Explanipedia

Low-loss phase modulation using a MoS2 monolayer integrated on silicon waveguides Open

Cheng-Han Wu, Tom Reep, Yishu Huang, Steven Brems, Christian Haffner , et al. · 2025

Two dimensional (2D) materials are at the forefront of research in integrated modulators. However, achieving pure phase modulation with low insertion loss remains challenging in 2D material modulators. This work explores phase modulators b…

Toward characterization and assessment of MoS2 fundamental device properties by photoluminescence Open

Thomas Nuytten, Albert Minj, Stefanie Sergeant, Quentin Smets, Steven Brems , et al. · 2025

Transfer of Substitutionally Implanted Graphene Open

Zviadi Zarkua, Ahmed Samir Lotfy, Zeno Maesen, Aleksandr Seliverstov, Chen He , et al. · 2025

Although ultralow energy (ULE) ion implantation is an effective method for substitutional doping of graphene with transition metals, it generally results in substantial nonsubstitutional incorporation, such as atoms intercalated between th…

Graphene absorber on an SOI chip for active and passive mode locking of lasers Open

Tom Reep, Cheng-Han Wu, Didit Yudistira, Steven Brems, Inge Asselberghs , et al. · 2025

Achieving High Substitutional Incorporation in Mn-Doped Graphene Open

Renán Villarreal, Zviadi Zarkua, Silvan Kretschmer, Vince Hendriks, J.E.J. Hillen , et al. · 2024

Despite its broad potential applications, substitution of carbon by transition metal atoms in graphene has so far been explored only to a limited extent. We report the realization of substitutional Mn doping of graphene to a record high at…

Graphene-Based Silicon Photonic Electro-Absorption Modulators and Phase Modulators Open

Cheng-Han Wu, Tom Reep, Steven Brems, Didit Yudistira, Joris Van Campenhout , et al. · 2024

Since their first demonstration, graphene-based silicon waveguide modulators have evolved towards very attractive devices for adoption in future optical interconnects. In this paper, we first review state-of-the-art for graphene-based inte…

Oriented Two-dimensional Semiconducting Crystals on Amorphous Dielectrics by Selective Artificial Epitaxy Open

Benjamin Groven, Iryna Kandybka, V. V. VORONENKOV, Dries Vranckx, Henry Medina , et al. · 2024

Defective grain boundaries form in semiconductors when deposition approaches do not control crystal grain orientation. This poses existential limitations to fabricating highly performing semiconductor devices with two-dimensional semicondu…

Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer Open

Pieter‐Jan Wyndaele, Jean‐François de Marneffe, Stefanie Sergeant, César Javier Lockhart de la Rosa, Steven Brems , et al. · 2024

Optimized Die Preparation and Handling for High Yield Hybrid Die to Wafer Bonding Open

Pieter Bex, Alain Phommahaxay, Koen Kennes, Samuel Suhard, Steven Brems , et al. · 2024

Hybrid Cu/dielectric bonding is a well-established technology for Wafer-To-Wafer (W2W) bonding, but it is challenging to apply this technology to Die-To-Wafer (D2W) bonding. Very small particles on the die or wafer can lead to voids/non-bo…

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors Open

Yu. Yu. Illarionov, Alexander Karl, Quentin Smets, B. Kaczer, Theresia Knobloch , et al. · 2024

Recent advances in fabricating field-effect transistors with MoS 2 and other related two-dimensional (2D) semiconductors have inspired the industry to begin with the integration of these emerging technologies into FAB-compatible process fl…

Demonstration of Graphene Waveguide Photodetector Based on Photothermoelectric Effect Open

Yishu Huang, Tom Reep, Hung‐Chieh Tsai, Jeroen De Coster, Steven Brems , et al. · 2024

We demonstrate a graphene waveguide photodetector featuring a responsivity of ~1.2 V/W. The photovoltage map measured under zero bias confirms that photothermoelectric effect is dominating.

Toward Characterization and Assessment of Mos2 Fundamental Device Properties by Photoluminescence Open

Thomas Nuytten, Albert Minj, Stefanie Sergeant, Quentin Smets, Steven Brems , et al. · 2024

Magnetic clusters as efficient EY-like spin-scattering centres in graphene Open

Wout Keijers, Ramasamy Murugesan, Guillaume Libeert, Bart Raes, Steven Brems , et al. · 2024

Exploring the ability of atomically precise magnetic Ni 4 scatterers to augment graphene's spin activity.

Active and passive mode-locking of a laser using a graphene modulator on an SOI chip Open

Tom Reep, Cheng-Han Wu, Steven Brems, Didit Yudistira, Joris Van Campenhout , et al. · 2023

This study experimentally demonstrates the ability of an integrated graphene modulator on a silicon-on-insulator chip to both passively and actively mode-lock a fibre laser. Passive mode-locking is demonstrated at a repetition rate of 28 M…

High-efficiency dual single layer graphene modulator integrated on slot waveguides Open

Cheng-Han Wu, Tom Reep, Steven Brems, Julien Jussot, Vivek Mootheri , et al. · 2023

This paper presents an experimental and theoretical investigation of a graphene-integrated electro-absorption modulator (EAM) based on a slot waveguide. Due to the enhanced light-matter interaction of graphene, the device exhibits an impre…

Conductivity Enhancement in Transition Metal Dichalcogenides: A Complex Water Intercalation and Desorption Mechanism Open

Jill Serron, Albert Minj, Valentina Spampinato, Alexis Franquet, Yevhenii Rybalchenko , et al. · 2023

