Sinuo Zhang
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View article: X-ray irradiation studies on the Monopix DMAPS in 150 nm and 180 nm
X-ray irradiation studies on the Monopix DMAPS in 150 nm and 180 nm Open
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View article: X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm
X-ray Irradiation Studies on the Monopix DMAPS in 150$\,$nm and 180$\,$nm Open
Monolithic active pixel sensors with depleted substrates present a promising option for pixel detectors in high-radiation environments. High-resistivity silicon substrates and high bias voltage capabilities in commercial CMOS technologies …
View article: Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor
Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor Open
The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resolution -- key requirements for future high-energy physics ex…
View article: RD50-MPW4: a thin backside-biased High Voltage CMOS pixel chip for high radiation tolerance
RD50-MPW4: a thin backside-biased High Voltage CMOS pixel chip for high radiation tolerance Open
The RD50-MPW prototypes are High Voltage-CMOS (HV-CMOS) pixel chips in the 150 nm technology from LFoundry S.r.l. aimed at developing monolithic silicon sensors with excellent radiation tolerance, fast timing resolution and high granularit…
View article: Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS)
Recent results and perspectives of the Monopix Depleted Monolithic Active Pixel Sensors (DMAPS) Open
The integration of readout electronics and sensors into a single entity of silicon in monolithic pixel detectors lowers the material budget while simplifying the production procedure compared to the conventional hybrid pixel detector conce…
View article: Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS
Improvement in the Design and Performance of the Monopix2 Reticle-Scale DMAPS Open
An overview of the design and latest test results of unirradiated Monopix2 chips are presented. Their front-end performance was quantified according to their response to injected test pulses or radioactive sources. Moreover, a successfully…
View article: RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance
RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance Open
A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 CMOS working group for potential use in future high luminosity experiments. The aim is to further improve the performance of HV…
View article: Breakdown performance of guard ring designs for pixel detectors in 150 nm CMOS technology
Breakdown performance of guard ring designs for pixel detectors in 150 nm CMOS technology Open
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operat…
View article: Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology Open
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting f…
View article: Test-beam performance of proton-irradiated, large-scale depleted monolithic active pixel sensors in 150 nm CMOS technology
Test-beam performance of proton-irradiated, large-scale depleted monolithic active pixel sensors in 150 nm CMOS technology Open
<p>The increasing availability of high-resistivity substrates and large biasing voltage capabilities in<br>commercial CMOS processes encourage the use of depleted monolithic activate pixel sensors<br>(DMAPS) in high-energ…
View article: Breakdown Performance of Guard Ring Designs for Pixel Detectors in $150~\mathrm{nm}$ CMOS Technology
Breakdown Performance of Guard Ring Designs for Pixel Detectors in $150~\mathrm{nm}$ CMOS Technology Open
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operat…
View article: Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies
Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies Open
The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to…
View article: Improving the Spatial Resolution of Silicon Pixel Detectors through Sub-pixel Cross-coupling
Improving the Spatial Resolution of Silicon Pixel Detectors through Sub-pixel Cross-coupling Open
We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmente…