Sofie Yngman
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View article: Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces Open
Due to its high hole-mobility, GaSb is a highly promising candidate for high-speed p-channels in electronic devices. However, GaSb exhibits a comparably thick native oxide causing detrimental interface defects, which has been proven diffic…
View article: Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved <i>in Situ</i> Studies
Atomic Layer Deposition of Hafnium Oxide on InAs: Insight from Time-Resolved <i>in Situ</i> Studies Open
III-V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of interests in recent years as potential next-generation metal-oxide-semiconductor field-effect transistors, with increased speed and reduced po…
View article: GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy
GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopy Open
GaN nanowires are potential candidates for use in scanning probe microscopy due to their well-defined, reproducible, geometric shapes, their hardness, and their light guiding properties. We have developed and investigated probes for high r…
View article: Semiconductor Nanowires: Characterization and surface modification
Semiconductor Nanowires: Characterization and surface modification Open
The topic of III-V nanowires is still, after more than two decades, a growing and lively research area. The areas of application are wide and contain such important topics as energy harvesting, cheap and efficient lighting, high efficiency…
View article: Surface smoothing and native oxide suppression on Zn doped aerotaxy GaAs nanowires
Surface smoothing and native oxide suppression on Zn doped aerotaxy GaAs nanowires Open
Aerotaxy, a recently invented aerosol-based growth method for nanostructures, has been shown to hold great promise in making III-V nanowires more accessible for cheap mass-production. Aerotaxy nanowire surface structure and chemistry, howe…
View article: InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition Open
Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passi…
View article: In situ observation of synthesized nanoparticles in ultra-dilute aerosols via X-ray scattering
In situ observation of synthesized nanoparticles in ultra-dilute aerosols via X-ray scattering Open
In-air epitaxy of nanostructures (Aerotaxy) has recently emerged as a viable route for fast, large-scale production. In this study, we use small-angle X-ray scattering to perform direct in-flight characterizations of the first step of this…
View article: Erratum to: In situ observation of synthesized nanoparticles in ultra-dilute aerosols via X-ray scattering
Erratum to: In situ observation of synthesized nanoparticles in ultra-dilute aerosols via X-ray scattering Open
The article In situ observation of synthesized nanoparticles in ultradilute aerosols via X-ray scattering, written by Sarah R. McKibbin, Sofie Yngman, Olivier Balmes, Bengt O. Meuller, Simon Tågerud, Maria E. Messing, Giuseppe Portale, Mic…
View article: Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide
Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide Open
Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first d…