The complexity of the water adsorption-desorption mechanism at the interface of transition metal dichalcogenides (TMDs) and its impact on their current transport are not yet fully understood. Here, our work investigates the swift intercala…

Wafer‐Scale Integration of Single Layer Graphene Electro‐Absorption Modulators in a 300 mm CMOS Pilot Line Open

Cheng-Han Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin , et al. · 2023

Graphene‐based devices have shown great promise for several applications. For graphene devices to be used in real‐world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a pa…

Wafer-scale Graphene Electro-absorption Modulators Fabricated in a 300mm CMOS Platform Open

Cheng-Han Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin , et al. · 2023

Graphene-based devices have shown great promise for several applications. For graphene devices to be used in real-world systems, it is necessary to demonstrate competitive device performance, repeatability of results, reliability, and a pa…

Enabling high quality dielectric passivation on Monolayer WS2 using a sacrificial Graphene Oxide template Open

Pieter‐Jan Wyndaele, Jean‐François de Marneffe, Stefanie Sergeant, C. Lockhart de la Rosa, Steven Brems , et al. · 2023

Two-dimensional transition metal dichalcogenides (2D TMDC’s) hold a wide variety of applications, among which microelectronic devices. However, various challenges hinder their integration e.g., good dielectric deposition on the 2D TMDC sur…

Bond defects in graphene created by ultralow energy ion implantation Open

Renán Villarreal, Pin-Cheng Lin, Zviadi Zarkua, Harsh Bana, Hung‐Chieh Tsai , et al. · 2022

Saturable absorption of a double layer graphene modulator on a slot waveguide Open

Tom Reep, Cheng-Han Wu, Zheng Wang, Steven Brems, Stéphane Clemmen , et al. · 2022

The saturable absorption of a double-layer graphene modulator is experimentally demonstrated on a silicon slot waveguide platform. Saturation was found to start at ~0.8W with a maximum saturation depth of 1.9 dB for a 50μm

Thermal Annealing of Graphene Implanted with Mn at Ultralow Energies: From Disordered and Contaminated to Nearly Pristine Graphene Open

Pin-Cheng Lin, Renán Villarreal, Harsh Bana, Zviadi Zarkua, Vince Hendriks , et al. · 2022

sponsorship: This work was funded by KU Leuven and FWO Vlaanderen. The authors acknowledge Elettra Sincrotrone Trieste for providing access to its synchrotron radiation facilities and, in particular, to the BaDElPh and SuperESCA beamlines.…

Correction to Doping Graphene with Substitutional Mn Open

Pin-Cheng Lin, Renán Villarreal, Simona Achilli, Harsh Bana, Maya Narayanan Nair , et al. · 2022

ADVERTISEMENT RETURN TO ISSUEPREVAdditions and Correc...Additions and CorrectionsNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Doping Graphene with Substitutional MnPin-Cheng LinPin-Cheng LinMore by Pin-Cheng Linhttps://orci…

Growth Dynamics of Epitaxial Interfacial Carbon Layers at the Epitaxial Al2o3(0001)/Cu(111) Interface for Scalable High-Quality Graphene Transfer Applications Open

Hung‐Chieh Tsai, Brecht Marien, François Chancerel, Stefan De Gendt, Steven Brems · 2022

Au3-Decorated graphene as a sensing platform for O2 adsorption and desorption kinetics Open

Guillaume Libeert, Ramasamy Murugesan, Márton Guba, Wout Keijers, Simon Collienne , et al. · 2022

A new approach to sensitively measure the sorption kinetics of molecules on few-atom clusters, by making use of a graphene sensor, is proposed. The approach is illustrated for the reaction of O 2 with Au 3 clusters.

Bond Defects in Graphene Created by Ultralow Energy Ion Implantation Open

Renán Villarreal, Pin-Cheng Lin, Zviadi Zarkua, Harsh Bana, Hung‐Chieh Tsai , et al. · 2022

Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111) Open

Adrian Hemmi, Huanyao Cun, Steven Brems, Cedric Huyghebaert, Thomas Greber · 2021

Single layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapour deposition at process temperatures between 1000 and 1300 K is in-situ investigated by photoelectron yield measurements. The…

Tuning the spintronic properties of graphene with atomically precise Au clusters Open

Wout Keijers, Ramasamy Murugesan, Guillaume Libeert, Jeroen E. Scheerder, Bart Raes , et al. · 2021

sponsorship: This research has been supported by the Research Foundation-Flanders (FWO project G.0D56.19N) and by the KU Leuven Internal Research Fund C14/17/080. (Research Foundation-Flanders (FWO)|G.0D56.19N, KU Leuven|C14/17/080)

Breakdown of Universal Scaling for Nanometer-Sized Bubbles in Graphene Open

Renán Villarreal, Pin-Cheng Lin, Fahim Faraji, Nasim Hassani, Harsh Bana , et al. · 2021

We report the formation of nanobubbles on graphene with a radius of the order of 1 nm, using ultralow energy implantation of noble gas ions (He, Ne, Ar) into graphene grown on a Pt(111) surface. We show that the universal scaling of the as…

Wafer-scale, epitaxial growth of single layer hexagonal boron nitride on Pt(111) Open

Adrian Hemmi, Huanyao Cun, Steven Brems, Cedric Huyghebaert, Thomas Greber · 2021

Single-layer hexagonal boron nitride is produced on 2 inch Pt(111)/sapphire wafers. The growth with borazine vapor deposition at process temperatures between 1000 and 1300 K is in situ investigated by photoelectron yield measurements. The …

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