Sofie S. T. Vandenbroucke
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View article: Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices
Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices Open
In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using pattern…
View article: Optimization of Non-alloyed Backside Ohmic Contacts to N-face GaN for Fully Vertical GaN-on-Silicon Based Power Devices
Optimization of Non-alloyed Backside Ohmic Contacts to N-face GaN for Fully Vertical GaN-on-Silicon Based Power Devices Open
In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+ doped GaN face backside layer. This evaluation is made possible by using pattern…
View article: Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN
Investigation of atomic layer deposition methods of Al2O3 on <i>n</i>-GaN Open
In this work, three atomic layer deposition (ALD) approaches are used to deposit an Al2O3 gate insulator on n-GaN for application in vertical GaN power switches: thermal ALD (ThALD), plasma-enhanced ALD (PEALD), and their stacked combinati…
View article: Depositing ALD-oxides on MLD-metalcones: enhancing initial growth through O<sub>2</sub> plasma densification
Depositing ALD-oxides on MLD-metalcones: enhancing initial growth through O<sub>2</sub> plasma densification Open
The world of flexible devices has brought the interest to combine ALD and MLD films. However, direct ALD on MLD can suffer from stability/growth issues. Utilising O 2 plasma, their compatibility can be enhanced, providing a more effective …
View article: Effects of post metallization annealing on Al<sub>2</sub>O<sub>3</sub> atomic layer deposition on n-GaN
Effects of post metallization annealing on Al<sub>2</sub>O<sub>3</sub> atomic layer deposition on n-GaN Open
The chemical, physical and electrical properties and the robustness of post metallization annealed Al 2 O 3 atomic layers deposited on n -type GaN are investigated in this work. Planar metal insulator capacitors are used to demonstrate a g…
View article: Titanium Carboxylate Molecular Layer Deposited Hybrid Films As Protective Coatings for Lithium-Ion Batteries
Titanium Carboxylate Molecular Layer Deposited Hybrid Films As Protective Coatings for Lithium-Ion Batteries Open
Thirty years after the release of the first commercial lithium-ion battery, capacity fading due to complex ageing mechanisms remains one of the major concerns in lithium-ion battery research. Lithium-ion battery cathodes age due to phenome…
View article: An IR Spectroscopy Study of the Degradation of Surface Bound Azido-Groups in High Vacuum
An IR Spectroscopy Study of the Degradation of Surface Bound Azido-Groups in High Vacuum Open
Controlled surface functionalization with azides to perform on surface "click chemistry" is desired for a large range of fields such as material engineering and biosensors. In this work, the stability of an azido-containing self-assembled …
View article: Molecular Layer Deposition of “Magnesicone”, a Magnesium-based Hybrid Material
Molecular Layer Deposition of “Magnesicone”, a Magnesium-based Hybrid Material Open
Molecular layer deposition (MLD) offers the deposition of ultrathin and conformal organic or hybrid films which have a wide range of applications. However, some critical potential applications require a very specific set of properties. For…
View article: Biocompatible ALD coatings as a protective barrier for copper
Biocompatible ALD coatings as a protective barrier for copper Open