Samaresh Das
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View article: MBE grown tri-layer 2H-MoTe2 quantum wells coupled with WSe2 carrier reservoir for resonant tunneling device applications
MBE grown tri-layer 2H-MoTe2 quantum wells coupled with WSe2 carrier reservoir for resonant tunneling device applications Open
In this work, we report the wafer scale growth of high-quality, ultra-thin (3L) MoTe2 quantum wells using molecular beam epitaxy on a HfO2/WSe2 heterostructure. The structural and morphological quality of the 2H-MoTe2 was confirmed via in …
View article: Engineering 2D Van der Waals Electrode via MBE Grown Weyl Semimetal 1T-WTe2 for Enhanced Photodetection in InSe
Engineering 2D Van der Waals Electrode via MBE Grown Weyl Semimetal 1T-WTe2 for Enhanced Photodetection in InSe Open
Achieving low contact resistance in advanced quantum electronic devices remains a critical challenge. With the growing demand for faster and energy-efficient devices, 2D contact engineering offers a promising solution. Beyond graphene, 1T-…
View article: Optically Pumped Ultrafast and Broadband Terahertz Modulation with Scalable Molecular Beam Epitaxy Grown MoTe <sub>2</sub> /Si Heterostructures
Optically Pumped Ultrafast and Broadband Terahertz Modulation with Scalable Molecular Beam Epitaxy Grown MoTe <sub>2</sub> /Si Heterostructures Open
Despite advancements in terahertz (THz) modulators, achieving a balance between large modulation depth (MD) and fast modulation speed in scalable devices remains a significant challenge. Optically pumped THz modulators with high MD, broad …
View article: MoSe<sub>2</sub>/P3HT Hybrid Heterostructure Field‐Effect‐Transistor for Photodetection
MoSe<sub>2</sub>/P3HT Hybrid Heterostructure Field‐Effect‐Transistor for Photodetection Open
In recent years, there has been a surge of interest in organic–inorganic hybrid heterostructures for optoelectronic devices due to their unparalleled advantages over all organic or all inorganic heterostructures. Despite substantial resear…
View article: Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration
Growth of Large Area WSe2 and Observation of Photogenerated Inversion Layer in DMOS Configuration Open
Here, we report the full-fledged journey towards the material synthesis and characterization of few-layered/thin WSe$_2$ using sputtered W-films on SiO$_2$/Si substrates followed by electrical studies under dark and illumination conditions…
View article: Optically Pumped Terahertz Amplitude Modulation in Type-II Ge QD/Si heterostructures grown via Molecular Beam Epitaxy
Optically Pumped Terahertz Amplitude Modulation in Type-II Ge QD/Si heterostructures grown via Molecular Beam Epitaxy Open
This article exploits group-IV germanium (Ge) quantum dots (QDs) on Silicon-on-Insulator (SOI) grown by molecular beam epitaxy (MBE) in order to explore its optical behaviour in the Terahertz (THz) regime. In this work, Ge QDs, pumped by a…
View article: Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET
Observation of room temperature gate tunable quantum confinement effect in photodoped junctionless MOSFET Open
In the pursuit of room temperature quantum hardware, our study introduces a gate voltage tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate voltage alters the parabolic potential well of the tri-gat…
View article: Spike-Afferent Visual Optoelectronic Nerve (SAVON) for Retinomorphic Sensing Applications
Spike-Afferent Visual Optoelectronic Nerve (SAVON) for Retinomorphic Sensing Applications Open
In this paper, we propose a 2D-material based Spike-Afferent Visual Optoelectronic Nerve (SAVON) circuit, emulating integrated photoreceptive and spike encoding properties of the biological counterpart. To demonstrate the photoreceptive be…
View article: Role of morphology and composition in the transport properties of highly conducting CVD grown PtTe<sub>x</sub>
Role of morphology and composition in the transport properties of highly conducting CVD grown PtTe<sub>x</sub> Open
Platinum telluride (PtTe x ), a metallic noble transition-metal dichalcogenide, has emerged as a central candidate for magnetic and optoelectronic applications. Recently, PtTe x has drawn great attention because of its large positive magne…
View article: High‐Performance Air‐Stable 2D‐WSe<sub>2</sub>/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection
High‐Performance Air‐Stable 2D‐WSe<sub>2</sub>/P3HT Based Inorganic–Organic Hybrid Photodetector with Broadband Visible to Near‐IR Light Detection Open
Photodetectors that can achieve high‐speed photoresponse and high responsivity with broadband detection are essential for bio‐health monitoring, imaging, chemical sensing, and many other applications. Herein a high‐performance inorganic–or…
View article: Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructures
Magnetic Proximity induced efficient charge-to-spin conversion in large area PtSe$_{2}$/Ni$_{80}$Fe$_{20}$ heterostructures Open
As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe$_2$, a transition-metal dichalcogenide, is a promising material for several applications from optoelectric to sensors. However, its potential for…
View article: Large Spin-To-Charge Conversion at the Two-Dimensional Interface of Transition-Metal Dichalcogenides and Permalloy
Large Spin-To-Charge Conversion at the Two-Dimensional Interface of Transition-Metal Dichalcogenides and Permalloy Open
Spin-to-charge conversion is an essential requirement for the implementation of spintronic devices. Recently, monolayers (MLs) of semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable interest for spin-to-charg…
View article: Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Ge–Ge0.92Sn0.08 core–shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication Open
Recent development on Ge1−xSnx nanowires with high Sn content, beyond its solid solubility limit, makes them attractive for all group-IV Si-integrated infrared photonics at the nanoscale. Herein, we report a chemical vapor deposition-grown…
View article: Review of recent progress, challenges, and prospects of 2D materials-based short wavelength infrared photodetectors
Review of recent progress, challenges, and prospects of 2D materials-based short wavelength infrared photodetectors Open
The interest in 2D layered materials based short wavelength infrared (SWIR) photodetectors (PDs) has escalated over the years with the introduction of new 2D materials showing intriguing photoresponse characteristics in the IR region. Two-…
View article: Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared\n photodetector with superior characteristics for on-chip optical communication
Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared\n photodetector with superior characteristics for on-chip optical communication Open
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond\nits solid solubility limit, make them attractive for all group-IV Si-integrated\ninfrared photonics at nanoscale. Herein, we report a chemical vapour\ndepositio…
View article: Bilayer MoS<sub>2</sub> on silicon for higher terahertz amplitude modulation
Bilayer MoS<sub>2</sub> on silicon for higher terahertz amplitude modulation Open
The terahertz (THz) amplitude modulation has been experimentally demonstrated by employing bilayer molybdenum disulfide (MoS 2 ) on high-resistivity silicon (Si). The Raman spectroscopy and x-ray photoelectron spectra confirm the formation…