Soham Lodh
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View article: Effect of atomic layer deposited ultra‐thin SiO <sub>2</sub> layer on vapour‐liquid‐solid (VLS) grown high dielectric TiO <sub>2</sub> film for Si‐based MOS device applications
Effect of atomic layer deposited ultra‐thin SiO <sub>2</sub> layer on vapour‐liquid‐solid (VLS) grown high dielectric TiO <sub>2</sub> film for Si‐based MOS device applications Open
Titanium dioxide (TiO 2 ) ultra‐thin films (≈13 nm) are grown on p‐type Si substrate with and without atomic layer deposited SiO 2 (5 nm) passivation layer by employing vapour‐liquid‐solid technique. Scanning electron microscope images re…