Si‐Young Bae
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View article: Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy
Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy Open
The Sn-doped β-Ga2O3 films were fabricated on n-type 4H-SiC substrates using Mist-chemical vapor deposition with different [Sn]/[Ga] ratios of 0%, 3%, 5%, and 10%. For device fabrication, Ni Schottky contacts were deposited on the Ga2O3 ep…
View article: Gallium oxide–metal interfaces: insights from density functional theory and photodetection performance evaluation
Gallium oxide–metal interfaces: insights from density functional theory and photodetection performance evaluation Open
Gallium oxide (Ga 2 O 3 ), a wide bandgap semiconductor of the fourth generation, shows great potential for advanced optoelectronic applications. While β- Ga 2 O 3 -based photodetectors (PDs) have been extensively studied, research on α- G…
View article: Pre-Melting-Assisted Impurity Control of β-Ga2O3 Single Crystals in Edge-Defined Film-Fed Growth
Pre-Melting-Assisted Impurity Control of β-Ga2O3 Single Crystals in Edge-Defined Film-Fed Growth Open
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth me…
View article: Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients
Growths of SiC Single Crystals Using the Physical Vapor Transport Method with Crushed CVD-SiC Blocks Under High Vertical Temperature Gradients Open
A recent study reported the rapid growth of SiC single crystals of ~1.5 mm/h using high-purity SiC sources obtained by recycling CVD-SiC blocks used as materials in semiconductor processes. This method has gained attention as a way to impr…
View article: On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing
On the structural and bandgap properties of mist-CVD-grown κ-Ga2O3 post continuous temperature annealing Open
We investigate the continuous annealing of orthorhombic κ-Ga2O3 films on AlN/c-plane sapphire templates grown by Mist Chemical Vapor Deposition (mist-CVD) using in situ high-temperature x-ray diffraction (HT-XRD). Increasing the annealing …
View article: Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers
Controlled Crystallinity of a Sn-Doped α-Ga2O3 Epilayer Using Rapidly Annealed Double Buffer Layers Open
Double buffer layers composed of (AlxGa1−x)2O3/Ga2O3 structures were employed to grow a Sn-doped α-Ga2O3 epitaxial thin film on a sapphire substrate using mist chemical vapor deposition. The insertion of double buffer layers improved the c…
View article: Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method
Influence of Active Afterheater in the Crystal Growth of Gallium Oxide via Edge-Defined Film-Fed Growing Method Open
In this study, we explored the effect of an active afterheater on the growth of gallium oxide single crystals using the EFG method. We analyzed the temperature distribution of the crystal under the growing process through multiphysics simu…
View article: Growth of (100) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystal by controlling the capillary behaviors in EFG system
Growth of (100) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> single crystal by controlling the capillary behaviors in EFG system Open
In this study, a numerical simulation of edge-defined film-fed growth (EFG) was performed to determine the appropriate capillary conditions for Ga 2 O 3 melt. Meniscus and capillary rise were significantly influenced by the design of the d…
View article: Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition
Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition Open
This study examined the microstructural gradation in Sn-doped, n-type Ga2O3 epitaxial layers grown on a two-inch sapphire substrate using horizontal hot-wall mist chemical vapor deposition (mist CVD). The results revealed that, compared to…
View article: Toward Large-Scale Ga<sub>2</sub>O<sub>3</sub> Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers
Toward Large-Scale Ga<sub>2</sub>O<sub>3</sub> Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers Open
Epitaxial growth using graphene (GR), weakly bonded by van der Waals force, is a subject of interest for fabricating technologically important semiconductor membranes. Such membranes can potentially offer effective cooling and dimensional …
View article: The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation
The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation Open
A challenging approach, but one providing a key solution to material growth, remote epitaxy (RE)—a novel concept related to van der Waals epitaxy (vdWE)—requires the stability of a two-dimensional (2-D) material.
View article: Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation
Improvement of SiC Crystal Growth Rate and Uniformity via Top-Seeded Solution Growth under External Static Magnetic Field: A Numerical Investigation Open
Silicon carbide (SiC) is an ideal material for high-power and high-performance electronic applications. Top-seeded solution growth (TSSG) is considered as a potential method for bulk growth of high-quality SiC single crystals from the liqu…
View article: Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method
Effect of Hot-zone Aperture on the Growth Behavior of SiC Single Crystal Produced via Top-seeded Solution Growth Method Open
The top-seeded solution growth (TSSG) method is an effective approach for the growth of high-quality SiC single crystals. In this method, the temperature gradient in the melt is the key factor determining the crystal growth rate and crysta…
View article: Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals
Flow modification enhancing the growth rate in top seeded solution growth of SiC crystals Open
Based on the verified multiphysics simulation, a model describing C transport contributing to crystal growth was suggested. Based on the further understanding of C transport, the growth rate was enhanced by adopting a flow modifier in the …
View article: Understanding Thickness Uniformity of Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Mist Chemical Vapor Deposition
Understanding Thickness Uniformity of Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Mist Chemical Vapor Deposition Open
α–Ga2O3 thin films were grown on a c–plane sapphire substrate by mist chemical vapor deposition in a horizontal furnace. The microstructure of the α–Ga2O3 grown layers was confirmed by X-ray diffraction. The effects of the temperature dist…
View article: Growth of 2-Inch α-Ga<sub>2</sub>O<sub>3</sub> Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition
Growth of 2-Inch α-Ga<sub>2</sub>O<sub>3</sub> Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition Open
The effectiveness of rear-flow-controlled mist chemical vapor deposition (mist CVD) for the growth of 2-inch α-Ga2O3 epilayers was studied. The numerical simulation indicated that the low velocity of the flow is appropriate for inducing an…
View article: Reduction of Residual Impurities in Homoepitaxial <i>m</i>‐Plane GaN by Using N<sub>2</sub> Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018)
Reduction of Residual Impurities in Homoepitaxial <i>m</i>‐Plane GaN by Using N<sub>2</sub> Carrier Gas in Metalorganic Vapor Phase Epitaxy (Phys. Status Solidi RRL 8/2018) Open
Non-polar (m-plane) gallium nitride (GaN) materials are, unlike their polar (c-plane) counterparts, free of polarizationinduced charges which make them very promising candidates for the development of high-performance electronic devices in…
View article: Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Open
We report on the thorough investigation of light emitting diodes (LEDs) made of core-shell nanorods (NRs) with InGaN/GaN quantum wells (QWs) in the outer shell, which are grown on patterned substrates by metal-organic vapor phase epitaxy. …