattice Films Open
Highly textured chalcogenide films have recently gained significant interest for phase‐change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as Ge 2…
View article: Understanding the Growth and Properties of Sputter-Deposited Phase-Change Superlattice Films
Understanding the Growth and Properties of Sputter-Deposited Phase-Change Superlattice Films Open
Highly textured chalcogenide films have recently gained significant interest for phase-change memory applications. Several reports have highlighted that programming efficiency improves in devices featuring superlattice stacks, such as Ge2S…
View article: Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics
Ge Enrichment of Ge–Sb–Te Alloys as Keystone of Flexible Edge Electronics Open
Edge computing architectures are intended to store and process data nearby the sensor, while ensuring fast and safe data processing, low power consumption and cost minimization. The stability, mechanical flexibility, huge computational and…
View article: Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy
Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy Open
In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic prope…
View article: Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys Open
In this study, we present a full characterization of the electronic properties of phase change material (PCM) double-layered heterostructures deposited on silicon substrates. Thin films of amorphous Ge-rich Ge-Sb-Te (GGST) alloys were grow…