Sungpyo Baek
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View article: Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System Open
Most physical reservoir computing (RC) systems require complex preprocessing steps such as binarization under noise‐free conditions and challenging real‐time data processing because of latency and increase system complexity. This paper pro…
View article: Bifacially Engineered Perovskite‐Based Synaptic Memristors Achieve High Linearity and Symmetricity for Accurate and Robust Neuromorphic Computing
Bifacially Engineered Perovskite‐Based Synaptic Memristors Achieve High Linearity and Symmetricity for Accurate and Robust Neuromorphic Computing Open
Achieving both high linearity and symmetricity in metal halide perovskite (MHP)‐based memristors remains challenging, primarily due to their abrupt switching behaviors and irregular conductive filament (CF) pathways. Here, bifacially engin…
View article: Steep‐Slope CuInP <sub>2</sub> S <sub>6</sub> Ferroionic Threshold Switching Field‐Effect Transistor for Implementation of Artificial Spiking Neuron
Steep‐Slope CuInP <sub>2</sub> S <sub>6</sub> Ferroionic Threshold Switching Field‐Effect Transistor for Implementation of Artificial Spiking Neuron Open
Spiking neural networks (SNNs) have garnered considerable attention as energy‐efficient and biologically inspired computing paradigms. However, despite the growing interest, the development of hardware‐based SNNs has remained limited, prim…
View article: Back cover image
Back cover image Open
A dual‐logic‐in‐memory device is demonstrated through a single bidirectional polarization‐integrated 2D ferroelectric field‐effect transistor. image
View article: Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure
Dual‐logic‐in‐memory implementation with orthogonal polarization of van der Waals ferroelectric heterostructure Open
The rapid advancement of AI‐enabled applications has resulted in an increasing need for energy‐efficient computing hardware. Logic‐in‐memory is a promising approach for processing the data stored in memory, wherein fast and efficient compu…
View article: Electronic and electrocatalytic applications based on <scp>solution‐processed two‐dimensional platinum diselenide</scp> with <scp>thickness‐dependent</scp> electronic properties
Electronic and electrocatalytic applications based on <span>solution‐processed two‐dimensional platinum diselenide</span> with <span>thickness‐dependent</span> electronic properties Open
Platinum diselenide (PtSe 2 ) has shown great potential as a candidate two‐dimensional (2D) material for broadband photodetectors and electrocatalysts because of its unique properties compared to conventional 2D transition metal dichalcoge…
View article: <scp>SnS</scp>/<scp>MoS<sub>2</sub></scp> van der Waals heterojunction for <scp>in‐plane</scp> ferroelectric <scp>field‐effect</scp> transistors with multibit memory and logic characteristics
<span>SnS</span>/<span>MoS<sub>2</sub></span> van der Waals heterojunction for <span>in‐plane</span> ferroelectric <span>field‐effect</span> transistors with multibit memory and logic characteristics Open
Ferroelectric two dimensional (2D) materials hold great potential to develop modern miniaturized electronic and memory devices. 2D ferroelectrics exhibiting spontaneous polarization in the out‐of‐plane direction have been extensively inves…
View article: β‐Mercaptoethanol‐Enabled Long‐Term Stability and Work Function Tuning of MXene
β‐Mercaptoethanol‐Enabled Long‐Term Stability and Work Function Tuning of MXene Open
The oxidation degradation by unsaturated metal atoms or dangling bonds at MXene edges and defects severely hinders the practical application of MXene. Herein, a passivation scheme for Ti 3 C 2 T x MXene is demonstrated by utilizing a sulfh…
View article: Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022)
Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure (Adv. Sci. 21/2022) Open
Ferroelectric Field‐Effect‐Transistors In article number 2200566, Sungjoo Lee and co‐workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP(2)S(…
View article: Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure
Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure Open
To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–m…
View article: Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance
Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance Open
Organic-inorganic or inorganic metal halide materials have emerged as a promising candidate for a resistive switching material owing to its capability to achieve low operating voltage, high on/off ratio and multi-level switching. However, …