Steven R. Schofield
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View article: Future of condensed matter physics for the next 10 years<sup>*</sup>
Future of condensed matter physics for the next 10 years<sup>*</sup> Open
This perspective outlines a selection of research directions that members of the JPCM editorial board anticipate may shape the frontier of condensed matter physics over the next decade. Rather than a comprehensive review or formal roadmap,…
View article: Imaging the Acceptor Wave Function Anisotropy in Silicon
Imaging the Acceptor Wave Function Anisotropy in Silicon Open
We present the first scanning tunneling microscopy (STM) image of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square-ring-like features in STM images and originate from near-surface defects introduced by …
View article: Current and future temperature suitability for autochthonous transmission of malaria in Canada
Current and future temperature suitability for autochthonous transmission of malaria in Canada Open
Background Malaria continues to be one of the most significant infectious diseases in terms of morbidity and mortality. In many parts of North America, including parts of southern Canada, competent malaria vectors Anopheles quadrimaculatus…
View article: Roadmap on atomically-engineered quantum platforms
Roadmap on atomically-engineered quantum platforms Open
Matter at the atomic-scale is inherently governed by the laws of quantum mechanics. This makes charges and spins confined to individual atoms—and interactions among them—an invaluable resource for fundamental research and quantum technolog…
View article: Quality of life measurement tools for heavy menstrual bleeding: A systematic review and critical appraisal
Quality of life measurement tools for heavy menstrual bleeding: A systematic review and critical appraisal Open
None of the available QoL tools for HMB are appropriate for use in practice. There is a need to invest in developing and validating reliable tools that offer high quality qualitative and quantitative assessment.
View article: Roadmap on atomic-scale semiconductor devices
Roadmap on atomic-scale semiconductor devices Open
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of…
View article: Roadmap on Atomic-scale Semiconductor Devices
Roadmap on Atomic-scale Semiconductor Devices Open
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of…
View article: Element-specific, non-destructive profiling of layered heterostructures
Element-specific, non-destructive profiling of layered heterostructures Open
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostruc…
View article: Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication
Single‐Atom Control of Arsenic Incorporation in Silicon for High‐Yield Artificial Lattice Fabrication Open
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom‐engineered lattices are anticipate…
View article: EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning
EUV-induced hydrogen desorption as a step towards large-scale silicon quantum device patterning Open
View article: Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication Open
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipate…
View article: EUV-Induced Hydrogen Desorption As A Step Towards Large-Scale Silicon Quantum Device Patterning
EUV-Induced Hydrogen Desorption As A Step Towards Large-Scale Silicon Quantum Device Patterning Open
Dataset: STM, XPS and PEEM raw data, processed data and the codes used for data fitting our published work are all available here. Abstract: Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has …
View article: EUV-Induced Hydrogen Desorption As A Step Towards Large-Scale Silicon Quantum Device Patterning
EUV-Induced Hydrogen Desorption As A Step Towards Large-Scale Silicon Quantum Device Patterning Open
Dataset: STM, XPS and PEEM raw data, processed data and the codes used for data fitting our published work are all available here. Abstract: Atomically precise hydrogen desorption lithography using scanning tunnelling microscopy (STM) has …
View article: Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001)
Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001) Open
We investigate the adsorption and thermal decomposition of triphenyl bismuth (TPB) on the silicon (001) surface using atomic-resolution scanning tunneling microscopy, synchrotron-based X-ray photoelectron spectroscopy, and density function…
View article: Momentum space imaging of ultra-thin electron liquids in δ-doped silicon
Momentum space imaging of ultra-thin electron liquids in δ-doped silicon Open
Dataset: SX-ARPES raw data, processed data and the codes used for analysing and data fitting our work at doi/10.1002/advs.202302101 are all available here. The theoretical mdelling is also avaiable. Abstract:
View article: Momentum space imaging of ultra-thin electron liquids in δ-doped silicon
Momentum space imaging of ultra-thin electron liquids in δ-doped silicon Open
Dataset: SX-ARPES raw data, processed data and the codes used for analysing and data fitting our work at doi/10.1002/advs.202302101 are all available here. The theoretical mdelling is also avaiable. Abstract:
View article: Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon
Momentum‐Space Imaging of Ultra‐Thin Electron Liquids in δ‐Doped Silicon Open
Two‐dimensional dopant layers (δ‐layers) in semiconductors provide the high‐mobility electron liquids (2DELs) needed for nanoscale quantum‐electronic devices. Key parameters such as carrier densities, effective masses, and confinement thic…
View article: Resistless EUV lithography: Photon-induced oxide patterning on silicon
Resistless EUV lithography: Photon-induced oxide patterning on silicon Open
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated silicon (100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due t…
View article: Bismuth trichloride as a molecular precursor for silicon doping
Bismuth trichloride as a molecular precursor for silicon doping Open
Dopant impurity species can be incorporated into the silicon (001) surface via the adsorption and dissociation of simple precursor molecules. Examples include phosphine (PH3), arsine (AsH3), and diborane (B2H6) for the incorporation of pho…
View article: Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon
Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon Open
The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As. …
View article: Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface** Open
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic‐scale devices using donor atoms as q…
View article: Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface**
Room Temperature Incorporation of Arsenic Atoms into the Germanium (001) Surface** Open
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic‐scale devices using donor atoms as q…
View article: Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Non-destructive X-ray imaging of patterned delta-layer devices in silicon Open
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorou…
View article: Room temperature donor incorporation for quantum devices: arsine on\n germanium
Room temperature donor incorporation for quantum devices: arsine on\n germanium Open
Germanium has emerged as an exceptionally promising material for spintronics\nand quantum information applications, with significant fundamental advantages\nover silicon. However, efforts to create atomic-scale devices using donor atoms\na…
View article: Room temperature donor incorporation for quantum devices: arsine on germanium
Room temperature donor incorporation for quantum devices: arsine on germanium Open
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as q…
View article: Substitutional Tin Acceptor States in Black Phosphorus
Substitutional Tin Acceptor States in Black Phosphorus Open
Nominally pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunneling microscopy (STM) images of black phosp…
View article: Charge Density Waves in Electron-Doped Molybdenum Disulfide
Charge Density Waves in Electron-Doped Molybdenum Disulfide Open
We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS2). This is the first observation of a CDW in any d2 (column 6) transition metal dichalcog…
View article: The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale
The formation of a Sn monolayer on Ge(1 0 0) studied at the atomic scale Open
View article: Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction.
Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction. Open
Supporting data for "Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction." by Laborda Lalaguna, Paula; Hedgeland, Holly; Ryan, Paul; Warschkow, Oliver; Muntwiler, Matthias; Teplyakov, …
View article: Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction
Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction Open
The adsorption configurations of a technologically relevant model organic adsorbate on the silicon (001) surface were studied using energy scanned x-ray photoelectron diffraction (PhD). Previous work has established the existence of an int…