Shiyang Ji
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View article: Saccharomyces cerevisiae TAD1 Mutant Strain As Potential New Antimicrobial Agent: Studies on Its Antibacterial Activity and Mechanism of Action
Saccharomyces cerevisiae TAD1 Mutant Strain As Potential New Antimicrobial Agent: Studies on Its Antibacterial Activity and Mechanism of Action Open
Human infections caused by pathogenic bacteria remain a major global health concern. Among them, Staphylococcus aureus, Escherichia coli, Klebsiella pneumoniae, and Salmonella typhi are particularly prevalent and associated with significan…
View article: Regulatory Mechanisms of Total Soluble Solids in Tomato: From QTL Mapping to Gene Editing
Regulatory Mechanisms of Total Soluble Solids in Tomato: From QTL Mapping to Gene Editing Open
Total Soluble Solids (TSS) in tomatoes is a core indicator for evaluating fruit quality and processing characteristics. Its composition mainly consists of soluble sugars (such as fructose and glucose) and organic acids (such as citric acid…
View article: A Universal Deep Learning Force Field for Molecular Dynamic Simulation and Vibrational Spectra Prediction
A Universal Deep Learning Force Field for Molecular Dynamic Simulation and Vibrational Spectra Prediction Open
Accurate and efficient simulation of infrared (IR) and Raman spectra is essential for molecular identification and structural analysis. Traditional quantum chemistry methods based on the harmonic approximation neglect anharmonicity and nuc…
View article: Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers
Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers Open
The correlation between variable-range hopping conduction and key material parameters is investigated, including the Al concentration ( C Al ), the full width at half maximum (FWHM) of the X-ray diffraction peak, and the lattice strain in …
View article: MALM: A Multi-Information Adapter for Large Language Models to Mitigate Hallucination
MALM: A Multi-Information Adapter for Large Language Models to Mitigate Hallucination Open
Large language models (LLMs) are prone to three types of hallucination: Input-Conflicting, Context-Conflicting and Fact-Conflicting hallucinations. The purpose of this study is to mitigate the different types of hallucination by exploiting…
View article: A special machine for solving NP-complete problems
A special machine for solving NP-complete problems Open
A specialized computer named as the Electronic Probe Computer (EPC) has been developed to address large-scale NP-complete problems. The EPC employs a hybrid serial/parallel computational model, structured around four main subsystems: a con…
View article: Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition
Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition Open
The temperature-dependent Hall mobilities ( μ Hall ( T )) of heavily Al-doped 4H-SiC, fabricated using chemical vapor deposition with Al concentrations ( C Al ) exceeding 10 19 cm −3 , are analyzed to develop p + -type substrates suitable …
View article: Planar-Twisted Molecular Engineering for Modulating the Fluorescence Brightness of NIR-II Fluorophores with a Donor–Acceptor–Donor Skeleton
Planar-Twisted Molecular Engineering for Modulating the Fluorescence Brightness of NIR-II Fluorophores with a Donor–Acceptor–Donor Skeleton Open
Organic molecular fluorophores have been extensively utilized for biological imaging in the visible and the first near-infrared windows. However, their applications in the second near-infrared (NIR-II) window remain constrained, primarily …
View article: Characterization of Low-Temperature Sensitivity and Chlorophyll Fluorescence in Yellow Leaf Mutants of Tomato
Characterization of Low-Temperature Sensitivity and Chlorophyll Fluorescence in Yellow Leaf Mutants of Tomato Open
Leaf color mutants serve as valuable models for studying the regulation of plant photosynthesis, alternations in chloroplast structure and function, and the analysis of associated gene functions. A yellow leaf mutant, ylm, was separated fr…
View article: Effect of the column design and fabrication method on the reverse recovery characteristics of 1.2 kV SiC-superjunction-MOSFETs
Effect of the column design and fabrication method on the reverse recovery characteristics of 1.2 kV SiC-superjunction-MOSFETs Open
We investigated the effects of the column length and fabrication method of the superjunction (SJ) structure on the reverse recovery characteristics of 1.2 kV silicon carbide (SiC) SJ metal–oxide–semiconductor field-effect transistors (MOSF…
View article: Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition
Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition Open
The temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport (PVT) with Al concentrations ( C Al ) higher than 10 19 cm −3 is investigated to obtain high-growth-rate and low-cost p + -type sub…
View article: Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC
Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC Open
At low temperatures, the Hall coefficients in heavily Al-doped 4H-SiC are reported to be negative in the band conduction region as well as in the hopping conduction regions (i.e., nearest-neighbor hopping conduction region and variable-ran…
View article: Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC
Simple physical model for the sign of the Hall coefficient in variable-range hopping conduction in heavily Al-doped p-type 4H-SiC Open
We observe negative Hall coefficients ( R H ( T )) in the variable-range hopping (VRH) conduction region for heavily Al-doped p-type 4H-SiC. We have proposed a simple physical model in which the difference between the density of hopping si…
View article: ISPSD 2020 Awards [3 awards]
ISPSD 2020 Awards [3 awards] Open
A super-junction (SJ) device has been developed to improve the trade-off relationship between the breakdown voltage (V BD ) and specific on-resistance (R on A).A multi-epitaxial growth method had been used for fundamental demonstrations, b…
View article: Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC
Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC Open
We have observed negative Hall coefficients [ R H ( T )] in a nearest-neighbor hopping (NNH) conduction region in epilayers of heavily Al-doped or Al–N co-doped p-type 4H-SiC grown on n-type 4H-SiC substrates by CVD or in wafers of heavily…
View article: Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers
Transition of conduction mechanism from band to variable-range hopping conduction due to Al doping in heavily Al-doped 4H-SiC epilayers Open
We investigate the transition of the conduction mechanism from band and nearest-neighbor hopping (NNH) conduction to variable-range hopping (VRH) conduction in heavily Al-doped 4H-SiC epilayers with increasing Al concentration ( C Al ). In…
View article: Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration
Dependence of conduction mechanisms in heavily Al-doped 4H-SiC epilayers on Al concentration Open
To reduce the resistivity of heavily Al-doped 4H-SiC epilayers, the conduction mechanisms were investigated for Al concentrations (CAl) between 2.4 × 1019 and 4.7 × 1020 cm−3 and measurement temperatures (T) between 20 and 600 K. The resul…