Sophie L. Pain
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View article: Extracting surface and bulk recombination parameters for passivated silicon using photoexcited muon spin spectroscopy
Extracting surface and bulk recombination parameters for passivated silicon using photoexcited muon spin spectroscopy Open
Photoexcited muon spin spectroscopy (photo-μSR) enables depth-resolved measurement of charge carrier lifetimes in semiconductors. In this work, we evaluate the sensitivity of photo-μSR to surface recombination by studying silicon wafers wi…
View article: Impact of Co-Reactants in Atomic Layer Deposition of High-κ Dielectrics on Monolayer Molybdenum Disulfide
Impact of Co-Reactants in Atomic Layer Deposition of High-κ Dielectrics on Monolayer Molybdenum Disulfide Open
The integration of single-layer transition metal dichalcogenides (TMDCs) in nanoscale field-effect transistor devices requires the deposition of a high dielectric constant (high-κ) material to act as the gate dielectric. Traditional therma…
View article: Effective-lifetime and reflectance measurements on a high-purity silicon wafer with surfaces passivated by aluminum-oxide layers
Effective-lifetime and reflectance measurements on a high-purity silicon wafer with surfaces passivated by aluminum-oxide layers Open
Effective-lifetime and reflectance measurements were done on a 725-μm-thick n-type silicon (Si) wafer with a resistivity in the range of 500 to 1200 Ω cm. A 25-nm aluminum-oxide layer was deposited onto each of the Si-wafer surface to redu…
View article: Direct thermal atomic layer deposition of high-<i>κ</i> dielectrics on monolayer MoS<sub>2</sub>: nucleation and growth
Direct thermal atomic layer deposition of high-<i>κ</i> dielectrics on monolayer MoS<sub>2</sub>: nucleation and growth Open
Investigation of the nucleation and growth of Al 2 O 3 and HfO 2 films grown directly on chemical vapour-synthesised monolayer MoS 2 via atomic layer deposition.
View article: Electrically Tunable Si-Based THz Photomodulator Using Dielectric/Polymer Surface Gating
Electrically Tunable Si-Based THz Photomodulator Using Dielectric/Polymer Surface Gating Open
Silicon-based terahertz (THz) photomodulators suffer from a modulation speed limited by the lifetime of the charge carriers photoexcited in the silicon. We report a silicon-based THz photomodulator scheme offering real-time reconfiguration…
View article: Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection
Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection Open
Hafnium oxide (HfO x ) films grown by atomic layer deposition (ALD) have recently been demonstrated to provide high‐quality silicon surface passivation. Reports have suggested that changing the composition of the hafnium‐containing precurs…
View article: Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon
Formation and annihilation of bulk recombination-active defects induced by muon irradiation of crystalline silicon Open
Muons are part of natural cosmic radiation but can also be generated at spallation sources for material science and particle physics applications. Recently, pulsed muons have been used to characterize the density of free charge carriers in…
View article: Tunable Photoluminescence from Monolayer Molybdenum Disulfide
Tunable Photoluminescence from Monolayer Molybdenum Disulfide Open
Monolayer molybdenum disulfide (1L MoS 2 ), a promising optoelectronic material, emits strong visible photoluminescence (PL). Systematic control of the intensity, energy, and spectral width of PL from 1L MoS 2 on silicon dioxide/silicon (S…
View article: Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition
Quantifying photoluminescence variability in monolayer molybdenum disulfide films grown by chemical vapour deposition Open
Monolayer molybdenum disulfide (MoS 2 ) is a promising candidate for inclusion in optoelectronic technologies, owing to its two-dimensional (2D) nature and resultant novel photoluminescence (PL). Chemical vapour deposition (CVD) is an impo…
View article: Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon
Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon Open
Hafnium oxide thin films have attracted considerable interest for passivation layers, protective barriers, and anti-reflection coatings. This study presents a systematic investigation into the role of film growth co-reactant on film proper…
View article: Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects
Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects Open
Understanding surface passivation arising from aluminium oxide (Al2O3) films is of significant relevance for silicon-based solar cells and devices that require negligible surface recombination. This study aims to understand the competing b…
View article: Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium‐Ion Battery Conditions
Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium‐Ion Battery Conditions Open
Understanding the solid electrolyte interphase (SEI) formation and (de)lithiation phenomena at silicon (Si) electrodes is key to improving the performance and lifetime of Si‐based lithium‐ion batteries. However, these processes remain some…
View article: Dataset for Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium-ion Battery Conditions
Dataset for Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium-ion Battery Conditions Open
This dataset provides the raw data to the manuscript "Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium-ion Battery Conditions" published in Small (https://doi.org/10.1002/smll.202303442) …
View article: Dataset for Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium-ion Battery Conditions
Dataset for Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium-ion Battery Conditions Open
This dataset provides the raw data to the manuscript "Interfacial Chemistry Effects in the Electrochemical Performance of Silicon Electrodes under Lithium-ion Battery Conditions" published in Small (https://doi.org/10.1002/smll.202303442) …
View article: Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales
Terahertz photoconductance dynamics of semiconductors from sub-nanosecond to millisecond timescales Open
Optical pump terahertz probe spectroscopy (OPTP) is a versatile non-contact technique that measures transient photoconductance decays with femtosecond temporal resolution. However, its maximum temporal range is limited to only a few nanose…
View article: Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon
Stable chemical enhancement of passivating nanolayer structures grown by atomic layer deposition on silicon Open
Production of a temporally stable chemically enhanced ultra-thin HfO 2 interlayer with excellent passivation for use in photovoltaic passivating contacts.
View article: Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films
Mechanisms of Silicon Surface Passivation by Negatively Charged Hafnium Oxide Thin Films Open
We have studied the mechanisms underpinning effective surface passivation of silicon with hafnium oxide (HfO 2 ) thin films grown via atomic layer deposition (ALD). Plasma-enhanced ALD with O 2 plasma and a tetrakis(dimethylamido)hafnium p…
View article: Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics
Electronic Characteristics of Ultra‐Thin Passivation Layers for Silicon Photovoltaics Open
Surface passivating thin films are crucial for limiting the electrical losses during charge carrier collection in silicon photovoltaic devices. Certain dielectric coatings of more than 10 nm provide excellent surface passivation, and ultra…
View article: Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy
Carrier lifetimes in high-lifetime silicon wafers and solar cells measured by photoexcited muon spin spectroscopy Open
Photoexcited muon spin spectroscopy (photo-μSR) is used to study excess charge carrier lifetimes in silicon. Experiments are performed on silicon wafers with very high bulk lifetimes with the surface passivation conditions intentionally mo…
View article: Enhanced Surface Passivation of Subnanometer Silicon Dioxide Films by Superacidic Treatments
Enhanced Surface Passivation of Subnanometer Silicon Dioxide Films by Superacidic Treatments Open
Subnanometer-scale silicon dioxide (SiO2) films are frequently present before, during, and after silicon device processing, yet they offer minimal surface passivation and can detrimentally impact subsequent processing steps. Here we develo…
View article: Room Temperature Enhancement of Electronic Materials by Superacid Analogues
Room Temperature Enhancement of Electronic Materials by Superacid Analogues Open
Treatment with the superacid bis(trifluoromethanesulfonyl)amide (sometimes known as TFSA, TFSI, or HNTf2) enhances the properties of a wide range of optoelectronic materials, resulting in longer effective carrier lifetimes and higher photo…
View article: Sub-2 cm/s passivation of silicon surfaces by aprotic solutions
Sub-2 cm/s passivation of silicon surfaces by aprotic solutions Open
Minimizing recombination at semiconductor surfaces is required for the accurate determination of the bulk carrier lifetime. Proton donors, such as hydrofluoric acid and superacids, are well known to provide highly effective short-term surf…
View article: Comparison of Accelerated UV Test Methods with Florida Exposure for Photovoltaic Backsheet Materials
Comparison of Accelerated UV Test Methods with Florida Exposure for Photovoltaic Backsheet Materials Open
Photovoltaic (PV) modules currently have lifetime guarantees of 25 years or more. Ideally, all components of the modules would be tested in field conditions for at least 25 years, however this is impractical, so accelerated, laboratory-bas…