Shu Yang
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View article: [MYD88(WT)CXCR4(MUT) Waldenstrom macroglobulinemia: a case report].
[MYD88(WT)CXCR4(MUT) Waldenstrom macroglobulinemia: a case report]. Open
View article: Correction to: Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique
Correction to: Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique Open
View article: Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique
Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique Open
View article: The 2018 GaN power electronics roadmap
The 2018 GaN power electronics roadmap Open
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of inve…
View article: CCDC 1579357: Experimental Crystal Structure Determination
CCDC 1579357: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …
View article: CCDC 1579356: Experimental Crystal Structure Determination
CCDC 1579356: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …
View article: Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure
Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure Open
Gallium Nitride on Silicon (GaN-on-Si) devices feature a relatively thick epi buffer layer to release the stress related to the lattice constant mismatch between GaN and Si. The buffer layer is formed by several AlGaN-based transition laye…
View article: THERMODYNAMIC ANALYSIS OF INTERFACIAL REACTION SiN SiC/Mg MATRIX COMPOSITES
THERMODYNAMIC ANALYSIS OF INTERFACIAL REACTION SiN SiC/Mg MATRIX COMPOSITES Open
Gibbs free energy of chemical reactions between SiC particles and the Mg matrix at the different temperature has been calculated based on the Gibbs-Helmholtz equation and thermodynamic equilibrium of chemical reactions. The thermodynamic s…
View article: Device physics towards high performance GaN-based power electronics
Device physics towards high performance GaN-based power electronics Open
氮化鎵(GaN)功率電子器件具有高擊穿電壓、高工作頻率、高電流輸出能力以及耐高溫等優點,有望成為下一代高效電源管理系統芯片的最佳候選之一.本文從界面態起源、極化能帶工程以及可靠性機理等角度分析了GaN基功率電子器件所面臨的器件物理挑戰,包括柵極閾值不穩定性、高壓動態導通電阻退化、高閾值柵技術和柵介質長期可靠性等關鍵科學問題和技術瓶頸.分析指出(Al)GaN表面的無序氧化可能是GaN基器件表/界面態的主要來源,并有針對性地介紹了界面氮化插入層、極性等離子增強原子層沉積AlN薄…
View article: CCDC 1431906: Experimental Crystal Structure Determination
CCDC 1431906: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …
View article: CCDC 1431905: Experimental Crystal Structure Determination
CCDC 1431905: Experimental Crystal Structure Determination Open
An entry from the Cambridge Structural Database, the world’s repository for small molecule crystal structures. The entry contains experimental data from a crystal diffraction study. The deposited dataset for this entry is freely available …